NO123294B - - Google Patents
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- Publication number
- NO123294B NO123294B NO3553/68A NO355368A NO123294B NO 123294 B NO123294 B NO 123294B NO 3553/68 A NO3553/68 A NO 3553/68A NO 355368 A NO355368 A NO 355368A NO 123294 B NO123294 B NO 123294B
- Authority
- NO
- Norway
- Prior art keywords
- area
- layer
- metal layer
- semiconductor device
- conductivity type
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 claims description 54
- 239000002184 metal Substances 0.000 claims description 54
- 239000004065 semiconductor Substances 0.000 claims description 31
- 230000004888 barrier function Effects 0.000 claims description 24
- 238000009413 insulation Methods 0.000 claims description 16
- 239000002800 charge carrier Substances 0.000 claims description 4
- 230000006641 stabilisation Effects 0.000 description 13
- 238000011105 stabilization Methods 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6712435.A NL158027B (nl) | 1967-09-12 | 1967-09-12 | Gestabiliseerde planaire halfgeleiderinrichting met een hoog gedoteerde oppervlaktezone. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO123294B true NO123294B (xx) | 1971-10-25 |
Family
ID=19801167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO3553/68A NO123294B (xx) | 1967-09-12 | 1968-09-09 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US3544861A (xx) |
| AT (1) | AT307503B (xx) |
| BE (1) | BE720637A (xx) |
| CH (1) | CH502696A (xx) |
| DK (1) | DK119169B (xx) |
| ES (1) | ES357987A1 (xx) |
| FR (1) | FR1580661A (xx) |
| GB (1) | GB1238876A (xx) |
| NL (1) | NL158027B (xx) |
| NO (1) | NO123294B (xx) |
| SE (1) | SE351942B (xx) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3911473A (en) * | 1968-10-12 | 1975-10-07 | Philips Corp | Improved surface breakdown protection for semiconductor devices |
| US3836998A (en) * | 1969-01-16 | 1974-09-17 | Signetics Corp | High voltage bipolar semiconductor device and integrated circuit using the same and method |
| JPS5753944A (en) * | 1980-09-17 | 1982-03-31 | Hitachi Ltd | Semiconductor integrated circuit |
| US4446475A (en) * | 1981-07-10 | 1984-05-01 | Motorola, Inc. | Means and method for disabling access to a memory |
| NL8204105A (nl) * | 1982-10-25 | 1984-05-16 | Philips Nv | Halfgeleiderinrichting. |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE650116A (xx) * | 1963-07-05 | 1900-01-01 | ||
| US3325258A (en) * | 1963-11-27 | 1967-06-13 | Texas Instruments Inc | Multilayer resistors for hybrid integrated circuits |
| NL134388C (xx) * | 1964-05-15 | 1900-01-01 | ||
| US3474304A (en) * | 1968-01-03 | 1969-10-21 | Corning Glass Works | Monolithic thin-film devices with active and resistive regions |
-
1967
- 1967-09-12 NL NL6712435.A patent/NL158027B/xx not_active IP Right Cessation
-
1968
- 1968-09-03 US US756803A patent/US3544861A/en not_active Expired - Lifetime
- 1968-09-09 CH CH1346268A patent/CH502696A/de not_active IP Right Cessation
- 1968-09-09 NO NO3553/68A patent/NO123294B/no unknown
- 1968-09-09 DK DK432068AA patent/DK119169B/da unknown
- 1968-09-09 SE SE12097/68A patent/SE351942B/xx unknown
- 1968-09-09 GB GB1238876D patent/GB1238876A/en not_active Expired
- 1968-09-09 AT AT875768A patent/AT307503B/de not_active IP Right Cessation
- 1968-09-10 BE BE720637D patent/BE720637A/xx unknown
- 1968-09-10 ES ES357987A patent/ES357987A1/es not_active Expired
- 1968-09-11 FR FR1580661D patent/FR1580661A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL6712435A (xx) | 1969-03-14 |
| CH502696A (de) | 1971-01-31 |
| DK119169B (da) | 1970-11-23 |
| AT307503B (de) | 1973-05-25 |
| DE1764928B2 (de) | 1977-01-20 |
| DE1764928A1 (de) | 1971-12-02 |
| SE351942B (xx) | 1972-12-11 |
| FR1580661A (xx) | 1969-09-05 |
| GB1238876A (xx) | 1971-07-14 |
| ES357987A1 (es) | 1971-06-16 |
| BE720637A (xx) | 1969-03-10 |
| US3544861A (en) | 1970-12-01 |
| NL158027B (nl) | 1978-09-15 |
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