NL92960C - - Google Patents

Info

Publication number
NL92960C
NL92960C NL92960DA NL92960C NL 92960 C NL92960 C NL 92960C NL 92960D A NL92960D A NL 92960DA NL 92960 C NL92960 C NL 92960C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Application granted granted Critical
Publication of NL92960C publication Critical patent/NL92960C/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/08—Preparation of the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/103—Conversion of the selenium or tellurium to the conductive state
NL92960D 1955-02-07 NL92960C (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEL21081A DE1101625B (de) 1955-02-07 1955-02-07 Verfahren zum Herstellen von Selengleichrichtern

Publications (1)

Publication Number Publication Date
NL92960C true NL92960C (de) 1900-01-01

Family

ID=7261952

Family Applications (2)

Application Number Title Priority Date Filing Date
NL203974D NL203974A (de) 1955-02-07
NL92960D NL92960C (de) 1955-02-07

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL203974D NL203974A (de) 1955-02-07

Country Status (5)

Country Link
US (1) US2806984A (de)
DE (1) DE1101625B (de)
FR (1) FR1152585A (de)
GB (1) GB809080A (de)
NL (2) NL92960C (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3212917A (en) * 1962-01-03 1965-10-19 Ibm Electroless plating procedure
US3439240A (en) * 1966-07-29 1969-04-15 Int Rectifier Corp Selenium rectifier
GB1435537A (en) * 1973-06-19 1976-05-12 Standard Telephones Cables Ltd Rectifier
FR2996822B1 (fr) 2012-10-12 2015-07-31 Inst Superieur De L Aeronautique Et De L Espace Drone tele-opere comportant un moyen de fixation a une surface

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE519161C (de) * 1927-12-06 1931-02-25 Ernst Presser Wechselstrom-Gleichrichter mit zwischen zwei Elektroden angeordnetem Gleichrichtermaterial
CH200171A (de) * 1937-02-08 1938-09-30 Sueddeutsche Apparate Fabrik G Selen-Metall-Gleichrichtereinheit.
DE916085C (de) * 1937-11-01 1954-08-02 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern
DE742935C (de) * 1939-07-01 1943-12-15 Siemens Ag Elektrischer Halbleiter aus Selen, insbesondere fuer Trockengleichrichter
US2334554A (en) * 1942-06-22 1943-11-16 Gen Electric Method of producing blocking layer devices
BE485774A (de) * 1947-11-29 1900-01-01

Also Published As

Publication number Publication date
DE1101625B (de) 1961-03-09
GB809080A (en) 1959-02-18
US2806984A (en) 1957-09-17
FR1152585A (fr) 1958-02-20
NL203974A (de) 1900-01-01

Similar Documents

Publication Publication Date Title
AT2650B (de)
AT1395B (de)
DE1933810U (de)
DE7735867U1 (de)
AT13658B (de)
AT5260B (de)
AT14123B (de)
AT12270B (de)
AT11438B (de)
AT10964B (de)
AT10998B (de)
AT2192B (de)
AT18154B (de)
AT13734B (de)
AT2848B (de)
AT11763B (de)
AT2801B (de)
AT2794B (de)
AT11979B (de)
AT14095B (de)
AT11854B (de)
AT11564B (de)
AT11994B (de)
AT11747B (de)
AT14239B (de)