NO20063964L - Nano-basert anordning og apparat - Google Patents

Nano-basert anordning og apparat

Info

Publication number
NO20063964L
NO20063964L NO20063964A NO20063964A NO20063964L NO 20063964 L NO20063964 L NO 20063964L NO 20063964 A NO20063964 A NO 20063964A NO 20063964 A NO20063964 A NO 20063964A NO 20063964 L NO20063964 L NO 20063964L
Authority
NO
Norway
Prior art keywords
nano
based device
Prior art date
Application number
NO20063964A
Other languages
English (en)
Other versions
NO340226B1 (no
Inventor
Anthony F Veneruso
David Gerez
John Ullo
Bingqing Wei
Abhilash Krishna
Original Assignee
Schlumberger Technology Bv
Board Of Supervisors Of Louisiana Univ And Agricultural And Mechanical College
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schlumberger Technology Bv, Board Of Supervisors Of Louisiana Univ And Agricultural And Mechanical College filed Critical Schlumberger Technology Bv
Publication of NO20063964L publication Critical patent/NO20063964L/no
Publication of NO340226B1 publication Critical patent/NO340226B1/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • E—FIXED CONSTRUCTIONS
    • E21—EARTH OR ROCK DRILLING; MINING
    • E21B—EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
    • E21B43/00—Methods or apparatus for obtaining oil, gas, water, soluble or meltable materials or a slurry of minerals from wells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Mining & Mineral Resources (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Geology (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Fluid Mechanics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Micromachines (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Contacts (AREA)
  • Electrodes Of Semiconductors (AREA)
NO20063964A 2005-11-10 2006-09-05 Nano-basert anordning og apparat NO340226B1 (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/164,118 US7629604B2 (en) 2005-11-10 2005-11-10 Nano-based device and method

Publications (2)

Publication Number Publication Date
NO20063964L true NO20063964L (no) 2007-05-11
NO340226B1 NO340226B1 (no) 2017-03-20

Family

ID=37056227

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20063964A NO340226B1 (no) 2005-11-10 2006-09-05 Nano-basert anordning og apparat

Country Status (5)

Country Link
US (1) US7629604B2 (no)
CA (1) CA2549454C (no)
GB (2) GB2457613B (no)
NO (1) NO340226B1 (no)
RU (1) RU2442746C2 (no)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8131674B2 (en) 2004-06-25 2012-03-06 Apple Inc. Methods and systems for managing data
US7874250B2 (en) * 2005-02-09 2011-01-25 Schlumberger Technology Corporation Nano-based devices for use in a wellbore
US8297351B2 (en) 2007-12-27 2012-10-30 Schlumberger Technology Corporation Downhole sensing system using carbon nanotube FET
US8319175B2 (en) 2010-08-31 2012-11-27 Schlumberger Technology Corporation Nano-tips based gas ionization chamber for neutron detection
WO2012071055A1 (en) * 2010-11-22 2012-05-31 Mcclung Guy L Iii Wellbore operations, system, and methods with mcnano devices
RU2599461C1 (ru) * 2015-06-11 2016-10-10 федеральное государственное бюджетное образовательное учреждение высшего образования "Ульяновский государственный университет" Нанопереключатель

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5266155A (en) * 1990-06-08 1993-11-30 The United States Of America As Represented By The Secretary Of The Navy Method for making a symmetrical layered thin film edge field-emitter-array

