PL3433879T3 - Sposób oddolny formowania struktur przewodowych na podłożu - Google Patents

Sposób oddolny formowania struktur przewodowych na podłożu

Info

Publication number
PL3433879T3
PL3433879T3 PL17712498T PL17712498T PL3433879T3 PL 3433879 T3 PL3433879 T3 PL 3433879T3 PL 17712498 T PL17712498 T PL 17712498T PL 17712498 T PL17712498 T PL 17712498T PL 3433879 T3 PL3433879 T3 PL 3433879T3
Authority
PL
Poland
Prior art keywords
substrate
way
form wiring
wiring structures
structures
Prior art date
Application number
PL17712498T
Other languages
English (en)
Inventor
Filip Granek
Zbigniew ROZYNEK
Original Assignee
Xtpl S.A.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xtpl S.A. filed Critical Xtpl S.A.
Publication of PL3433879T3 publication Critical patent/PL3433879T3/pl

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D13/00Electrophoretic coating characterised by the process
    • C25D13/12Electrophoretic coating characterised by the process characterised by the article coated
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0004Apparatus specially adapted for the manufacture or treatment of nanostructural devices or systems or methods for manufacturing the same
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0042Assembling discrete nanostructures into nanostructural devices
    • B82B3/0052Aligning two or more elements
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D13/00Electrophoretic coating characterised by the process
    • C25D13/22Servicing or operating apparatus or multistep processes
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1283After-treatment of the printed patterns, e.g. sintering or curing methods
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117Shapes of semiconductor bodies
    • H10D62/118Nanostructure semiconductor bodies
    • H10D62/119Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/205Nanosized electrodes, e.g. nanowire electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901Materials
    • H10P14/2922Materials being non-crystalline insulating materials, e.g. glass or polymers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3451Structure
    • H10P14/3452Microstructure
    • H10P14/3461Nanoparticles
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3451Structure
    • H10P14/3452Microstructure
    • H10P14/3462Nanowires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6508Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a liquid
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0436Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041Photolithographic processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/80Electrical treatments, e.g. for electroforming
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G02OPTICS
    • G02CSPECTACLES; SUNGLASSES OR GOGGLES INSOFAR AS THEY HAVE THE SAME FEATURES AS SPECTACLES; CONTACT LENSES
    • G02C7/00Optical parts
    • G02C7/02Lenses; Lens systems ; Methods of designing lenses
    • G02C7/04Contact lenses for the eyes
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1131Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/16Inspection; Monitoring; Aligning
    • H05K2203/163Monitoring a manufacturing process

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Ophthalmology & Optometry (AREA)
  • Optics & Photonics (AREA)
  • General Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Toxicology (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrostatic Spraying Apparatus (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Medicinal Preparation (AREA)
PL17712498T 2016-03-22 2017-03-21 Sposób oddolny formowania struktur przewodowych na podłożu PL3433879T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1604818.3A GB201604818D0 (en) 2016-03-22 2016-03-22 Method for forming structures upon a substrate
PCT/EP2017/056739 WO2017162696A1 (en) 2016-03-22 2017-03-21 Bottom-up method for forming wire structures upon a substrate
EP17712498.9A EP3433879B1 (en) 2016-03-22 2017-03-21 Bottom-up method for forming wire structures upon a substrate

Publications (1)

Publication Number Publication Date
PL3433879T3 true PL3433879T3 (pl) 2019-12-31

Family

ID=55968668

Family Applications (1)

Application Number Title Priority Date Filing Date
PL17712498T PL3433879T3 (pl) 2016-03-22 2017-03-21 Sposób oddolny formowania struktur przewodowych na podłożu

Country Status (14)

