NO20043014L - Sensor fremstilt i en silisium-pa-isolator struktur og som har redusert strompaslagsdrift - Google Patents

Sensor fremstilt i en silisium-pa-isolator struktur og som har redusert strompaslagsdrift

Info

Publication number
NO20043014L
NO20043014L NO20043014A NO20043014A NO20043014L NO 20043014 L NO20043014 L NO 20043014L NO 20043014 A NO20043014 A NO 20043014A NO 20043014 A NO20043014 A NO 20043014A NO 20043014 L NO20043014 L NO 20043014L
Authority
NO
Norway
Prior art keywords
silicon
insulator structure
stroke operation
sensor manufactured
stocking
Prior art date
Application number
NO20043014A
Other languages
English (en)
Other versions
NO328304B1 (no
Inventor
Russell L Johnson
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Publication of NO20043014L publication Critical patent/NO20043014L/no
Publication of NO328304B1 publication Critical patent/NO328304B1/no

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • Indication And Recording Devices For Special Purposes And Tariff Metering Devices (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)
NO20043014A 2001-12-18 2004-07-15 Sensor fremstilt i en silisium-pa-isolator struktur og som har redusert strompaslagsdrift NO328304B1 (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/024,815 US6510742B1 (en) 2001-12-18 2001-12-18 Sensor formed on silicon on insulator structure and having reduced power up drift
PCT/US2002/038300 WO2003052369A1 (en) 2001-12-18 2002-12-03 Sensor formed on silicon on insulator structure and having reduced power up drift

Publications (2)

Publication Number Publication Date
NO20043014L true NO20043014L (no) 2004-09-02
NO328304B1 NO328304B1 (no) 2010-01-25

Family

ID=21822533

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20043014A NO328304B1 (no) 2001-12-18 2004-07-15 Sensor fremstilt i en silisium-pa-isolator struktur og som har redusert strompaslagsdrift

Country Status (7)

Country Link
US (1) US6510742B1 (no)
JP (1) JP4195388B2 (no)
CN (1) CN1307412C (no)
AU (1) AU2002346598A1 (no)
CA (1) CA2470792A1 (no)
NO (1) NO328304B1 (no)
WO (1) WO2003052369A1 (no)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6870236B2 (en) * 2003-05-20 2005-03-22 Honeywell International, Inc. Integrated resistor network for multi-functional use in constant current or constant voltage operation of a pressure sensor
US7284438B2 (en) * 2005-11-10 2007-10-23 Honeywell International Inc. Method and system of providing power to a pressure and temperature sensing element
US7278319B2 (en) * 2005-11-10 2007-10-09 Honeywell International Inc. Pressure and temperature sensing element
EP2182340A1 (en) 2008-10-30 2010-05-05 Radi Medical Systems AB Pressure Sensor and Guide Wire Assembly
US20100109104A1 (en) * 2008-10-30 2010-05-06 Radi Medical Systems Ab Pressure sensor and wire guide assembly
CN102175363A (zh) * 2010-12-31 2011-09-07 东莞市百赛仪器有限公司 用离子束溅射硅薄膜制作的压力应变器件及方法
EP2769191B1 (en) 2011-10-21 2020-03-04 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Sic high temperature pressure transducer
CN102491256A (zh) * 2011-12-27 2012-06-13 上海先进半导体制造股份有限公司 采用多种压敏元件的复合传感器及其制造方法
DE102020105210A1 (de) * 2020-02-27 2021-09-02 Tdk Electronics Ag Sensor und Verfahren zur Herstellung eines Sensors

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4771639A (en) * 1987-09-02 1988-09-20 Yokogawa Electric Corporation Semiconductor pressure sensor
DE69528775T2 (de) * 1994-12-20 2003-07-03 Foxboro Co AC Speisung eines Polysilizium Druckwandlers
US6065346A (en) * 1999-03-29 2000-05-23 Honeywell Inc. Measurement system utilizing a sensor formed on a silicon on insulator structure

Also Published As

Publication number Publication date
JP4195388B2 (ja) 2008-12-10
AU2002346598A1 (en) 2003-06-30
US6510742B1 (en) 2003-01-28
JP2005513434A (ja) 2005-05-12
CN1307412C (zh) 2007-03-28
WO2003052369A1 (en) 2003-06-26
CN1620598A (zh) 2005-05-25
NO328304B1 (no) 2010-01-25
CA2470792A1 (en) 2003-06-26

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Legal Events

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