NO743848L - - Google Patents
Info
- Publication number
- NO743848L NO743848L NO743848A NO743848A NO743848L NO 743848 L NO743848 L NO 743848L NO 743848 A NO743848 A NO 743848A NO 743848 A NO743848 A NO 743848A NO 743848 L NO743848 L NO 743848L
- Authority
- NO
- Norway
- Prior art keywords
- cover layer
- tlpd
- metal
- thallium
- anode
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000013543 active substance Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052716 thallium Inorganic materials 0.000 claims description 3
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004279 X-ray Guinier Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- -1 bromine ions Chemical class 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- JGUQDUKBUKFFRO-CIIODKQPSA-N dimethylglyoxime Chemical compound O/N=C(/C)\C(\C)=N\O JGUQDUKBUKFFRO-CIIODKQPSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000029142 excretion Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- SGMHGVVTMOGJMX-UHFFFAOYSA-N n-naphthalen-2-yl-2-sulfanylacetamide Chemical compound C1=CC=CC2=CC(NC(=O)CS)=CC=C21 SGMHGVVTMOGJMX-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- FYWSTUCDSVYLPV-UHFFFAOYSA-N nitrooxythallium Chemical compound [Tl+].[O-][N+]([O-])=O FYWSTUCDSVYLPV-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
- C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
- C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
- C25B11/073—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material
- C25B11/075—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material consisting of a single catalytic element or catalytic compound
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G55/00—Compounds of ruthenium, rhodium, palladium, osmium, iridium, or platinum
- C01G55/002—Compounds containing, besides ruthenium, rhodium, palladium, osmium, iridium, or platinum, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/46—Treatment of water, waste water, or sewage by electrochemical methods
- C02F1/461—Treatment of water, waste water, or sewage by electrochemical methods by electrolysis
- C02F1/46104—Devices therefor; Their operating or servicing
- C02F1/46109—Electrodes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/76—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by a space-group or by other symmetry indications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/77—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by unit-cell parameters, atom positions or structure diagrams
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/10—Solid density
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/46—Treatment of water, waste water, or sewage by electrochemical methods
- C02F1/461—Treatment of water, waste water, or sewage by electrochemical methods by electrolysis
- C02F1/467—Treatment of water, waste water, or sewage by electrochemical methods by electrolysis by electrochemical disinfection; by electrooxydation or by electroreduction
- C02F1/4672—Treatment of water, waste water, or sewage by electrochemical methods by electrolysis by electrochemical disinfection; by electrooxydation or by electroreduction by electrooxydation
- C02F1/4674—Treatment of water, waste water, or sewage by electrochemical methods by electrolysis by electrochemical disinfection; by electrooxydation or by electroreduction by electrooxydation with halogen or compound of halogens, e.g. chlorine, bromine
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/46—Treatment of water, waste water, or sewage by electrochemical methods
- C02F1/461—Treatment of water, waste water, or sewage by electrochemical methods by electrolysis
- C02F1/46104—Devices therefor; Their operating or servicing
- C02F1/46109—Electrodes
- C02F2001/46133—Electrodes characterised by the material
- C02F2001/46138—Electrodes comprising a substrate and a coating
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Hydrology & Water Resources (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Water Supply & Treatment (AREA)
- Electrodes For Compound Or Non-Metal Manufacture (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Primary Cells (AREA)
- Secondary Cells (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Electrolytic Production Of Metals (AREA)
- Led Devices (AREA)
Description
Fremstilling og anvendelse av en ny elektrokjemisk aktiv substans for dekksjiktet til metallanoder.
Oppfinnelsen vedrører fremstillingen og anvendelsen av en ny elektrokjemisk aktiv substans som dekksjikt på metallanoder som i dag benyttes med godt resultat ved et stort antall elektrolyseproses-ser.
