NL7905702A - Capaciteitsdiode. - Google Patents
Capaciteitsdiode. Download PDFInfo
- Publication number
- NL7905702A NL7905702A NL7905702A NL7905702A NL7905702A NL 7905702 A NL7905702 A NL 7905702A NL 7905702 A NL7905702 A NL 7905702A NL 7905702 A NL7905702 A NL 7905702A NL 7905702 A NL7905702 A NL 7905702A
- Authority
- NL
- Netherlands
- Prior art keywords
- zone
- junction
- capacitance diode
- diode
- diffusion
- Prior art date
Links
- 238000009792 diffusion process Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2833318A DE2833318C2 (de) | 1978-07-29 | 1978-07-29 | Kapazitätsdiode |
DE2833318 | 1978-07-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7905702A true NL7905702A (nl) | 1980-01-31 |
Family
ID=6045691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7905702A NL7905702A (nl) | 1978-07-29 | 1979-07-24 | Capaciteitsdiode. |
Country Status (8)
Country | Link |
---|---|
US (1) | US4250514A (it) |
JP (1) | JPS5522895A (it) |
CA (1) | CA1130470A (it) |
DE (1) | DE2833318C2 (it) |
FR (1) | FR2435130A1 (it) |
GB (1) | GB2026770B (it) |
IT (1) | IT1123478B (it) |
NL (1) | NL7905702A (it) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3028820A1 (de) * | 1980-07-30 | 1982-02-25 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Kapazitaetsvariationsdiode |
US4381952A (en) * | 1981-05-11 | 1983-05-03 | Rca Corporation | Method for fabricating a low loss varactor diode |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA797439A (en) * | 1968-10-22 | Fujitsu Limited | Variable capacity diode | |
DE2104752B2 (de) * | 1971-02-02 | 1975-02-20 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Verfahren zum Herstellen einer Halbleiter-Kapazitätsdiode |
US3906539A (en) * | 1971-09-22 | 1975-09-16 | Philips Corp | Capacitance diode having a large capacitance ratio |
US4106953A (en) * | 1976-12-28 | 1978-08-15 | Motorola, Inc. | Method of producing an ion implanted tuning diode |
-
1978
- 1978-07-29 DE DE2833318A patent/DE2833318C2/de not_active Expired
-
1979
- 1979-07-23 US US06/059,828 patent/US4250514A/en not_active Expired - Lifetime
- 1979-07-24 NL NL7905702A patent/NL7905702A/nl not_active Application Discontinuation
- 1979-07-26 GB GB7926114A patent/GB2026770B/en not_active Expired
- 1979-07-26 IT IT24705/79A patent/IT1123478B/it active
- 1979-07-26 CA CA332,581A patent/CA1130470A/en not_active Expired
- 1979-07-26 FR FR7919299A patent/FR2435130A1/fr active Granted
- 1979-07-28 JP JP9664979A patent/JPS5522895A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
GB2026770B (en) | 1983-01-06 |
FR2435130B1 (it) | 1982-02-05 |
DE2833318A1 (de) | 1980-02-07 |
JPS5522895A (en) | 1980-02-18 |
FR2435130A1 (fr) | 1980-03-28 |
IT7924705A0 (it) | 1979-07-26 |
US4250514A (en) | 1981-02-10 |
JPH0137859B2 (it) | 1989-08-09 |
IT1123478B (it) | 1986-04-30 |
DE2833318C2 (de) | 1983-03-10 |
GB2026770A (en) | 1980-02-06 |
CA1130470A (en) | 1982-08-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1A | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
BI | The patent application has been withdrawn |