NL85899C - - Google Patents

Info

Publication number
NL85899C
NL85899C NL85899DA NL85899C NL 85899 C NL85899 C NL 85899C NL 85899D A NL85899D A NL 85899DA NL 85899 C NL85899 C NL 85899C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL85899C publication Critical patent/NL85899C/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/041Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Die Bonding (AREA)
NL85899D 1950-10-06 NL85899C (ru)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB24474/50A GB683248A (en) 1950-10-06 1950-10-06 Improvements in or relating to the manufacture of crystal contact devices

Publications (1)

Publication Number Publication Date
NL85899C true NL85899C (ru)

Family

ID=10212259

Family Applications (2)

Application Number Title Priority Date Filing Date
NL7202527.A NL164481B (nl) 1950-10-06 Werkwijze voor het vervaardigen van een selectief permeabel membraanelement en inrichting ten gebruike bij de vervaardiging daarvan.
NL85899D NL85899C (ru) 1950-10-06

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL7202527.A NL164481B (nl) 1950-10-06 Werkwijze voor het vervaardigen van een selectief permeabel membraanelement en inrichting ten gebruike bij de vervaardiging daarvan.

Country Status (5)

Country Link
US (1) US2723370A (ru)
DE (1) DE865489C (ru)
FR (1) FR1042521A (ru)
GB (1) GB683248A (ru)
NL (2) NL85899C (ru)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL172085B (nl) * 1952-08-27 Udylite Corp Werkwijze ter bereiding van een bad voor het elektrolytisch afzetten van ductiel, glanzend koper, en toepassing van het aldus bereide bad voor het elektrolytisch afzetten van een ductiele, glanzende koperlaag op een substraat.
US2891202A (en) * 1954-12-24 1959-06-16 Bendix Aviat Corp Semiconductor device
US2866929A (en) * 1955-12-01 1958-12-30 Hughes Aircraft Co Junction-type-semiconductor devices and method of making the same
US2935386A (en) * 1956-01-03 1960-05-03 Clevite Corp Method of producing small semiconductor silicon crystals
DE1084840B (de) * 1957-01-23 1960-07-07 Intermetall Verfahren zur Herstellung von kugelfoermigen Halbleiterkoerpern aus Silizium von Halbleiteranordnungen, z. B. Spitzen-Gleichrichtern oder Spitzen-Transistoren
US2815474A (en) * 1957-01-25 1957-12-03 Pacific Semiconductors Inc Glass sealed semiconductor rectifier
DE1230912B (de) * 1960-06-09 1966-12-22 Siemens Ag Verfahren zum Herstellen einer Halbleiteranordnung
NL274757A (ru) * 1961-02-15 1900-01-01

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2419561A (en) * 1941-08-20 1947-04-29 Gen Electric Co Ltd Crystal contact of which one element is mainly silicon
NL70486C (ru) * 1945-12-29
NL143116C (ru) * 1947-11-03

Also Published As

Publication number Publication date
US2723370A (en) 1955-11-08
NL164481B (nl)
DE865489C (de) 1953-02-02
FR1042521A (fr) 1953-11-02
GB683248A (en) 1952-11-26

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