Et stort antall patenter og patentsøknader (f. eks. de tyske patenter nr. 55*323 og nr. 77«963 og de tyske Offenlegungs-schrifter nr. 1.671.422, nr. 1.917-040, nr. 1.813.944, nr. 1.962.860 og nr. 2.200.500) vedrører metallanoder som inneholder dekksjikt av de forskjelligste sammensetninger for å unngå ulempene ved anodebære-legemer av■passiverbart metall, som titan, tantal, zirkon, niob osv. I meget stor utstrekning har imidlertid de substanser som er foreslått for påføring som dekksjikt eller som vesentlig bestand-del av dette dessverre vist seg å være ubrukelige, da deres elektriske ledningsevne og/eller deres kjemiske og elektrokjemiske bestandig-het ikke er tilfredsstillende, henholdsvis at en rekke av dé fore-slåtte substanser overhodet ikke eller ikke så lett kan anbringes på anodebærelegemet uten å påvirke i negativ grad de krav som stilles til et dekksjikt.
Mens f. eks. jordalkalipalladater, som CaPdlJO^, SrPD^O^
og NaPd^O^, allerede har kunnet syntetiseres i ren, krystallin form, er dét inntil nu ikke kjent en fremstilling og tilstrekkelig karakterisering av TlPd^Ojj.
Den oppgave som ligger til grunn for oppfinnelsen er å til-veiebringe en fremstillingsmetode og tilstrekkelig karakterisering
av en ny elektrokjemisk aktiv substans for dekksjiktet til metallanoder og anvendelsen av dette i en anode som dermed forbedrer sine egenskaper. Det dreier seg herved om fremstillingen og anvendelsen av
det nye kardinalrøde talliumpallada.t som viser de mest gunstige elektrokjemiske og elektriske egenskaper som aktivt materiale for belegg-ing av metallanoder.
Ifølge foreliggende oppfinnelse lykkes det for første gang å oppnå TlPd,0., som kardinalrød forbindelse i støkiometrisk sammen-setning. Reaksjonen forløper allerede ved 500 oC. Det dreier seg om en gass-faststoffsreaksjon. Som kjent foreligger ved denne tempera-tur likevekten
Fremstillingen skjer etter omsetningene:
Også den direkte omsetning av Tl^ O^ med PdO fører til det samme resultat.
Fremstilling og eksempel:
1 mol PdO blir intensivt blandet med 4-5 mol T1N0-. og oppvarmet langsomt til 500 - 600 o C i skip av sinterkorund. Der Jved fremkommer ved oppspalting av talliumnitrat over 300°C det kubiske T^O1 i dypsvarte krystaller, som fra 500°C reagerer med PdO. Over-skudd av T120^blir ved sublimering fjernet ved 650°C, og palladium fjernet ved utkoking med kongevann. Det kardinalrøde reaksjonspro-dukt inneholder etter guinieropptak ingen ytterligere forurensninger.
Analysen av denne forbindelse var forsåvidt komplisert
da 'BlPd^O^ bare er godt løselig i hydrogenbromsyre, hvorved tilstede-værelsen av bromioner i analysen forstyrrer på grunn av dannelsen av tungtløselig Tlbr og PdBrg. Det var derfor nødvendig å koke den hy-drogenbromsure oppløsning av TlPd^O^med noen dråper elementært brom for å bringe det bestandig i små mengder utfallende TIBr i oppløsning som TlBr^, deretter,kvantitativt å drive ut brom ved koking med kon-sentrert HNO, og, da også de oksyderende egenskaper til salpetersyre forhindrer den benyttede felling med organiske reaksjonsmidler, å
l?ø|4e av dette med svovelsyre. Den gravimetriske bestemmelse av talli-um ble gjennomført ved fellingen med tionalid. Palladium blir utfelt med dimetylglyoksim.
