NO844812L - TETRAMETHYLTIN DOPER / SOURCE OF MOCVD-CULTIVATED EPITAXIAL SEMI-PART LAYER - Google Patents
TETRAMETHYLTIN DOPER / SOURCE OF MOCVD-CULTIVATED EPITAXIAL SEMI-PART LAYERInfo
- Publication number
- NO844812L NO844812L NO844812A NO844812A NO844812L NO 844812 L NO844812 L NO 844812L NO 844812 A NO844812 A NO 844812A NO 844812 A NO844812 A NO 844812A NO 844812 L NO844812 L NO 844812L
- Authority
- NO
- Norway
- Prior art keywords
- doper
- tetramethyltin
- mocvd
- cultivated
- source
- Prior art date
Links
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US48209283A | 1983-04-04 | 1983-04-04 | |
PCT/US1984/000403 WO1984003905A1 (en) | 1983-04-04 | 1984-03-15 | Tetramethyltin dopant source for mocvd grown epitaxial semiconductor layers |
Publications (3)
Publication Number | Publication Date |
---|---|
NO844812L true NO844812L (en) | 1984-12-03 |
NO161813B NO161813B (en) | 1989-06-19 |
NO161813C NO161813C (en) | 1989-09-27 |
Family
ID=26770169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO844812A NO161813C (en) | 1983-04-04 | 1984-12-03 | PROCEDURE FOR, IN A METAL ORGANIC CHEMICAL VAPORATING SYSTEM INCLUDING A REACTOR ROOM, AA PROVIDES EPITAKSELY A TEAM OF SEMICONDUCTOR MATERIAL. |
Country Status (2)
Country | Link |
---|---|
HK (1) | HK34088A (en) |
NO (1) | NO161813C (en) |
-
1984
- 1984-12-03 NO NO844812A patent/NO161813C/en unknown
-
1988
- 1988-05-02 HK HK34088A patent/HK34088A/en unknown
Also Published As
Publication number | Publication date |
---|---|
NO161813C (en) | 1989-09-27 |
HK34088A (en) | 1988-05-13 |
NO161813B (en) | 1989-06-19 |
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