NO995342L - Fotodetektor for infrarødt lys og med overflatebelegg som dekker optisk aktive hulrom - Google Patents

Fotodetektor for infrarødt lys og med overflatebelegg som dekker optisk aktive hulrom

Info

Publication number
NO995342L
NO995342L NO995342A NO995342A NO995342L NO 995342 L NO995342 L NO 995342L NO 995342 A NO995342 A NO 995342A NO 995342 A NO995342 A NO 995342A NO 995342 L NO995342 L NO 995342L
Authority
NO
Norway
Prior art keywords
photodetector
infrared light
optically active
surface coatings
coatings covering
Prior art date
Application number
NO995342A
Other languages
English (en)
Other versions
NO995342D0 (no
Inventor
Mark A Dodd
Original Assignee
Lockheed Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lockheed Corp filed Critical Lockheed Corp
Publication of NO995342D0 publication Critical patent/NO995342D0/no
Publication of NO995342L publication Critical patent/NO995342L/no

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1843—Infrared image sensors of the hybrid type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
NO995342A 1998-11-03 1999-11-02 Fotodetektor for infrarødt lys og med overflatebelegg som dekker optisk aktive hulrom NO995342L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/185,249 US6157042A (en) 1998-11-03 1998-11-03 Optical cavity enhancement infrared photodetector

Publications (2)

Publication Number Publication Date
NO995342D0 NO995342D0 (no) 1999-11-02
NO995342L true NO995342L (no) 2000-05-04

Family

ID=22680218

Family Applications (1)

Application Number Title Priority Date Filing Date
NO995342A NO995342L (no) 1998-11-03 1999-11-02 Fotodetektor for infrarødt lys og med overflatebelegg som dekker optisk aktive hulrom

Country Status (4)

Country Link
US (1) US6157042A (no)
EP (1) EP0999599A3 (no)
JP (1) JP5027960B2 (no)
NO (1) NO995342L (no)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6561693B1 (en) * 2000-09-21 2003-05-13 Lockheed Martin Corporation Remote temperature sensing long wave length modulated focal plane array
US6828545B1 (en) * 2001-05-15 2004-12-07 Raytheon Company Hybrid microelectronic array structure having electrically isolated supported islands, and its fabrication
US6593666B1 (en) * 2001-06-20 2003-07-15 Ambient Systems, Inc. Energy conversion systems using nanometer scale assemblies and methods for using same
US6689628B1 (en) 2002-08-15 2004-02-10 Bae Systems Information And Electronic Systems Integration Inc. Method for dense pixel fabrication
US7135698B2 (en) * 2002-12-05 2006-11-14 Lockheed Martin Corporation Multi-spectral infrared super-pixel photodetector and imager
US6897447B2 (en) * 2002-12-05 2005-05-24 Lockheed Martin Corporation Bias controlled multi-spectral infrared photodetector and imager
US7148579B2 (en) 2003-06-02 2006-12-12 Ambient Systems, Inc. Energy conversion systems utilizing parallel array of automatic switches and generators
US7199498B2 (en) * 2003-06-02 2007-04-03 Ambient Systems, Inc. Electrical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same
US7095645B2 (en) * 2003-06-02 2006-08-22 Ambient Systems, Inc. Nanoelectromechanical memory cells and data storage devices
US20040238907A1 (en) * 2003-06-02 2004-12-02 Pinkerton Joseph F. Nanoelectromechanical transistors and switch systems
US7214195B2 (en) * 2003-07-23 2007-05-08 Lockheed Martin Corporation Method of and apparatus for detecting diseased tissue by sensing two bands of infrared radiation
US7518283B2 (en) 2004-07-19 2009-04-14 Cjp Ip Holdings Ltd. Nanometer-scale electrostatic and electromagnetic motors and generators
WO2006044983A2 (en) * 2004-10-20 2006-04-27 Massachusetts Institute Of Technology Multi-spectral pixel and focal plane array
CN101199056B (zh) * 2005-06-14 2011-04-20 皇家飞利浦电子股份有限公司 多视图显示装置
WO2008124084A2 (en) 2007-04-03 2008-10-16 Pinkerton Joseph F Nanoelectromechanical systems and methods for making the same
FR2937791B1 (fr) * 2008-10-24 2010-11-26 Thales Sa Dispositif d'imagerie polarimetrique optimise par rapport au contraste de polarisation
EP2264765A1 (en) * 2009-06-19 2010-12-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Housing for an infrared radiation micro device and method for fabricating such housing
US8608894B2 (en) * 2010-11-23 2013-12-17 Raytheon Company Wafer level packaged focal plane array
WO2013066447A1 (en) 2011-08-01 2013-05-10 The Trustees Of Columbia University In The City Of New York Lens-free planar imager and wireless transmitter
WO2013059665A1 (en) 2011-10-19 2013-04-25 The Trustees Of Columbia University In The City Of New York Ultracompact fabry-perot array for ultracompact hyperspectral imaging
US9373732B2 (en) 2012-02-07 2016-06-21 Semiconductor Components Industries, Llc Image sensors with reflective optical cavity pixels
WO2013148349A1 (en) 2012-03-30 2013-10-03 The Trustees Of Columbia University In The City Of New York Graphene photonics for resonator-enhanced electro-optic devices and all-optical interactions
US9252182B2 (en) 2012-09-05 2016-02-02 Northrop Grumman Systems Corporation Infrared multiplier for photo-conducting sensors
US9212948B2 (en) 2012-11-07 2015-12-15 The Trustees Of Columbia University In The City Of New York Lossless hyperspectral imaging
US10325947B2 (en) 2013-01-17 2019-06-18 Semiconductor Components Industries, Llc Global shutter image sensors with light guide and light shield structures
US11121302B2 (en) 2018-10-11 2021-09-14 SeeQC, Inc. System and method for superconducting multi-chip module
FR3118288B1 (fr) * 2020-12-23 2022-12-30 Thales Sa Integration d'un circuit de detection a base de resonateurs optiques interconnectes sur un circuit de lecteure d'un imageur

