NO120280B - - Google Patents
Download PDFInfo
- Publication number
- NO120280B NO120280B NO17003767A NO17003767A NO120280B NO 120280 B NO120280 B NO 120280B NO 17003767 A NO17003767 A NO 17003767A NO 17003767 A NO17003767 A NO 17003767A NO 120280 B NO120280 B NO 120280B
- Authority
- NO
- Norway
- Prior art keywords
- manganese
- manganese dioxide
- manganese nitrate
- thermal decomposition
- nitrate
- Prior art date
Links
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 38
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 9
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N nitrous oxide Inorganic materials [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- -1 tintan Chemical compound 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0036—Formation of the solid electrolyte layer
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1966ST025971 DE1521518B2 (de) | 1966-10-12 | 1966-10-12 | Verfahren zur Herstellung von Schichten aus grauem Mangandioxid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO120280B true NO120280B (xx) | 1970-09-28 |
Family
ID=7460782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO17003767A NO120280B (xx) | 1966-10-12 | 1967-10-09 |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS5210840B1 (xx) |
| BE (1) | BE704987A (xx) |
| CH (1) | CH483496A (xx) |
| DE (1) | DE1521518B2 (xx) |
| DK (1) | DK118072B (xx) |
| LU (1) | LU54604A1 (xx) |
| NL (1) | NL152936B (xx) |
| NO (1) | NO120280B (xx) |
| SE (1) | SE331984B (xx) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63125741U (xx) * | 1987-02-09 | 1988-08-17 | ||
| JPS63165450U (xx) * | 1987-04-16 | 1988-10-27 | ||
| JP4755971B2 (ja) * | 2006-12-19 | 2011-08-24 | ホリストン ポリテック株式会社 | 固体電解コンデンサ用硝酸マンガンクローズドリサイクルシステム |
-
1966
- 1966-10-12 DE DE1966ST025971 patent/DE1521518B2/de active Granted
-
1967
- 1967-10-05 LU LU54604D patent/LU54604A1/xx unknown
- 1967-10-09 NO NO17003767A patent/NO120280B/no unknown
- 1967-10-10 SE SE1381467A patent/SE331984B/xx unknown
- 1967-10-11 JP JP42065021A patent/JPS5210840B1/ja active Pending
- 1967-10-11 NL NL6713770A patent/NL152936B/xx unknown
- 1967-10-11 CH CH1418167A patent/CH483496A/de not_active IP Right Cessation
- 1967-10-12 DK DK505867A patent/DK118072B/da not_active IP Right Cessation
- 1967-10-12 BE BE704987D patent/BE704987A/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE1521518B2 (de) | 1970-09-10 |
| LU54604A1 (xx) | 1967-12-05 |
| BE704987A (xx) | 1968-04-12 |
| DE1521518A1 (de) | 1969-07-24 |
| NL6713770A (xx) | 1968-04-16 |
| DK118072B (da) | 1970-07-06 |
| CH483496A (de) | 1969-12-31 |
| JPS5210840B1 (xx) | 1977-03-26 |
| NL152936B (nl) | 1977-04-15 |
| SE331984B (xx) | 1971-01-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Jaim et al. | Stability of the oxygen vacancy induced conductivity in BaSnO3 thin films on SrTiO3 | |
| Tabata et al. | Dielectric properties of strained (Sr, Ca) TiO 3/(Ba, Sr) TiO 3 artificial lattices | |
| Nino et al. | Correlation between infrared phonon modes and dielectric relaxation in Bi 2 O 3–ZnO–Nb 2 O 5 cubic pyrochlore | |
| Dong et al. | Improved dielectric tunability of PZT/BST multilayer thin films on Ti substrates | |
| NO120280B (xx) | ||
| Belghiti et al. | Ferroelectric and crystallographic properties of the Sr2− xK1+ xNb5O15− xFx solid solution | |
| Weiss et al. | Bulk-like dielectric properties from metallo-organic solution–deposited SrTiO3 films on Pt-coated Si substrates | |
| Chaudhari et al. | Structural and impedance spectroscopic studies on PbZrxTi1− xO3 ceramics | |
| Das et al. | Impedance spectroscopy analysis of (Pb0. 93Gd0. 07)(Sn0. 45Ti0. 55) 0.9825O3 ferroelectrics | |
| WO2001093288A2 (en) | Thermal treatment process for valve metal nitride electrolytic capacitors having manganese oxide cathodes | |
| Heidrich et al. | Optical properties and electronic structure of simple cubic and fcc T1I | |
| WO2019023307A1 (en) | INCREASING THE OPERATING TEMPERATURE OF BOPP-BASED CAPACITORS BY FLUORATING A FILM | |
| Reséndiz-Muñoz et al. | Stoichiometry calculation in Ba x Sr 1− x TiO 3 solid solution thin films, prepared by RF cosputtering, using X-Ray diffraction peak positions and Boltzmann sigmoidal modelling | |
| Balasundaram et al. | Structure, dielectric, and AC conduction properties of amorphous germanium thin films | |
| US3499782A (en) | Substrate protective oxidized coating process | |
| Yan et al. | Effect of in situ Ion NitrideTreatment on the Corrosion Behavior of Titanium | |
| Ochi et al. | Electron–Ion Mixed Conduction of BaCe0. 90Y0. 10O3− δ Thin Film Generated by Ru Substitution | |
| Pham et al. | Preparation and Microstructure of Acetate-based Lead-free BSZT Ferroelectric Thin Films Using Sol-gel Technique | |
| US3401054A (en) | Formation of coatings on germanium bodies | |
| Chethan et al. | Polypyrrole/magnesium oxide composite as room temperature operable humidity sensor | |
| EP1195799A1 (en) | High pressure process for the formation of crystallized ceramic films at low temperatures | |
| KR940008025B1 (ko) | 수직 mocvd법을 이용한 pzt 박막 제조방법 | |
| Jaita et al. | Excellent dielectric constants observed in heterogeneous conduction Ba (Zr 0.25 Ti 0.75) O 3 ceramics doped with Sr (Fe 0.5 Nb 0.5) O 3 | |
| Takada et al. | Surface Electron–Ion Mixed Conduction of BaTiO3− δ Thin Film with Oxygen Vacancies | |
| Gibbons et al. | Structure, processing, and property relationships in tunable rf and microwave devices |