NO123438B - - Google Patents

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Publication number
NO123438B
NO123438B NO481168A NO481168A NO123438B NO 123438 B NO123438 B NO 123438B NO 481168 A NO481168 A NO 481168A NO 481168 A NO481168 A NO 481168A NO 123438 B NO123438 B NO 123438B
Authority
NO
Norway
Prior art keywords
plate
attached
cardboard
grooves
filler
Prior art date
Application number
NO481168A
Other languages
Norwegian (no)
Inventor
I Kobayashi
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of NO123438B publication Critical patent/NO123438B/no

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors

Description

Isolerende bygningsplate og framgangsmåte til dens framstilling. Insulating building board and method of its production.

Foreliggende oppfinnelse omfatter en The present invention comprises a

godt isolerende bygningsplate som skal anvendes som innvendige vegg- og takenheter well-insulating building board to be used as internal wall and ceiling units

på mur- og betongvegger og liknende, og on brick and concrete walls and the like, and

framgangsmåte til platens framstilling. procedure for the plate's production.

Oppfinnelsen består i at bygningspla-ten framstilles av to deler, den ene del er The invention consists in the fact that the building board is produced from two parts, one part is

en papp-plate hvor der i lengderetningen er a cardboard sheet where there is in the longitudinal direction

festet noen parallelle trelekter i passe inn-byrdes avstand, og den annen del framstilles av et lett fyllstoff som pappmasje attached some parallel wooden laths at a suitable distance from each other, and the other part is made from a light filler such as cardboard mesh

eller liknende, som blir pressformet slik at or similar, which is press-formed so that

der dannes kanaler eller rom i fyllstoffplatens lengderetning, for lektene på den annen platedel. Fyllstoffplaten har også noen channels or spaces are formed in the longitudinal direction of the filler plate, for the laths on the other plate part. The filler plate also has some

ribbeliknende parallelle forhøyninger i rib-like parallel elevations i

tverretningen. Disse to platedelene blir så the transverse direction. These two plate parts become so

presset sammen ved hjelp av herdbart pressed together using curable

bindemiddel. På fyllstoffplatens overflate binder. On the surface of the filler plate

limes så kartong eller treplate. På den fer-dige bygningsplates overflate er nedfreset cardboard or wooden board is then glued. The surface of the finished building board is milled down

parallelle spor eller riller i passe dybde og parallel grooves or grooves of suitable depth and

avstand, slik at det papir eller tapet som distance, so that the paper or wallpaper that

skal klistres på denne side får et elastisk to be pasted on this side get an elastic

underlag når det tørker og strammes. substrate when it dries and tightens.

Oppfinnelsen er i det etterfølgende nær-mere beskrevet og framstilt på vedheftede In what follows, the invention is described in more detail and illustrated in the attached document

tegning, hvor fig. 1 viser en del av den drawing, where fig. 1 shows part of it

pressformete fyllstoffplaten, sett fra den press-formed filler plate, seen from it

ene sidekant. Fig. 2 viser samme, sett fra one side edge. Fig. 2 shows the same, seen from the side

endekanten. Fig. 3 viser en del av bygnings-platen sammensatt av de to delene, den the end edge. Fig. 3 shows a part of the building plate composed of the two parts, the

pressformete fyllstoffplaten (fig. 1 og 2), the press-formed filler plate (fig. 1 and 2),

og platen med lektene. Fig. 4 viser byg-ningsplaten i mindre målestokk, med pålimt and the plate with the battens. Fig. 4 shows the building board on a smaller scale, with the adhesive attached

kartong eller treplate, og med noen få ned-fresete spor eller riller i lengderetningen. cardboard or wooden board, and with a few down-milled grooves or grooves in the longitudinal direction.

Endelektene er forsynt med henholdsvis not The end battens are provided with a groove, respectively

og fjær for sammenføyning med andre and feathers for joining with others

plater. plates.

