NO120280B - - Google Patents
Download PDFInfo
- Publication number
- NO120280B NO120280B NO17003767A NO17003767A NO120280B NO 120280 B NO120280 B NO 120280B NO 17003767 A NO17003767 A NO 17003767A NO 17003767 A NO17003767 A NO 17003767A NO 120280 B NO120280 B NO 120280B
- Authority
- NO
- Norway
- Prior art keywords
- manganese
- manganese dioxide
- manganese nitrate
- thermal decomposition
- nitrate
- Prior art date
Links
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 38
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 9
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N nitrous oxide Inorganic materials [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- -1 tintan Chemical compound 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0036—Formation of the solid electrolyte layer
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
Fremgangsmåte for fremstilling av belegg Procedure for the production of coatings
av grått mangan-dioksyd.of gray manganese dioxide.
Foreliggende oppfinnelse angår en fremgangsmåte for fremstilling av belegg av grått mangandioksyd ved termisk dekomponering av mangan-nitrat• The present invention relates to a method for producing a coating of gray manganese dioxide by thermal decomposition of manganese nitrate•
Det er tidligere kjent å fremstille belegg av mangan-dioksyd ved termisk dekomponering av mangan-nitrat. Mangan-nitrat benyttes for dette formål ofte i en fortynnet oppløsning, og påføres grunn-platen, som skal belegges, ved dypping eller lignende. Deretter oppnår man en termisk dekomponering av mangan-nitratet ved oppvarming. Under denne prosessen omformes mangan-nitrat til mangan-dioksyd. Samtidig frigjøres vann og nitrogenoksyder (nitrøse gasser). It is previously known to produce coatings of manganese dioxide by thermal decomposition of manganese nitrate. Manganese nitrate is often used for this purpose in a diluted solution, and is applied to the base plate, which is to be coated, by dipping or the like. A thermal decomposition of the manganese nitrate is then achieved by heating. During this process, manganese nitrate is transformed into manganese dioxide. At the same time, water and nitrogen oxides (nitrous gases) are released.
Slike belegg av mangan-dioksyd fremstilles hovedsakelig påSuch coatings of manganese dioxide are produced mainly on
grunn av deres elektriske egenskaper. Det er bl.a. kjent å anbringe et lag mangan-dioksyd på oksydbelegget i såkalte "tørre elektrolytt, kondensatorer", hvor oksydbelegget er dannet på overflaten til et såkalt "ventilmetall". Ventilmetaller er metaller som lett kan belegges med et oksydbelegg av samme materiale, og hvor dette beleg-get oppviser en kraftig adhesjon til metallet og samtidig har en høy dielektrisitetskonstant. due to their electrical properties. It is, among other things, known to place a layer of manganese dioxide on the oxide coating in so-called "dry electrolyte, capacitors", where the oxide coating is formed on the surface of a so-called "valve metal". Valve metals are metals that can easily be coated with an oxide coating of the same material, and where this coating exhibits strong adhesion to the metal and at the same time has a high dielectric constant.
Til de mest vanlige ventilmetaller hører aluminium, tantal, tintan, zirkonium, niob, hafnium og wolfram. The most common valve metals include aluminium, tantalum, tintan, zirconium, niobium, hafnium and tungsten.
Imidlertid finner også lag av mangan-dioksyd stor anvendelse innen elektroteknikken, f.eks. i primærelementer. However, layers of manganese dioxide are also widely used in electrical engineering, e.g. in primary elements.
Innen disse områder er det nødvendig å fremstille mangan-dioksyd på en slik måte at man ikke bare oppnår fordelaktige elektriske egenskaper, som f.eks. en lav spesifikk motstand, men dessuten får gcde mekaniske egenskaper, som f.eks. en god adhesjon til grunnflaten. Within these areas, it is necessary to produce manganese dioxide in such a way that one not only achieves advantageous electrical properties, such as e.g. a low specific resistance, but also gcde gets mechanical properties, such as e.g. a good adhesion to the base surface.
