NL7800693A - Optische stralingsdetector. - Google Patents
Optische stralingsdetector.Info
- Publication number
- NL7800693A NL7800693A NL7800693A NL7800693A NL7800693A NL 7800693 A NL7800693 A NL 7800693A NL 7800693 A NL7800693 A NL 7800693A NL 7800693 A NL7800693 A NL 7800693A NL 7800693 A NL7800693 A NL 7800693A
- Authority
- NL
- Netherlands
- Prior art keywords
- radiation detector
- optical radiation
- optical
- detector
- radiation
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title 1
- 230000005855 radiation Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
- H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/762,675 US4107721A (en) | 1977-01-26 | 1977-01-26 | Phototransistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7800693A true NL7800693A (nl) | 1978-07-28 |
Family
ID=25065754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7800693A NL7800693A (nl) | 1977-01-26 | 1978-01-19 | Optische stralingsdetector. |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4107721A (nl) |
| JP (1) | JPS5393882A (nl) |
| BE (1) | BE863197A (nl) |
| CA (1) | CA1086411A (nl) |
| DE (1) | DE2803203A1 (nl) |
| FR (1) | FR2379170A1 (nl) |
| GB (1) | GB1576177A (nl) |
| NL (1) | NL7800693A (nl) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4297721A (en) * | 1978-11-03 | 1981-10-27 | Mostek Corporation | Extremely low current load device for integrated circuit |
| US4212023A (en) * | 1978-11-30 | 1980-07-08 | General Electric Company | Bilateral phototransistor |
| DE2922250A1 (de) * | 1979-05-31 | 1980-12-11 | Siemens Ag | Lichtsteuerbarer transistor |
| US4282541A (en) * | 1979-12-26 | 1981-08-04 | Bell Telephone Laboratories, Incorporated | Planar P-I-N photodetectors |
| DE3001899A1 (de) * | 1980-01-19 | 1981-07-23 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Planar-fototransistor |
| US5053845A (en) * | 1980-05-23 | 1991-10-01 | Ricoh Company, Ltd. | Thin-film device |
| DE3044341C2 (de) * | 1980-11-25 | 1984-10-25 | Siemens AG, 1000 Berlin und 8000 München | Fototransistor |
| GB8333130D0 (en) * | 1983-12-12 | 1984-01-18 | Gen Electric Co Plc | Semiconductor devices |
| US4849799A (en) * | 1986-07-31 | 1989-07-18 | American Telephone And Telegraph Company At&T Bell Laboratories | Resonant tunneling transistor |
| US4870336A (en) * | 1987-07-27 | 1989-09-26 | Davidson Textron Inc. | Water jet trim head simulator |
| US4786848A (en) * | 1987-07-27 | 1988-11-22 | Davidson Textron Inc. | Water jet trim head simulator |
| US5969399A (en) * | 1998-05-19 | 1999-10-19 | Hewlett-Packard Company | High gain current mode photo-sensor |
| EP1142026B1 (de) * | 1998-12-04 | 2007-11-14 | Infineon Technologies AG | Leistungshalbleiterschalter |
| US6410970B1 (en) * | 2000-03-22 | 2002-06-25 | Ophir Rf, Inc. | Semiconductor device having a P-N junction with a photosensitive region |
| US6359324B1 (en) * | 2000-03-22 | 2002-03-19 | Ophir Rf, Inc. | Push-pull configurations for semiconductor device having a pn-junction with a photosensitive region |
| KR100781905B1 (ko) * | 2006-10-25 | 2007-12-04 | 한국전자통신연구원 | 헤테로 정션 바이폴라 트랜지스터를 포함하는 이미지 센서및 그 제조 방법 |
| JP2010135360A (ja) * | 2008-12-02 | 2010-06-17 | Mitsubishi Electric Corp | アバランシェフォトダイオード |
| US20110169520A1 (en) * | 2010-01-14 | 2011-07-14 | Mks Instruments, Inc. | Apparatus for measuring minority carrier lifetime and method for using the same |
| US9716202B2 (en) | 2012-08-13 | 2017-07-25 | The Curators Of The University Of Missouri | Optically activated linear switch for radar limiters or high power switching applications |
| JP6281297B2 (ja) * | 2014-01-27 | 2018-02-21 | 株式会社リコー | フォトトランジスタ、及び半導体装置 |
| JP6586793B2 (ja) * | 2015-06-30 | 2019-10-09 | 株式会社リコー | 光電変換装置及び画像生成装置 |
| US9812447B2 (en) * | 2016-02-02 | 2017-11-07 | Globalfoundries Inc. | Bipolar junction transistors with extrinsic device regions free of trench isolation |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6709192A (nl) * | 1967-07-01 | 1969-01-03 | ||
| US3532945A (en) * | 1967-08-30 | 1970-10-06 | Fairchild Camera Instr Co | Semiconductor devices having a low capacitance junction |
| JPS508315B1 (nl) * | 1970-02-20 | 1975-04-03 | ||
| US3755721A (en) * | 1970-06-15 | 1973-08-28 | Intel Corp | Floating gate solid state storage device and method for charging and discharging same |
| US3675025A (en) * | 1970-06-16 | 1972-07-04 | Bell Telephone Labor Inc | Electromagnetically sensitive device and charge storage method of operation |
| JPS5035793B1 (nl) * | 1970-09-11 | 1975-11-19 |
-
1977
- 1977-01-26 US US05/762,675 patent/US4107721A/en not_active Expired - Lifetime
- 1977-12-09 CA CA292,809A patent/CA1086411A/en not_active Expired
-
1978
- 1978-01-19 GB GB2299/78A patent/GB1576177A/en not_active Expired
- 1978-01-19 NL NL7800693A patent/NL7800693A/nl not_active Application Discontinuation
- 1978-01-23 BE BE184537A patent/BE863197A/xx not_active IP Right Cessation
- 1978-01-24 JP JP588978A patent/JPS5393882A/ja active Pending
- 1978-01-25 DE DE19782803203 patent/DE2803203A1/de not_active Withdrawn
- 1978-01-25 FR FR7802029A patent/FR2379170A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB1576177A (en) | 1980-10-01 |
| JPS5393882A (en) | 1978-08-17 |
| CA1086411A (en) | 1980-09-23 |
| US4107721A (en) | 1978-08-15 |
| FR2379170B1 (nl) | 1980-09-19 |
| BE863197A (fr) | 1978-05-16 |
| FR2379170A1 (fr) | 1978-08-25 |
| DE2803203A1 (de) | 1978-07-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A85 | Still pending on 85-01-01 | ||
| BV | The patent application has lapsed |