NO20035244L - Ledningsovergang for en halvlederdetektor - Google Patents
Ledningsovergang for en halvlederdetektorInfo
- Publication number
- NO20035244L NO20035244L NO20035244A NO20035244A NO20035244L NO 20035244 L NO20035244 L NO 20035244L NO 20035244 A NO20035244 A NO 20035244A NO 20035244 A NO20035244 A NO 20035244A NO 20035244 L NO20035244 L NO 20035244L
- Authority
- NO
- Norway
- Prior art keywords
- conductor
- semiconductor
- detector
- crossover
- semiconductor detector
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 230000007704 transition Effects 0.000 title 1
- 239000004020 conductor Substances 0.000 abstract 6
- 238000000441 X-ray spectroscopy Methods 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2914—Measurement of spatial distribution of radiation
- G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
- G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- High Energy & Nuclear Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Semiconductor Integrated Circuits (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10213812A DE10213812B4 (de) | 2002-03-27 | 2002-03-27 | Leitungsüberführung für einen Halbleiter-Detektor |
| PCT/EP2003/003209 WO2003081637A2 (de) | 2002-03-27 | 2003-03-27 | Leitungsüberführung für einen halbleiter-detektor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NO20035244L true NO20035244L (no) | 2003-11-26 |
| NO20035244D0 NO20035244D0 (no) | 2003-11-26 |
Family
ID=28050925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20035244A NO20035244D0 (no) | 2002-03-27 | 2003-11-26 | Ledningsovergang for en halvlederdetektor |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7238949B2 (no) |
| EP (1) | EP1490911B1 (no) |
| AT (1) | ATE401668T1 (no) |
| AU (1) | AU2003219104A1 (no) |
| DE (2) | DE10213812B4 (no) |
| NO (1) | NO20035244D0 (no) |
| WO (1) | WO2003081637A2 (no) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10260229B3 (de) | 2002-12-20 | 2005-08-18 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Halbleiter-Detektor mit optimiertem Strahlungseintrittsfenster |
| FI20041479A (fi) * | 2004-11-17 | 2006-05-05 | Artto Aurola | Muunnettu puolijohdeajautumisilmaisin |
| US20070072332A1 (en) * | 2005-09-26 | 2007-03-29 | Josef Kemmer | Semiconductor radiation detectors and method for fabrication thereof |
| EP1873834B1 (de) | 2006-06-29 | 2008-12-10 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Löschbarriere, insbesondere für einem Halbleiterdetektor, und zugehöriges Betriebsverfahren |
| GB2446429A (en) * | 2006-12-08 | 2008-08-13 | E2V Tech | Photosensor with variable sensing area |
| CN101281148B (zh) * | 2007-07-27 | 2011-01-05 | 江苏天瑞仪器股份有限公司 | 一种高分辨率的半导体核辐射探测器 |
| US7968959B2 (en) * | 2008-10-17 | 2011-06-28 | The United States Of America As Represented By The Secretary Of The Navy | Methods and systems of thick semiconductor drift detector fabrication |
| US20100264319A1 (en) * | 2009-04-17 | 2010-10-21 | Massimo Morichi | Intelligent Sensor Platform |
| US8698091B2 (en) * | 2009-06-10 | 2014-04-15 | Moxtek, Inc. | Semiconductor MOS entrance window for radiation detectors |
| US8314468B2 (en) * | 2009-06-10 | 2012-11-20 | Moxtek, Inc. | Variable ring width SDD |
| US8421172B2 (en) | 2009-07-16 | 2013-04-16 | Canberra Industries, Inc. | Simplified silicon drift detector and wraparound neutron detector |
| DE102010027128A1 (de) | 2010-07-14 | 2012-01-19 | Pnsensor Gmbh | Halbleiterbauelement, insbesondere Strahlungsdetektor, mit einem integrierten Überspannungsschutz |
| GB2486208A (en) * | 2010-12-06 | 2012-06-13 | Melexis Tessenderlo Nv | Demodulation sensor and method for detection and demodulation of temporarily modulated electromagnetic fields for use in Time of Flight applications. |
| DE102010055633A1 (de) | 2010-12-22 | 2012-06-28 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Halbleiterdetektor mit versetztem Bondkontakt |
| DE102011104489A1 (de) | 2011-06-17 | 2012-12-20 | Pndetector Gmbh | Halbleiterdriftdetektor und entsprechendes Betriebsverfahren |