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JPS5310861B2 (no) * 1972-04-26 1978-04-17
US4578527A (en) * 1983-11-16 1986-03-25 Optical Coating Laboratory, Inc. Articles having improved reflectance suppression
JPS6413767A (en) * 1987-07-07 1989-01-18 Fujitsu Ltd Semiconductor device
US4783594A (en) * 1987-11-20 1988-11-08 Santa Barbara Research Center Reticular detector array
US4936653A (en) * 1988-06-02 1990-06-26 Santa Barbara Research Center Cerium oxyfluoride antireflection coating for group II-VI photodetectors and process for forming same
JP3249992B2 (ja) * 1990-12-25 2002-01-28 ミノルタ株式会社 シリコン基板またはゲルマニウム基板用反射防止膜
US5261970A (en) * 1992-04-08 1993-11-16 Sverdrup Technology, Inc. Optoelectronic and photovoltaic devices with low-reflectance surfaces
JP2762004B2 (ja) * 1992-08-28 1998-06-04 ユピテル工業株式会社 受光素子
JPH0774385A (ja) * 1993-09-03 1995-03-17 Hamamatsu Photonics Kk 静電誘導型アバランシェフォトダイオード
JPH0774379A (ja) * 1993-09-06 1995-03-17 Mitsuteru Kimura ｐーｎ接合フォトセル
FR2729789B1 (fr) * 1993-09-10 1998-03-20 Thomson Csf Detecteur a puits quantique et procede de realisation
US5479032A (en) * 1994-07-21 1995-12-26 Trustees Of Princeton University Multiwavelength infrared focal plane array detector
US5485015A (en) * 1994-08-25 1996-01-16 The United States Of America As Represented By The Secretary Of The Army Quantum grid infrared photodetector
US5539206A (en) * 1995-04-20 1996-07-23 Loral Vought Systems Corporation Enhanced quantum well infrared photodetector
US5777390A (en) * 1995-10-10 1998-07-07 The University Of Delaware Transparent and opaque metal-semiconductor-metal photodetectors

Also Published As

Publication number Publication date
EP0999599A3 (en) 2003-08-06
JP2000150926A (ja) 2000-05-30
US6157042A (en) 2000-12-05
NO995342D0 (no) 1999-11-02
EP0999599A2 (en) 2000-05-10
JP5027960B2 (ja) 2012-09-19

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