Når man produserer mangan-dioksyd ved en termisk dekomponeringWhen manganese dioxide is produced by thermal decomposition
av mangan-nitrat, fåe mangan-dioksydet i en sort, brun eller grå tilstand. Mens lagene med den sorte og den brune tilstanden for mangan-dioksyd ikke oppnår tilstrekkelig god adhesjon til sitt underlag, og dessuten har en relativt høy elektrisk motstand ved siden av at de er vanskelige å reprodusere, utmerker den grå tilstanden for mangan-dioksyd seg ved at den er reproduserbar, at den har en god adhesjons-evne og at man får godt ledende lag på svært mange forskjellige underlagsmaterialer, slik som glass, keramikk, metaller og sintrede legemer. Imidlertid har man foreløbig ikke vært i stand til å danne den grå tilstanden av mangan-dioksyd på en reproduserbar måte ved termisk dekomponering av mangan-nitrat. of manganese nitrate, obtaining the manganese dioxide in a black, brown or gray state. While the layers with the black and brown state of manganese dioxide do not achieve sufficiently good adhesion to their substrate, and furthermore have a relatively high electrical resistance in addition to being difficult to reproduce, the gray state of manganese dioxide excels at that it is reproducible, that it has good adhesion and that you get good conductive layers on many different substrate materials, such as glass, ceramics, metals and sintered bodies. However, it has not yet been possible to reproducibly form the gray state of manganese dioxide by thermal decomposition of manganese nitrate.
Foreliggende oppfinnelse angir en fremgangsmåte til å produsere lag av mangan-dioksyd ved termisk dekomponering av mangan-nitrat, The present invention specifies a method for producing layers of manganese dioxide by thermal decomposition of manganese nitrate,
ved hvilken måte man alltid oppnår den grå tilstanden av mangan-nitratet, hvilken tilstand som nevnt er særpreget ved sine gode mekaniske og elektriske egenskaper. by which method the gray state of the manganese nitrate is always obtained, which state, as mentioned, is characterized by its good mechanical and electrical properties.
Fremgangsmåten man ifølge oppfinnelsen benytter for å oppnåThe method according to the invention is used to achieve
dette er nærmere angitt i de fremsatte krav.this is specified in more detail in the claims made.
På grunn av det høye vanndampinnholdet i atmosfæren under dekomponeringen, blir utviklingen av nitrøse gasser på den ene siden, og fordampningen av krystallisasjonsvannet på den annen side påviselig redusert. Derved reguleres dekomponeringen av mangan-nitrat på en slik måte at man får mangan-dioksyd i form av et lag med sølvgrå, skjellformede krystaller. Due to the high water vapor content in the atmosphere during the decomposition, the evolution of nitrous gases on the one hand, and the evaporation of the water of crystallization on the other hand, is demonstrably reduced. Thereby, the decomposition of manganese nitrate is regulated in such a way that manganese dioxide is obtained in the form of a layer of silver-grey, shell-shaped crystals.
Atmosfæren' hvor den termiske dekomponeringen av mangan-nitratet utføres, må inneholde minst 60% fuktighet, men fuktigheten kan også beløpe seg opptil 100%. The atmosphere in which the thermal decomposition of the manganese nitrate is carried out must contain at least 60% humidity, but the humidity can also amount to up to 100%.
Ved fremgangsmåten i henhold til foreliggende oppfinnelse kan det fremstilles lag med grått mangan-dioksyd som er særlig fordel-aktig for anvendelse i elektriske kondensatorer hvor ett lag mangan-dioksyd anbringes på det dielektriske dioksydlag på overflaten til et legeme av ventilmetall• Legemet av ventilmetall kan ha en vilkår-lig form, f.eks. form av en profilert metallstav, et folie eller et sintret legeme. With the method according to the present invention, a layer of gray manganese dioxide can be produced which is particularly advantageous for use in electric capacitors where a layer of manganese dioxide is placed on the dielectric dioxide layer on the surface of a body of valve metal• The body of valve metal can have a conditional form, e.g. form of a profiled metal rod, a foil or a sintered body.