TlPd^Ojjer under oppspalting lett løsbart i konstant koken-de hydrogenbromsyre, dårlig oppløsbart i kongevann og perklorsyre, tungt løselig i svovelsyre, salpetersyre,maursyre og alkaliske opp-løsningsmidler. Over 750°C.oppspaltes TlPd^O^under dannelse av elementært palladium og Tlo0 . Den pyknometriske tetthet ble målt til 8,99 g/cm 3 og stemmer godt overens med røntgentettheten på 8,83 g/cm 3. Den røntgenografiske bedømmelse ga for TlPd^O^-.en kubisk elementær-celle:
Gitterkonstant a = 9,596 0,002 Å
Volum for T _
elementærcellen V"' = 883,68
Antall formel-
enheter Z = 8
Røntgentetthet SRq. = 8,83 g/cm<5>
Av nettplanstatistikken fremkommer slukkebetingelsene:
hKl : h + k = 2n-l
k + 1 = 2n-l
(h + 1) = 2n-l
grunn av disse slukkebetingelser kommer det for TlPd^O^ tale romgruppene Fir^m-O^, F432-05, F?3m - , FnØ'-!^-5 og F23-T2.
Den rasterelektronmikroskopiske undersøkelse ga tilstede-værelsen av' oktaedre delvis som tvillinger.
Sammenfatter man resultatene bekrefter disse tilstedevær-elsen av en kubisk flatesentrert struktur.
Anbringer man nu TlPd^O^på legerte eller ulegerte metall-anodegrunnlegemer sammen.med fastgjøringsmidler, så kan elektrolysen av NaCl-, KCl-, klorat- og HCl-oppløsninger gjennomføres såvel.som naturligvis også andre elektrokjemiske prosesser.
Allerede en tilstedeværelse av 20 % i dekksjiktet gir en tilfredsstillende elektrokjemisk virkning. Ved kontinuerlig drift (10.000 A/m o) holdt en slik belagt metallariode seg over et tidsrom på 12 måneder uten forandring av de elektriske egenskaper, såsom strøm-utbytte, cellespenning, eller elektrokjemisk virkning, såsom klorut-skillelse, fasthet for dekksjiktet mot slitasje.
Claims (2)
1. Fremstillingsmetode for talliumpalladat, karakterisert ved at forbindelsen oppnås kardinalrød, kubisk flatesentrert, støkiometrisk, tilstrekkelig karakterisert i.ren krystal-linsk form og således utgjør en ny elektrokjemisk aktiv substans for dekksjiktet til metallanoder.
2. Metallanode med den ifølge krav 1 fremstilte forbindelse som aktivt dekksjikt, karakterisert ved åt dekksjiktet hovedsakelig eller utelukkende består av TlPd,0(l.
3 4 -
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2353995A DE2353995C3 (de) | 1973-10-27 | 1973-10-27 | Kristallines TL Pd3 O4 und dessen Verwendung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO743848L true NO743848L (no) | 1975-05-26 |
Family
ID=5896652
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO743848A NO743848L (no) | 1973-10-27 | 1974-10-25 | |
| NO781320A NO143031C (no) | 1973-10-27 | 1978-04-14 | Metallanode for elektrokjemiske prosesser. |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO781320A NO143031C (no) | 1973-10-27 | 1978-04-14 | Metallanode for elektrokjemiske prosesser. |
Country Status (18)
| Country | Link |
|---|---|
| US (1) | US3991158A (no) |
| JP (1) | JPS5078573A (no) |
| AT (1) | AT340368B (no) |
| BE (1) | BE821473A (no) |
| CA (1) | CA1047229A (no) |
| CH (1) | CH602940A5 (no) |
| DE (1) | DE2353995C3 (no) |
