PL3433879T3 - Sposób oddolny formowania struktur przewodowych na podłożu - Google Patents
Sposób oddolny formowania struktur przewodowych na podłożuInfo
- Publication number
- PL3433879T3 PL3433879T3 PL17712498T PL17712498T PL3433879T3 PL 3433879 T3 PL3433879 T3 PL 3433879T3 PL 17712498 T PL17712498 T PL 17712498T PL 17712498 T PL17712498 T PL 17712498T PL 3433879 T3 PL3433879 T3 PL 3433879T3
- Authority
- PL
- Poland
- Prior art keywords
- substrate
- way
- form wiring
- wiring structures
- structures
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D13/00—Electrophoretic coating characterised by the process
- C25D13/12—Electrophoretic coating characterised by the process characterised by the article coated
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0004—Apparatus specially adapted for the manufacture or treatment of nanostructural devices or systems or methods for manufacturing the same
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0042—Assembling discrete nanostructures into nanostructural devices
- B82B3/0052—Aligning two or more elements
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D13/00—Electrophoretic coating characterised by the process
- C25D13/22—Servicing or operating apparatus or multistep processes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
- H10D62/118—Nanostructure semiconductor bodies
- H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
- H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/205—Nanosized electrodes, e.g. nanowire electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3451—Structure
- H10P14/3452—Microstructure
- H10P14/3461—Nanoparticles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3451—Structure
- H10P14/3452—Microstructure
- H10P14/3462—Nanowires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
- H10P14/6508—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a liquid
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0436—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
- H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/80—Electrical treatments, e.g. for electroforming
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G02—OPTICS
- G02C—SPECTACLES; SUNGLASSES OR GOGGLES INSOFAR AS THEY HAVE THE SAME FEATURES AS SPECTACLES; CONTACT LENSES
- G02C7/00—Optical parts
- G02C7/02—Lenses; Lens systems ; Methods of designing lenses
- G02C7/04—Contact lenses for the eyes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1131—Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/16—Inspection; Monitoring; Aligning
- H05K2203/163—Monitoring a manufacturing process
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Ophthalmology & Optometry (AREA)
- Optics & Photonics (AREA)
- General Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Toxicology (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrostatic Spraying Apparatus (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
- Medicinal Preparation (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1604818.3A GB201604818D0 (en) | 2016-03-22 | 2016-03-22 | Method for forming structures upon a substrate |
| PCT/EP2017/056739 WO2017162696A1 (en) | 2016-03-22 | 2017-03-21 | Bottom-up method for forming wire structures upon a substrate |
| EP17712498.9A EP3433879B1 (en) | 2016-03-22 | 2017-03-21 | Bottom-up method for forming wire structures upon a substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL3433879T3 true PL3433879T3 (pl) | 2019-12-31 |
Family
ID=55968668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL17712498T PL3433879T3 (pl) | 2016-03-22 | 2017-03-21 | Sposób oddolny formowania struktur przewodowych na podłożu |
Country Status (14)
| Country | Link |
|---|---|
| US (1) | US10731268B2 (pl) |
| EP (1) | EP3433879B1 (pl) |
| JP (1) | JP7012020B2 (pl) |
| KR (1) | KR102038244B1 (pl) |
| CN (1) | CN109478558B (pl) |
| AU (1) | AU2017238313B2 (pl) |
| CA (1) | CA3018117A1 (pl) |
| GB (1) | GB201604818D0 (pl) |
| IL (1) | IL261919B2 (pl) |
| MY (1) | MY192442A (pl) |
| PL (1) | PL3433879T3 (pl) |
| SG (1) | SG11201807698SA (pl) |
| TW (1) | TWI841521B (pl) |
| WO (1) | WO2017162696A1 (pl) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11001687B2 (en) * | 2016-08-31 | 2021-05-11 | Konica Minolta, Inc. | Substrate with functional fine line and method for forming functional fine line |
| GB2576293B (en) * | 2018-06-06 | 2022-10-12 | Xtpl S A | Method for removing bottlenecks |