Country Link
US (1) US10731268B2 (pl)
EP (1) EP3433879B1 (pl)
JP (1) JP7012020B2 (pl)
KR (1) KR102038244B1 (pl)
CN (1) CN109478558B (pl)
AU (1) AU2017238313B2 (pl)
CA (1) CA3018117A1 (pl)
GB (1) GB201604818D0 (pl)
IL (1) IL261919B2 (pl)
MY (1) MY192442A (pl)
PL (1) PL3433879T3 (pl)
SG (1) SG11201807698SA (pl)
TW (1) TWI841521B (pl)
WO (1) WO2017162696A1 (pl)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11001687B2 (en) * 2016-08-31 2021-05-11 Konica Minolta, Inc. Substrate with functional fine line and method for forming functional fine line
GB2576293B (en) * 2018-06-06 2022-10-12 Xtpl S A Method for removing bottlenecks
GB201812691D0 (en) 2018-08-03 2018-09-19 Xtpl S A Method of forming a structure upon a substrate
CN116536745B (zh) * 2022-05-20 2025-02-07 武汉铢寸科技有限公司 在膜中制造纳米孔的方法、装置及叠加电场的生成装置
CN117444229A (zh) * 2023-10-08 2024-01-26 清华大学 摩擦增材制造方法和装置
US20250267919A1 (en) * 2024-02-19 2025-08-21 Research 42 LLC Apparatus for the precision assembly of small particles

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4281342B2 (ja) 2001-12-05 2009-06-17 セイコーエプソン株式会社 パターン形成方法および配線形成方法
AU2003290531A1 (en) * 2002-10-21 2004-05-13 Nanoink, Inc. Nanometer-scale engineered structures, methods and apparatus for fabrication thereof, and applications to mask repair, enhancement, and fabrication
JP4853607B2 (ja) 2004-07-09 2012-01-11 セイコーエプソン株式会社 薄膜トランジスタの製造方法
TWI463713B (zh) * 2006-11-09 2014-12-01 南諾西斯股份有限公司 用於奈米導線對準及沈積的方法
US7294560B1 (en) * 2006-11-28 2007-11-13 Motorola, Inc. Method of assembling one-dimensional nanostructures
US7892610B2 (en) * 2007-05-07 2011-02-22 Nanosys, Inc. Method and system for printing aligned nanowires and other electrical devices
FI122644B (fi) * 2007-06-08 2012-04-30 Teknologian Tutkimuskeskus Vtt Menetelmä sähköisesti johtavien tai puolijohtavien reittien muodostamiseksi substraatille sekä menetelmän käyttö transistorien tuottamiseen ja anturien valmistukseen
WO2009011709A1 (en) * 2007-07-19 2009-01-22 The Board Of Trustees Of The University Of Illinois High resolution electrohydrodynamic jet printing for manufacturing systems
WO2010028712A1 (en) * 2008-09-11 2010-03-18 ETH Zürich Capillarity-assisted, mask-less, nano-/micro-scale spray deposition of particle based functional 0d to 3d micro- and nanostructures on flat or curved substrates with or without added electrocapillarity effect
JP2012528020A (ja) * 2009-05-26 2012-11-12 ナノシス・インク. ナノワイヤおよび他のデバイスの電場沈着のための方法およびシステム
WO2010139386A1 (en) * 2009-06-06 2010-12-09 Merck Patent Gmbh Process for aligning nanoparticles
US8937293B2 (en) * 2009-10-01 2015-01-20 Northeastern University Nanoscale interconnects fabricated by electrical field directed assembly of nanoelements
JP5753192B2 (ja) * 2009-12-22 2015-07-22 クナノ・アーベー ナノワイヤ構造を製造する方法
US9096954B2 (en) * 2010-04-27 2015-08-04 National Institute For Materials Science Metal nanoparticle array structure, device for producing same, and method for producing same

Also Published As

Publication number Publication date
CA3018117A1 (en) 2017-09-28
JP7012020B2 (ja) 2022-01-27
CN109478558B (zh) 2020-05-05
JP2019519089A (ja) 2019-07-04
AU2017238313A1 (en) 2018-10-11
IL261919B2 (en) 2023-05-01
TWI841521B (zh) 2024-05-11
AU2017238313B2 (en) 2020-04-09
KR20180124097A (ko) 2018-11-20
EP3433879B1 (en) 2019-08-21
WO2017162696A1 (en) 2017-09-28
IL261919B1 (en) 2023-01-01
US20190106804A1 (en) 2019-04-11
EP3433879A1 (en) 2019-01-30
SG11201807698SA (en) 2018-10-30
TW201802024A (zh) 2018-01-16
MY192442A (en) 2022-08-21
IL261919A (en) 2018-10-31
CN109478558A (zh) 2019-03-15
US10731268B2 (en) 2020-08-04
KR102038244B1 (ko) 2019-10-29
GB201604818D0 (en) 2016-05-04

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