| ES (1) | ES431410A1 (no) |
| FI (1) | FI312174A (no) |
| FR (1) | FR2249038B1 (no) |
| GB (2) | GB1478599A (no) |
| IE (1) | IE39944B1 (no) |
| IT (1) | IT1030737B (no) |
| NL (1) | NL7414080A (no) |
| NO (2) | NO743848L (no) |
| SE (2) | SE403904B (no) |
| SU (1) | SU679155A3 (no) |
| ZA (1) | ZA746547B (no) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1164477A (en) * | 1965-12-28 | 1969-09-17 | Matsushita Electric Ind Co Ltd | Electrochemical Electrode |
| US3560144A (en) * | 1968-06-28 | 1971-02-02 | Du Pont | Pyrochlore-type ternary oxides tl2ru207 and tl2ir207 |
-
1973
- 1973-10-27 DE DE2353995A patent/DE2353995C3/de not_active Expired
-
1974
- 1974-09-03 CH CH1197774A patent/CH602940A5/xx not_active IP Right Cessation
- 1974-10-09 AT AT811574A patent/AT340368B/de not_active IP Right Cessation
- 1974-10-15 IE IE2119/74A patent/IE39944B1/xx unknown
- 1974-10-15 ZA ZA00746547A patent/ZA746547B/xx unknown
- 1974-10-22 US US05/516,996 patent/US3991158A/en not_active Expired - Lifetime
- 1974-10-24 CA CA212,232A patent/CA1047229A/en not_active Expired
- 1974-10-24 SE SE7413414A patent/SE403904B/xx unknown
- 1974-10-24 GB GB16011/74A patent/GB1478599A/en not_active Expired
- 1974-10-24 FI FI3121/74A patent/FI312174A/fi unknown
- 1974-10-24 GB GB1680/77A patent/GB1478600A/en not_active Expired
- 1974-10-25 BE BE149870A patent/BE821473A/xx unknown
- 1974-10-25 IT IT28788/74A patent/IT1030737B/it active
- 1974-10-25 NO NO743848A patent/NO743848L/no unknown
- 1974-10-26 ES ES431410A patent/ES431410A1/es not_active Expired
- 1974-10-26 JP JP49123861A patent/JPS5078573A/ja active Pending
- 1974-10-28 NL NL7414080A patent/NL7414080A/xx not_active Application Discontinuation
- 1974-10-29 FR FR7440601A patent/FR2249038B1/fr not_active Expired
-
1975
- 1975-05-12 SU SU752134755A patent/SU679155A3/ru active
-
1978
- 1978-01-03 SE SE7800072A patent/SE7800072L/xx unknown
- 1978-04-14 NO NO781320A patent/NO143031C/no unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CH602940A5 (no) | 1978-08-15 |
| CA1047229A (en) | 1979-01-30 |
| BE821473A (fr) | 1975-02-17 |
| ES431410A1 (es) | 1977-02-01 |
| NO781320L (no) | 1975-04-29 |
| ZA746547B (en) | 1975-10-29 |
| GB1478600A (en) | 1977-07-06 |
| DE2353995B2 (de) | 1977-09-15 |
| SE7413414L (no) | 1975-04-28 |
| GB1478599A (en) | 1977-07-06 |
| IE39944L (en) | 1975-04-27 |
| SE7800072L (sv) | 1978-01-03 |
| AT340368B (de) | 1977-12-12 |
| IT1030737B (it) | 1979-04-10 |
| NO143031C (no) | 1980-12-03 |
| DE2353995A1 (de) | 1975-05-07 |
| FR2249038B1 (no) | 1981-08-07 |
| JPS5078573A (no) | 1975-06-26 |
| NO143031B (no) | 1980-08-25 |
| US3991158A (en) | 1976-11-09 |
| FR2249038A1 (no) | 1975-05-23 |
| IE39944B1 (en) | 1979-01-31 |
| SU679155A3 (ru) | 1979-08-05 |
| NL7414080A (nl) | 1975-04-29 |
| FI312174A (no) | 1975-04-28 |
| SE403904B (sv) | 1978-09-11 |
| DE2353995C3 (de) | 1978-05-24 |
| ATA811574A (de) | 1977-04-15 |
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