NO116431B - - Google Patents
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- Publication number
- NO116431B NO116431B NO152483A NO15248364A NO116431B NO 116431 B NO116431 B NO 116431B NO 152483 A NO152483 A NO 152483A NO 15248364 A NO15248364 A NO 15248364A NO 116431 B NO116431 B NO 116431B
- Authority
- NO
- Norway
- Prior art keywords
- layer
- base
- alloyed
- regeneration
- active
- Prior art date
Links
- 229910045601 alloy Inorganic materials 0.000 claims description 27
- 239000000956 alloy Substances 0.000 claims description 27
- 238000009792 diffusion process Methods 0.000 claims description 22
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 20
- 229910052732 germanium Inorganic materials 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 18
- 229910052787 antimony Inorganic materials 0.000 claims description 15
- 230000008929 regeneration Effects 0.000 claims description 15
- 238000011069 regeneration method Methods 0.000 claims description 15
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 12
- 238000011084 recovery Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- 238000011109 contamination Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000005204 segregation Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims description 2
- 239000000356 contaminant Substances 0.000 claims 3
- 238000000034 method Methods 0.000 description 15
- 238000005275 alloying Methods 0.000 description 14
- 238000005530 etching Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- 238000004804 winding Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002775 capsule Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000000866 electrolytic etching Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000003344 environmental pollutant Substances 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 231100000719 pollutant Toxicity 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910002065 alloy metal Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000013100 final test Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 150000002258 gallium Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000010902 straw Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/035—Diffusion through a layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US267220A US3309244A (en) | 1963-03-22 | 1963-03-22 | Alloy-diffused method for producing semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO116431B true NO116431B (US20080293856A1-20081127-C00150.png) | 1969-03-24 |
Family
ID=23017838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO152483A NO116431B (US20080293856A1-20081127-C00150.png) | 1963-03-22 | 1964-03-17 |
Country Status (9)
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3577045A (en) * | 1968-09-18 | 1971-05-04 | Gen Electric | High emitter efficiency simiconductor device with low base resistance and by selective diffusion of base impurities |
| US3905844A (en) * | 1971-06-15 | 1975-09-16 | Matsushita Electric Ind Co Ltd | Method of making a PN junction device by metal dot alloying and recrystallization |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB807995A (en) * | 1955-09-02 | 1959-01-28 | Gen Electric Co Ltd | Improvements in or relating to the production of semiconductor bodies |
| US2943006A (en) * | 1957-05-06 | 1960-06-28 | Westinghouse Electric Corp | Diffused transistors and processes for making the same |
| NL257150A (US20080293856A1-20081127-C00150.png) * | 1960-10-22 | 1900-01-01 | ||
| US3211594A (en) * | 1961-12-19 | 1965-10-12 | Hughes Aircraft Co | Semiconductor device manufacture |
-
1963
- 1963-03-22 US US267220A patent/US3309244A/en not_active Expired - Lifetime
-
1964
- 1964-03-12 GB GB10546/64A patent/GB995527A/en not_active Expired
- 1964-03-13 NL NL6402683A patent/NL6402683A/xx unknown
- 1964-03-16 BE BE645252D patent/BE645252A/xx unknown
- 1964-03-17 NO NO152483A patent/NO116431B/no unknown
- 1964-03-18 FR FR967809A patent/FR1397401A/fr not_active Expired
- 1964-03-18 DK DK137664AA patent/DK117363B/da unknown
- 1964-03-21 JP JP39015303A patent/JPS4911033B1/ja active Pending
- 1964-03-23 DE DEM47770U patent/DE1935088U/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| BE645252A (US20080293856A1-20081127-C00150.png) | 1964-07-16 |
| JPS4911033B1 (US20080293856A1-20081127-C00150.png) | 1974-03-14 |
| DK117363B (da) | 1970-04-20 |
| US3309244A (en) | 1967-03-14 |
| DE1935088U (de) | 1966-03-24 |
| NL6402683A (US20080293856A1-20081127-C00150.png) | 1964-09-23 |
| FR1397401A (fr) | 1965-04-30 |
| GB995527A (en) | 1965-06-16 |
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