NL7802950A - INTEGRATED LOGIC GATE WITH P-TYPE SCHOTTKY INPUT DIODES. - Google Patents

INTEGRATED LOGIC GATE WITH P-TYPE SCHOTTKY INPUT DIODES.

Info

Publication number
NL7802950A
NL7802950A NL7802950A NL7802950A NL7802950A NL 7802950 A NL7802950 A NL 7802950A NL 7802950 A NL7802950 A NL 7802950A NL 7802950 A NL7802950 A NL 7802950A NL 7802950 A NL7802950 A NL 7802950A
Authority
NL
Netherlands
Prior art keywords
logic gate
integrated logic
type schottky
input diodes
schottky input
Prior art date
Application number
NL7802950A
Other languages
Dutch (nl)
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of NL7802950A publication Critical patent/NL7802950A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28537—Deposition of Schottky electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8226—Bipolar technology comprising merged transistor logic or integrated injection logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Logic Circuits (AREA)
NL7802950A 1977-03-18 1978-03-17 INTEGRATED LOGIC GATE WITH P-TYPE SCHOTTKY INPUT DIODES. NL7802950A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77941977A 1977-03-18 1977-03-18

Publications (1)

Publication Number Publication Date
NL7802950A true NL7802950A (en) 1978-09-20

Family

ID=25116383

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7802950A NL7802950A (en) 1977-03-18 1978-03-17 INTEGRATED LOGIC GATE WITH P-TYPE SCHOTTKY INPUT DIODES.

Country Status (4)

Country Link
JP (1) JPS53136979A (en)
DE (1) DE2811102A1 (en)
GB (1) GB1597536A (en)
NL (1) NL7802950A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3205950A1 (en) * 1981-10-22 1983-05-05 Robert Bosch Gmbh, 7000 Stuttgart BIPOLAR INTEGRATED INVERST TRANSISTOR LOGIC

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3962717A (en) * 1974-10-29 1976-06-08 Fairchild Camera And Instrument Corporation Oxide isolated integrated injection logic with selective guard ring
CA1056513A (en) * 1975-06-19 1979-06-12 Benjamin J. Sloan (Jr.) Integrated logic circuit and method of fabrication

Also Published As

Publication number Publication date
GB1597536A (en) 1981-09-09
DE2811102A1 (en) 1978-09-28
JPS53136979A (en) 1978-11-29

Similar Documents

Publication Publication Date Title
BE604729A (en) Semiconductor device with successive contiguous zones.
DK118700B (en) Flexible drain cover for kitchen sinks with a waste protection in the drain.
DK128592B (en) Zipper chain.
NL7807815A (en) SEMI-CONDUCTOR DEVICE WITH INSULATED GATE.
NL154623B (en) SEMI-CONDUCTOR DEVICE WITH A SCHOTTKY TRANSITION.
NL7707382A (en) LOGICAL INTEGRATED SEMI-CONDUCTOR CHAIN.
NL152122B (en) SEMI-CONDUCTOR DEVICE WITH A SCHOTTKY TRANSITION.
NL7708526A (en) INTEGRATED SEMICONDUCTOR CHAIN WITH STATIC INDUCTION TRANSISTOR.
DE3481242D1 (en) INTEGRATED GATE ORDER WITH SCHOTTKY DIODES.
NL144439B (en) INTEGRATED SEMICONDUCTOR CHAIN.
NL151564B (en) INTEGRATED SEMICONDUCTOR CHAIN WITH A SCHOTTKY DIODE AND METHOD FOR ITS MANUFACTURE.
NL7705959A (en) LOGICAL CONNECTION WITH A SCHOTTKY TRANSISTOR.
NL148188B (en) SEMI-CONDUCTOR DEVICE WITH A SCHOTTKY TRANSITION.
CH550486A (en) SCHOTTKY DIODE AND ITS USE IN ONE INTEGRATED DEVICE.
NL7802950A (en) INTEGRATED LOGIC GATE WITH P-TYPE SCHOTTKY INPUT DIODES.
NL152339B (en) HYDROKINETIC CLUTCH.
NL139641B (en) CHAIN WITH A TRANSISTOR.
DK114152B (en) Dishwasher with drain through a siphon.
NL152948B (en) SINK PIECE.
NL152710B (en) SEMI-CONDUCTOR DEVICE WITH A SCHOTTKY TRANSITION.
DD118336A1 (en) SEMICONDUCTOR ARRANGEMENT, PARTICULARLY SEMICONDUCTOR DIODE WITH IMPROVED TRANSMISSION LINE
AT353320B (en) INTEGRATED CIRCUIT IN A SILICON GATE TECHNOLOGY, IN PARTICULAR MEMORY CIRCUIT WITH SINGLE TRANSISTOR ELEMENTS
NL7612260A (en) CONVERSION SWITCHING IN INTEGRATED INJECTION LOGIC.
NL166582C (en) SEMICONDUCTOR DEVICE EQUIPPED WITH A TRANSISTOR WITH A SCHOTTKY DIODE SWITCHED PARALLELALLY AT THE BASE COLLECTOR TRANSITION.
DE3381131D1 (en) INTEGRATED INJECTION LOGIC CIRCUIT WITH SCHOTTKY BY-SHUTTER.

Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
BA A request for search or an international-type search has been filed
BT A document has been added to the application laid open to public inspection
BB A search report has been drawn up
BV The patent application has lapsed