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7336474B2 (en) * 1999-09-23 2008-02-26 Schlumberger Technology Corporation Microelectromechanical devices
NO319947B1 (no) * 2000-09-05 2005-10-03 Schlumberger Holdings Mikrosvitsjer for nedhulls-anvendelse
JP3737696B2 (ja) * 2000-11-17 2006-01-18 株式会社東芝 横型の電界放出型冷陰極装置の製造方法
KR100658666B1 (ko) * 2001-02-16 2006-12-15 삼성에스디아이 주식회사 카본 나노튜브 에미터를 갖는 전계 방출 표시소자
US6541906B2 (en) * 2001-05-23 2003-04-01 Industrial Technology Research Institute Field emission display panel equipped with a dual-layer cathode and an anode on the same substrate and method for fabrication
JP4741764B2 (ja) * 2001-09-26 2011-08-10 キヤノン株式会社 電子放出素子
US8091477B2 (en) * 2001-11-27 2012-01-10 Schlumberger Technology Corporation Integrated detonators for use with explosive devices
GB2388420B (en) * 2001-11-27 2004-05-12 Schlumberger Holdings Integrated activating device for explosives
US6851370B2 (en) * 2002-04-30 2005-02-08 Kdi Precision Products, Inc. Integrated planar switch for a munition
JP2004071527A (ja) 2002-08-08 2004-03-04 Sp Solution:Kk 電子放出装置
JP2004259684A (ja) 2003-02-27 2004-09-16 Toshio Goto 電子放出素子材料及びその製造方法
JP2005071965A (ja) 2003-08-28 2005-03-17 Mitsubishi Electric Corp 電界放出型冷陰極構造、その製造方法、及び平板型画像表示装置
JP4432478B2 (ja) 2003-12-05 2010-03-17 ソニー株式会社 筒状分子の製造方法および筒状分子構造、並びに表示装置および電子素子
CN100583353C (zh) * 2004-05-26 2010-01-20 清华大学 场发射显示器的制备方法
EP1698878A1 (en) 2005-03-04 2006-09-06 Inficon GmbH Electrode configuration and pressure measuring apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5266155A (en) * 1990-06-08 1993-11-30 The United States Of America As Represented By The Secretary Of The Navy Method for making a symmetrical layered thin film edge field-emitter-array

Also Published As

Publication number Publication date
GB2457613A (en) 2009-08-26
RU2442746C2 (ru) 2012-02-20
CA2549454A1 (en) 2007-05-10
GB2432254A (en) 2007-05-16
GB2432254B (en) 2010-04-21
US20070105249A1 (en) 2007-05-10
GB2457613B (en) 2010-10-06
US7629604B2 (en) 2009-12-08
GB0616015D0 (en) 2006-09-20
RU2006139740A (ru) 2008-05-20
NO340226B1 (no) 2017-03-20
CA2549454C (en) 2015-06-30
GB0909484D0 (en) 2009-07-15

Similar Documents

Publication Publication Date Title
DK1842399T4 (da) Belysningsapparat og fremgangsmåde
DE602006016186D1 (de) Anzeigevorrichtung und Anzeigeverfahren
DE602006020556D1 (de) Bilddecodierungsvorrichtung und bilddecodierungsverfahren
DE602006009191D1 (de) Bildaufnahmegerät und -verfahren
DE602006020651D1 (de) Kalibrierverfahren und -vorrichtung
DE602006011600D1 (de) Audiocodierungseinrichtung und audiocodierungsverfahren
FI20060449A0 (fi) Mammografiamenetelmä ja mammografialaite
DE602005025783D1 (de) Bildverarbeitungsvorrichtung und bildverarbeitungsverfahren
DK2191675T3 (da) Offentlig advarselsfremgangsmåde og tilsvarende apparat
DE602006014957D1 (de) Audiocodierungseinrichtung und audiocodierungsverfahren
DK3589081T3 (da) Effektstyringfremgangsmåder og -apparat
DE602006001473D1 (de) Druckvorrichtung und Druckverfahren
DK2130392T3 (da) Konfigurabel indretning og fremgangsmåde
DK1937332T3 (da) Infusionsapparat og aktuator hertil
DE602006008872D1 (de) Ladevorrichtung und diese verwendender Apparat
DK3457653T3 (da) Ofdm modtagende apparat og fremgangsmåde deraf
DE602006007889D1 (de) Belichtungsverfahren und -vorrichtung
NO20063964L (no) Nano-basert anordning og apparat
NO20050503D0 (no) Fremgangsmate og anordning
DE602006020989D1 (de) Bildverarbeitungseinrichtung und bildverarbeitungsverfahren
NO345044B1 (no) Fremgangsmåte og apparat for formasjonstesting
DK1872099T3 (da) Vejeapparat og -fremgangsmåde
EP1955013A4 (en) DEVICE AND APPARATUS FOR ACCELERATING FORMS
NO322006B2 (no) Anordning og fremgangsmåte for brønnintervenering
DK1915602T3 (da) Apparat og fremgangsmåde til undervandsteleinspektion

Legal Events

Date Code Title Description
MM1K Lapsed by not paying the annual fees