Claims (2)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1966ST025971 DE1521518B2 (en) | 1966-10-12 | 1966-10-12 | Process for the production of layers from gray manganese dioxide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO120280B true NO120280B (en) | 1970-09-28 |
Family
ID=7460782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO17003767A NO120280B (en) | 1966-10-12 | 1967-10-09 |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS5210840B1 (en) |
| BE (1) | BE704987A (en) |
| CH (1) | CH483496A (en) |
| DE (1) | DE1521518B2 (en) |
| DK (1) | DK118072B (en) |
| LU (1) | LU54604A1 (en) |
| NL (1) | NL152936B (en) |
| NO (1) | NO120280B (en) |
| SE (1) | SE331984B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63125741U (en) * | 1987-02-09 | 1988-08-17 | ||
| JPS63165450U (en) * | 1987-04-16 | 1988-10-27 | ||
| JP4755971B2 (en) * | 2006-12-19 | 2011-08-24 | ホリストン ポリテック株式会社 | Manganese nitrate closed recycling system for solid electrolytic capacitors |
-
1966
- 1966-10-12 DE DE1966ST025971 patent/DE1521518B2/en active Granted
-
1967
- 1967-10-05 LU LU54604D patent/LU54604A1/xx unknown
- 1967-10-09 NO NO17003767A patent/NO120280B/no unknown
- 1967-10-10 SE SE1381467A patent/SE331984B/xx unknown
- 1967-10-11 JP JP42065021A patent/JPS5210840B1/ja active Pending
- 1967-10-11 NL NL6713770A patent/NL152936B/en unknown
- 1967-10-11 CH CH1418167A patent/CH483496A/en not_active IP Right Cessation
- 1967-10-12 DK DK505867A patent/DK118072B/en not_active IP Right Cessation
- 1967-10-12 BE BE704987D patent/BE704987A/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE1521518B2 (en) | 1970-09-10 |
| LU54604A1 (en) | 1967-12-05 |
| BE704987A (en) | 1968-04-12 |
| DE1521518A1 (en) | 1969-07-24 |
| NL6713770A (en) | 1968-04-16 |
| DK118072B (en) | 1970-07-06 |
| CH483496A (en) | 1969-12-31 |
| JPS5210840B1 (en) | 1977-03-26 |
| NL152936B (en) | 1977-04-15 |
| SE331984B (en) | 1971-01-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Jaim et al. | Stability of the oxygen vacancy induced conductivity in BaSnO3 thin films on SrTiO3 | |
| Tabata et al. | Dielectric properties of strained (Sr, Ca) TiO 3/(Ba, Sr) TiO 3 artificial lattices | |
| Nino et al. | Correlation between infrared phonon modes and dielectric relaxation in Bi 2 O 3–ZnO–Nb 2 O 5 cubic pyrochlore | |
| Dong et al. | Improved dielectric tunability of PZT/BST multilayer thin films on Ti substrates | |
| NO120280B (en) | ||
| Belghiti et al. | Ferroelectric and crystallographic properties of the Sr2− xK1+ xNb5O15− xFx solid solution | |
| Weiss et al. | Bulk-like dielectric properties from metallo-organic solution–deposited SrTiO3 films on Pt-coated Si substrates | |
| Chaudhari et al. | Structural and impedance spectroscopic studies on PbZrxTi1− xO3 ceramics | |
| Das et al. | Impedance spectroscopy analysis of (Pb0. 93Gd0. 07)(Sn0. 45Ti0. 55) 0.9825O3 ferroelectrics | |
| WO2001093288A2 (en) | Thermal treatment process for valve metal nitride electrolytic capacitors having manganese oxide cathodes | |
| Heidrich et al. | Optical properties and electronic structure of simple cubic and fcc T1I | |
| WO2019023307A1 (en) | Increased operational temperature of bopp based capacitors by fluorination of film | |
| Reséndiz-Muñoz et al. | Stoichiometry calculation in Ba x Sr 1− x TiO 3 solid solution thin films, prepared by RF cosputtering, using X-Ray diffraction peak positions and Boltzmann sigmoidal modelling | |
| Balasundaram et al. | Structure, dielectric, and AC conduction properties of amorphous germanium thin films | |
| US3499782A (en) | Substrate protective oxidized coating process | |
| Yan et al. | Effect of in situ Ion NitrideTreatment on the Corrosion Behavior of Titanium | |
| Ochi et al. | Electron–Ion Mixed Conduction of BaCe0. 90Y0. 10O3− δ Thin Film Generated by Ru Substitution | |
| Pham et al. | Preparation and Microstructure of Acetate-based Lead-free BSZT Ferroelectric Thin Films Using Sol-gel Technique | |
| US3401054A (en) | Formation of coatings on germanium bodies | |
| Chethan et al. | Polypyrrole/magnesium oxide composite as room temperature operable humidity sensor | |
| EP1195799A1 (en) | High pressure process for the formation of crystallized ceramic films at low temperatures | |
| KR940008025B1 (en) | Pzt thin film manufacturing method using vertical mocvd method | |
| Jaita et al. | Excellent dielectric constants observed in heterogeneous conduction Ba (Zr 0.25 Ti 0.75) O 3 ceramics doped with Sr (Fe 0.5 Nb 0.5) O 3 | |
| Takada et al. | Surface Electron–Ion Mixed Conduction of BaTiO3− δ Thin Film with Oxygen Vacancies | |
| Gibbons et al. | Structure, processing, and property relationships in tunable rf and microwave devices |