| GB201812691D0 (en) | 2018-08-03 | 2018-09-19 | Xtpl S A | Method of forming a structure upon a substrate |
| CN116536745B (zh) * | 2022-05-20 | 2025-02-07 | 武汉铢寸科技有限公司 | 在膜中制造纳米孔的方法、装置及叠加电场的生成装置 |
| CN117444229A (zh) * | 2023-10-08 | 2024-01-26 | 清华大学 | 摩擦增材制造方法和装置 |
| US20250267919A1 (en) * | 2024-02-19 | 2025-08-21 | Research 42 LLC | Apparatus for the precision assembly of small particles |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4281342B2 (ja) | 2001-12-05 | 2009-06-17 | セイコーエプソン株式会社 | パターン形成方法および配線形成方法 |
| AU2003290531A1 (en) * | 2002-10-21 | 2004-05-13 | Nanoink, Inc. | Nanometer-scale engineered structures, methods and apparatus for fabrication thereof, and applications to mask repair, enhancement, and fabrication |
| JP4853607B2 (ja) | 2004-07-09 | 2012-01-11 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
| TWI463713B (zh) * | 2006-11-09 | 2014-12-01 | 南諾西斯股份有限公司 | 用於奈米導線對準及沈積的方法 |
| US7294560B1 (en) * | 2006-11-28 | 2007-11-13 | Motorola, Inc. | Method of assembling one-dimensional nanostructures |
| US7892610B2 (en) * | 2007-05-07 | 2011-02-22 | Nanosys, Inc. | Method and system for printing aligned nanowires and other electrical devices |
| FI122644B (fi) * | 2007-06-08 | 2012-04-30 | Teknologian Tutkimuskeskus Vtt | Menetelmä sähköisesti johtavien tai puolijohtavien reittien muodostamiseksi substraatille sekä menetelmän käyttö transistorien tuottamiseen ja anturien valmistukseen |
| WO2009011709A1 (en) * | 2007-07-19 | 2009-01-22 | The Board Of Trustees Of The University Of Illinois | High resolution electrohydrodynamic jet printing for manufacturing systems |
| WO2010028712A1 (en) * | 2008-09-11 | 2010-03-18 | ETH Zürich | Capillarity-assisted, mask-less, nano-/micro-scale spray deposition of particle based functional 0d to 3d micro- and nanostructures on flat or curved substrates with or without added electrocapillarity effect |
| JP2012528020A (ja) * | 2009-05-26 | 2012-11-12 | ナノシス・インク. | ナノワイヤおよび他のデバイスの電場沈着のための方法およびシステム |
| WO2010139386A1 (en) * | 2009-06-06 | 2010-12-09 | Merck Patent Gmbh | Process for aligning nanoparticles |
| US8937293B2 (en) * | 2009-10-01 | 2015-01-20 | Northeastern University | Nanoscale interconnects fabricated by electrical field directed assembly of nanoelements |
| JP5753192B2 (ja) * | 2009-12-22 | 2015-07-22 | クナノ・アーベー | ナノワイヤ構造を製造する方法 |
| US9096954B2 (en) * | 2010-04-27 | 2015-08-04 | National Institute For Materials Science | Metal nanoparticle array structure, device for producing same, and method for producing same |
-
2016
- 2016-03-22 GB GBGB1604818.3A patent/GB201604818D0/en not_active Ceased
-
2017
- 2017-03-21 KR KR1020187030038A patent/KR102038244B1/ko active Active
- 2017-03-21 MY MYPI2018703404A patent/MY192442A/en unknown
- 2017-03-21 AU AU2017238313A patent/AU2017238313B2/en not_active Ceased
- 2017-03-21 CA CA3018117A patent/CA3018117A1/en not_active Abandoned
- 2017-03-21 CN CN201780030699.8A patent/CN109478558B/zh active Active
- 2017-03-21 SG SG11201807698SA patent/SG11201807698SA/en unknown
- 2017-03-21 US US16/087,462 patent/US10731268B2/en active Active
- 2017-03-21 JP JP2018550428A patent/JP7012020B2/ja active Active
- 2017-03-21 PL PL17712498T patent/PL3433879T3/pl unknown
- 2017-03-21 EP EP17712498.9A patent/EP3433879B1/en active Active
- 2017-03-21 WO PCT/EP2017/056739 patent/WO2017162696A1/en not_active Ceased
- 2017-03-22 TW TW106109536A patent/TWI841521B/zh active
-
2018
- 2018-09-23 IL IL261919A patent/IL261919B2/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CA3018117A1 (en) | 2017-09-28 |
| JP7012020B2 (ja) | 2022-01-27 |
| CN109478558B (zh) | 2020-05-05 |
| JP2019519089A (ja) | 2019-07-04 |
| AU2017238313A1 (en) | 2018-10-11 |
| IL261919B2 (en) | 2023-05-01 |
| TWI841521B (zh) | 2024-05-11 |
| AU2017238313B2 (en) | 2020-04-09 |
| KR20180124097A (ko) | 2018-11-20 |
| EP3433879B1 (en) | 2019-08-21 |
| WO2017162696A1 (en) | 2017-09-28 |
| IL261919B1 (en) | 2023-01-01 |
| US20190106804A1 (en) | 2019-04-11 |
| EP3433879A1 (en) | 2019-01-30 |
| SG11201807698SA (en) | 2018-10-30 |
| TW201802024A (zh) | 2018-01-16 |
| MY192442A (en) | 2022-08-21 |
| IL261919A (en) | 2018-10-31 |
| CN109478558A (zh) | 2019-03-15 |
| US10731268B2 (en) | 2020-08-04 |
| KR102038244B1 (ko) | 2019-10-29 |
| GB201604818D0 (en) | 2016-05-04 |
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