| US9530902B2 (en) * | 2012-06-20 | 2016-12-27 | Oxford Instruments Analytical Oy | Two-dimensional guard structure and a radiation detector with the same |
| US8921797B2 (en) * | 2012-06-20 | 2014-12-30 | Oxford Instruments Analytical Oy | Leakage current collection structure and a radiation detector with the same |
| WO2016162865A1 (en) * | 2015-04-07 | 2016-10-13 | Verifood, Ltd. | Detector for spectrometry system |
| ITUB20159644A1 (it) | 2015-12-24 | 2017-06-24 | Horiba Ltd | Rivelatore a semiconduttore, rivelatore di radiazione e apparecchiatura di rivelazione di radiazione. |
| ITUB20159390A1 (it) * | 2015-12-24 | 2017-06-24 | Fond Bruno Kessler | Rivelatore a semiconduttore, rivelatore di radiazione e apparecchiatura di rivelazione di radiazione. |
| IT201700122669A1 (it) * | 2017-10-27 | 2019-04-27 | Lfoundry Srl | Sensore integrato di radiazione ionizzante e di particelle ionizzanti |
| DE102018008959B4 (de) | 2018-11-14 | 2021-03-25 | Karlsruher Institut für Technologie | Vorrichtung zum Erfassen von Röntgenstrahlung und Verfahren zum Herstellen einer solchen Vorrichtung zum Erfassen von Röntgenstrahlung |
| CN109671799B (zh) * | 2018-12-21 | 2020-08-18 | 中国科学院微电子研究所 | 漂移探测器及其制作方法 |
| US20220093814A1 (en) * | 2019-02-04 | 2022-03-24 | Horiba, Ltd. | Radiation detection element, radiation detector and radiation detection device |
| CN110854223B (zh) * | 2019-11-22 | 2021-04-06 | 中国科学院微电子研究所 | 一种漂移探测器的制备方法及漂移探测器 |
| CN110854222B (zh) * | 2019-11-22 | 2021-04-06 | 中国科学院微电子研究所 | 一种漂移探测器的双面制备方法及漂移探测器 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2823881C3 (de) * | 1978-05-31 | 1982-03-18 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung von elektrischen Dünnschichtschaltungen für die Herstellung integrierter Leiterbahnüberkreuzungen |
| DE3586279D1 (de) * | 1984-04-25 | 1992-08-06 | Josef Dr Kemmer | Verarmtes halbleiterelement mit einem potential-minimum fuer majoritaetstraeger. |
| DE3427476A1 (de) * | 1984-04-25 | 1985-10-31 | Josef Dr. 8048 Haimhausen Kemmer | Halbleiterelement |
| US4729005A (en) * | 1985-04-29 | 1988-03-01 | General Electric Company | Method and apparatus for improved metal-insulator-semiconductor device operation |
| US6037595A (en) * | 1995-10-13 | 2000-03-14 | Digirad Corporation | Radiation detector with shielding electrode |
| AU1474200A (en) * | 1998-11-09 | 2000-05-29 | Jan S Iwanczyk | Gamma-ray detector employing scintillators coupled to semiconductor drift photodetectors |
| US6455858B1 (en) * | 2000-08-13 | 2002-09-24 | Photon Imaging, Inc. | Semiconductor radiation detector |
| US6541836B2 (en) * | 2001-02-21 | 2003-04-01 | Photon Imaging, Inc. | Semiconductor radiation detector with internal gain |
-
2002
- 2002-03-27 DE DE10213812A patent/DE10213812B4/de not_active Expired - Fee Related
-
2003
- 2003-03-27 AT AT03714890T patent/ATE401668T1/de not_active IP Right Cessation
- 2003-03-27 US US10/509,320 patent/US7238949B2/en not_active Expired - Lifetime
- 2003-03-27 AU AU2003219104A patent/AU2003219104A1/en not_active Abandoned
- 2003-03-27 EP EP03714890A patent/EP1490911B1/de not_active Expired - Lifetime
- 2003-03-27 WO PCT/EP2003/003209 patent/WO2003081637A2/de active IP Right Grant
- 2003-03-27 DE DE50310157T patent/DE50310157D1/de not_active Expired - Lifetime
- 2003-11-26 NO NO20035244A patent/NO20035244D0/no not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| US7238949B2 (en) | 2007-07-03 |
| DE10213812B4 (de) | 2007-03-29 |
| ATE401668T1 (de) | 2008-08-15 |
| US20050173733A1 (en) | 2005-08-11 |
| DE10213812A1 (de) | 2003-10-23 |
| NO20035244D0 (no) | 2003-11-26 |
| AU2003219104A1 (en) | 2003-10-08 |
| DE50310157D1 (de) | 2008-08-28 |
| EP1490911B1 (de) | 2008-07-16 |
| EP1490911A2 (de) | 2004-12-29 |
| AU2003219104A8 (en) | 2003-10-08 |
| WO2003081637A2 (de) | 2003-10-02 |
| WO2003081637A3 (de) | 2003-12-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FC2A | Withdrawal, rejection or dismissal of laid open patent application |