PH20134A - Voltage balancing circuit for memory systems - Google Patents

Voltage balancing circuit for memory systems

Info

Publication number
PH20134A
PH20134A PH28760A PH28760A PH20134A PH 20134 A PH20134 A PH 20134A PH 28760 A PH28760 A PH 28760A PH 28760 A PH28760 A PH 28760A PH 20134 A PH20134 A PH 20134A
Authority
PH
Philippines
Prior art keywords
memory systems
balancing circuit
voltage balancing
voltage
circuit
Prior art date
Application number
PH28760A
Other languages
English (en)
Inventor
Charles Joseph Masenas Jr
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of PH20134A publication Critical patent/PH20134A/en

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416Read-write [R-W] circuits 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Logic Circuits (AREA)
PH28760A 1982-04-19 1983-04-11 Voltage balancing circuit for memory systems PH20134A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/369,970 US4555776A (en) 1982-04-19 1982-04-19 Voltage balancing circuit for memory systems

Publications (1)

Publication Number Publication Date
PH20134A true PH20134A (en) 1986-10-02

Family

ID=23457700

Family Applications (1)

Application Number Title Priority Date Filing Date
PH28760A PH20134A (en) 1982-04-19 1983-04-11 Voltage balancing circuit for memory systems

Country Status (5)

Country Link
US (1) US4555776A (fr)
EP (1) EP0092062B1 (fr)
JP (1) JPS58188934A (fr)
DE (1) DE3378703D1 (fr)
PH (1) PH20134A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5093654A (en) * 1989-05-17 1992-03-03 Eldec Corporation Thin-film electroluminescent display power supply system for providing regulated write voltages
US5297089A (en) * 1992-02-27 1994-03-22 International Business Machines Corporation Balanced bit line pull up circuitry for random access memories

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3786442A (en) * 1972-02-24 1974-01-15 Cogar Corp Rapid recovery circuit for capacitively loaded bit lines
US3949385A (en) * 1974-12-23 1976-04-06 Ibm Corporation D.C. Stable semiconductor memory cell
US3936810A (en) * 1975-01-20 1976-02-03 Semi, Inc. Sense line balancing circuit
FR2304991A1 (fr) * 1975-03-15 1976-10-15 Ibm Agencement de circuits pour memoire semi-conductrice et son procede de fonctionnement
JPS538528A (en) * 1976-07-12 1978-01-26 Nec Corp Memory circuit
DE2738678C3 (de) * 1977-08-27 1982-03-04 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Speicherzelle
US4272834A (en) * 1978-10-06 1981-06-09 Hitachi, Ltd. Data line potential setting circuit and MIS memory circuit using the same
DE2855866C3 (de) * 1978-12-22 1981-10-29 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren und Schaltungsanordnung zum Betreiben eines integrierten Halbleiterspeichers
US4302823A (en) * 1979-12-27 1981-11-24 International Business Machines Corp. Differential charge sensing system
US4404662A (en) * 1981-07-06 1983-09-13 International Business Machines Corporation Method and circuit for accessing an integrated semiconductor memory

Also Published As

Publication number Publication date
US4555776A (en) 1985-11-26
EP0092062A2 (fr) 1983-10-26
EP0092062B1 (fr) 1988-12-14
EP0092062A3 (en) 1986-12-10
JPH0378714B2 (fr) 1991-12-16
DE3378703D1 (en) 1989-01-19
JPS58188934A (ja) 1983-11-04

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