JPS5522895A - Variable capacitance diode - Google Patents

Variable capacitance diode

Info

Publication number
JPS5522895A
JPS5522895A JP9664979A JP9664979A JPS5522895A JP S5522895 A JPS5522895 A JP S5522895A JP 9664979 A JP9664979 A JP 9664979A JP 9664979 A JP9664979 A JP 9664979A JP S5522895 A JPS5522895 A JP S5522895A
Authority
JP
Japan
Prior art keywords
variable capacitance
capacitance diode
diode
variable
capacitance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9664979A
Other languages
English (en)
Other versions
JPH0137859B2 (ja
Inventor
Raabe Geruharuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS5522895A publication Critical patent/JPS5522895A/ja
Publication of JPH0137859B2 publication Critical patent/JPH0137859B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
JP9664979A 1978-07-29 1979-07-28 Variable capacitance diode Granted JPS5522895A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2833318A DE2833318C2 (de) 1978-07-29 1978-07-29 Kapazitätsdiode

Publications (2)

Publication Number Publication Date
JPS5522895A true JPS5522895A (en) 1980-02-18
JPH0137859B2 JPH0137859B2 (ja) 1989-08-09

Family

ID=6045691

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9664979A Granted JPS5522895A (en) 1978-07-29 1979-07-28 Variable capacitance diode

Country Status (8)

Country Link
US (1) US4250514A (ja)
JP (1) JPS5522895A (ja)
CA (1) CA1130470A (ja)
DE (1) DE2833318C2 (ja)
FR (1) FR2435130A1 (ja)
GB (1) GB2026770B (ja)
IT (1) IT1123478B (ja)
NL (1) NL7905702A (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3028820A1 (de) * 1980-07-30 1982-02-25 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Kapazitaetsvariationsdiode
US4381952A (en) * 1981-05-11 1983-05-03 Rca Corporation Method for fabricating a low loss varactor diode

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA797439A (en) * 1968-10-22 Fujitsu Limited Variable capacity diode
DE2104752B2 (de) * 1971-02-02 1975-02-20 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zum Herstellen einer Halbleiter-Kapazitätsdiode
US3906539A (en) * 1971-09-22 1975-09-16 Philips Corp Capacitance diode having a large capacitance ratio
US4106953A (en) * 1976-12-28 1978-08-15 Motorola, Inc. Method of producing an ion implanted tuning diode

Also Published As

Publication number Publication date
GB2026770A (en) 1980-02-06
DE2833318C2 (de) 1983-03-10
IT7924705A0 (it) 1979-07-26
DE2833318A1 (de) 1980-02-07
FR2435130B1 (ja) 1982-02-05
NL7905702A (nl) 1980-01-31
FR2435130A1 (fr) 1980-03-28
US4250514A (en) 1981-02-10
GB2026770B (en) 1983-01-06
IT1123478B (it) 1986-04-30
CA1130470A (en) 1982-08-24
JPH0137859B2 (ja) 1989-08-09

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