NL7905544A - Werkwijze voor het vormen van een monokristallijne laag van een oxydisch materiaal met spinel of granaat- structuur op een substraat. - Google Patents

Werkwijze voor het vormen van een monokristallijne laag van een oxydisch materiaal met spinel of granaat- structuur op een substraat. Download PDF

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Publication number
NL7905544A
NL7905544A NL7905544A NL7905544A NL7905544A NL 7905544 A NL7905544 A NL 7905544A NL 7905544 A NL7905544 A NL 7905544A NL 7905544 A NL7905544 A NL 7905544A NL 7905544 A NL7905544 A NL 7905544A
Authority
NL
Netherlands
Prior art keywords
normal
substrate crystal
melt
substrate
layer
Prior art date
Application number
NL7905544A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL7901629A external-priority patent/NL7901629A/nl
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL7905544A priority Critical patent/NL7905544A/nl
Priority to GB8006635A priority patent/GB2044629B/en
Priority to FR8004594A priority patent/FR2450291A1/fr
Priority to DE3008040A priority patent/DE3008040C2/de
Priority to DE19803051043 priority patent/DE3051043C2/de
Publication of NL7905544A publication Critical patent/NL7905544A/nl

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL7905544A 1979-03-01 1979-07-17 Werkwijze voor het vormen van een monokristallijne laag van een oxydisch materiaal met spinel of granaat- structuur op een substraat. NL7905544A (nl)

Priority Applications (5)

Application Number Priority Date Filing Date Title
NL7905544A NL7905544A (nl) 1979-03-01 1979-07-17 Werkwijze voor het vormen van een monokristallijne laag van een oxydisch materiaal met spinel of granaat- structuur op een substraat.
GB8006635A GB2044629B (en) 1979-03-01 1980-02-27 Growth of monocrystalline spinel or garnet layers
FR8004594A FR2450291A1 (fr) 1979-03-01 1980-02-29 Procede pour former sur un substrat une couche monocristalline en oxyde a structure de spinelle ou de grenat
DE3008040A DE3008040C2 (de) 1979-03-01 1980-03-03 Verfahren zum epitaktischen Aufwachsen einer einkristallinen Seltenerdmetall-Eisen-granat-Schicht auf einem einkristallinen Seltenerdmetall-Gallium-granat-Substrat
DE19803051043 DE3051043C2 (de) 1979-03-01 1980-03-03 Verfahren zum epitakischen Aufwachsen einer einkristallinen Spinellferrit-Schicht auf einem eink ristallinen Substratkristall

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
NL7901629 1979-03-01
NL7901629A NL7901629A (nl) 1979-03-01 1979-03-01 Werkwijze voor het vormen van monokristallijne laag van een magnetisch ijzeroxyde met spinel of granaat- structuur.
NL7905544 1979-07-17
NL7905544A NL7905544A (nl) 1979-03-01 1979-07-17 Werkwijze voor het vormen van een monokristallijne laag van een oxydisch materiaal met spinel of granaat- structuur op een substraat.

Publications (1)

Publication Number Publication Date
NL7905544A true NL7905544A (nl) 1980-09-03

Family

ID=26645502

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7905544A NL7905544A (nl) 1979-03-01 1979-07-17 Werkwijze voor het vormen van een monokristallijne laag van een oxydisch materiaal met spinel of granaat- structuur op een substraat.

Country Status (4)

Country Link
DE (2) DE3008040C2 (me)
FR (1) FR2450291A1 (me)
GB (1) GB2044629B (me)
NL (1) NL7905544A (me)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3698944A (en) * 1970-06-15 1972-10-17 Texas Instruments Inc Method of obtaining phased growth of epitaxial layers
JPS5133898A (me) * 1974-09-17 1976-03-23 Hitachi Ltd
US4050964A (en) * 1975-12-01 1977-09-27 Bell Telephone Laboratories, Incorporated Growing smooth epitaxial layers on misoriented substrates

Also Published As

Publication number Publication date
GB2044629B (en) 1983-02-09
DE3008040A1 (de) 1980-09-11
GB2044629A (en) 1980-10-22
DE3051043C2 (de) 1986-10-09
FR2450291B1 (me) 1982-11-26
FR2450291A1 (fr) 1980-09-26
DE3008040C2 (de) 1986-12-04

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