Under henvisning til tegningen betegner A den ene platedel med de langsgående With reference to the drawing, A denotes one plate part with the longitudinal ones

parallelle trelektene B. C betegner den annen platedel, bestående av pressformet parallel wooden slats B. C denotes the second panel part, consisting of pressed

pappmasje eller liknende fyllstoff, med ka-nalene D for lektene (B) og med de ribbeliknende parallelle forhøyninger E i platens cardboard mesh or similar filler, with the channels D for the battens (B) and with the rib-like parallel elevations E in the plate's

tverretning. F betegner de utskårne spor transverse direction. F denotes the cut grooves

eller riller i byggeplatens overflate G. or grooves in the building plate's surface G.

Claims (1)

Sammensatt isolerende bygningsplate,Composite insulating building board, som skal anvendes som innvendige vegg- og takenheter på mur- og betongvegger og liknende, karakterisert ved at den består av en bunnplate (A) som basis, og med av-stivende trelekter (B) festet til denne, samt et annet plateorgan (C), som er festet til platen (A) ved hjelp av et herdbart bindemiddel, hvilket plateorgan (C) er framstilt av et lett fyllstoff som pappmasje eller liknende, som er pressformet slik at der dannes kanaler eller rom (D) for lektene (B) i fyllstoffplatens lengderetning, samt ribbeliknende parallelle forhøyninger (E) i tverretningen, slik at disses topper rager over bunnplatens lekter og danner et fjæ-rende leie for en kartongplate (G) eller liknende, som skal festes på toppene, og at det på denne plates ytre side er nedfreset i passe dybde og avstand noen parallelle spor eller riller (F).which are to be used as internal wall and ceiling units on brick and concrete walls and the like, characterized by the fact that it consists of a base plate (A) as a base, and with stiffening wooden battens (B) attached to this, as well as another plate member (C ), which is attached to the plate (A) by means of a hardenable binder, which plate member (C) is produced from a light filler such as cardboard mash or similar, which is press-formed so that channels or spaces (D) are formed for the laths (B) ) in the lengthwise direction of the filler plate, as well as rib-like parallel elevations (E) in the transverse direction, so that their tops protrude above the battens of the bottom plate and form a spring bearing for a cardboard plate (G) or similar, which is to be attached to the tops, and that on this the plate's outer side is milled down to the appropriate depth and distance some parallel grooves or grooves (F).
NO481168A 1967-12-05 1968-12-02 NO123438B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7803267 1967-12-05

Publications (1)

Publication Number Publication Date
NO123438B true NO123438B (en) 1971-11-15

Family

ID=13650454

Family Applications (1)

Application Number Title Priority Date Filing Date
NO481168A NO123438B (en) 1967-12-05 1968-12-02

Country Status (10)

Country Link
AT (1) AT309533B (en)
BE (1) BE724868A (en)
CA (1) CA930478A (en)
CH (1) CH481490A (en)
DE (1) DE1812178B2 (en)
FR (1) FR1601776A (en)
GB (1) GB1251348A (en)
NL (1) NL143735B (en)
NO (1) NO123438B (en)
SE (1) SE354546B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL166156C (en) * 1971-05-22 1981-06-15 Philips Nv SEMICONDUCTOR DEVICE CONTAINING AT LEAST ONE on a semiconductor substrate BODY MADE SEMICONDUCTOR LAYER WITH AT LEAST ONE ISOLATION ZONE WHICH ONE IN THE SEMICONDUCTOR LAYER COUNTERSUNk INSULATION FROM SHAPED INSULATING MATERIAL BY LOCAL THERMAL OXIDATION OF HALF OF THE SEMICONDUCTOR LAYER GUIDE MATERIALS CONTAIN AND METHOD FOR MANUFACTURING SAME.
US3861968A (en) * 1972-06-19 1975-01-21 Ibm Method of fabricating integrated circuit device structure with complementary elements utilizing selective thermal oxidation and selective epitaxial deposition

Also Published As

Publication number Publication date
BE724868A (en) 1969-05-16
NL143735B (en) 1974-10-15
CA930478A (en) 1973-07-17
DE1812178A1 (en) 1969-07-10
SE354546B (en) 1973-03-12
DE1812178B2 (en) 1978-11-09
CH481490A (en) 1969-11-15
FR1601776A (en) 1970-09-14
NL6817313A (en) 1969-06-09
AT309533B (en) 1973-08-27
GB1251348A (en) 1971-10-27

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