NL7412832A - SWITCHING DEVICE FOR OPERATION OF A GENE, PARTICULARLY A MOS MEMORY. - Google Patents

SWITCHING DEVICE FOR OPERATION OF A GENE, PARTICULARLY A MOS MEMORY.

Info

Publication number
NL7412832A
NL7412832A NL7412832A NL7412832A NL7412832A NL 7412832 A NL7412832 A NL 7412832A NL 7412832 A NL7412832 A NL 7412832A NL 7412832 A NL7412832 A NL 7412832A NL 7412832 A NL7412832 A NL 7412832A
Authority
NL
Netherlands
Prior art keywords
gene
switching device
mos memory
mos
memory
Prior art date
Application number
NL7412832A
Other languages
Dutch (nl)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19732348961 external-priority patent/DE2348961C3/en
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of NL7412832A publication Critical patent/NL7412832A/en

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/565Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using capacitive charge storage elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4096Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Analogue/Digital Conversion (AREA)
NL7412832A 1973-09-28 1974-09-27 SWITCHING DEVICE FOR OPERATION OF A GENE, PARTICULARLY A MOS MEMORY. NL7412832A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732348961 DE2348961C3 (en) 1973-09-28 Circuit arrangement for storing and storing signals in or from a memory, in particular a MOS memory

Publications (1)

Publication Number Publication Date
NL7412832A true NL7412832A (en) 1975-04-02

Family

ID=5894046

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7412832A NL7412832A (en) 1973-09-28 1974-09-27 SWITCHING DEVICE FOR OPERATION OF A GENE, PARTICULARLY A MOS MEMORY.

Country Status (11)

Country Link
JP (1) JPS5062333A (en)
AT (1) AT342342B (en)
BE (1) BE820448A (en)
CH (1) CH582938A5 (en)
DK (1) DK513074A (en)
FR (1) FR2246022B1 (en)
GB (1) GB1486912A (en)
IT (1) IT1022329B (en)
LU (1) LU71005A1 (en)
NL (1) NL7412832A (en)
SE (1) SE402998B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS524746A (en) * 1975-06-30 1977-01-14 Fujitsu Ltd Semiconductor memory device
JPS53138244A (en) * 1977-05-10 1978-12-02 Takeda Riken Ind Co Ltd Digital memory
EP0148488B1 (en) * 1983-12-23 1992-03-18 Hitachi, Ltd. Semiconductor memory having multiple level storage structure
JPS6163996A (en) * 1984-09-05 1986-04-02 Nippon Telegr & Teleph Corp <Ntt> Information memory
EP0649147A1 (en) * 1993-10-11 1995-04-19 Texas Instruments France Increased capacity storage device
US5440505A (en) * 1994-01-21 1995-08-08 Intel Corporation Method and circuitry for storing discrete amounts of charge in a single memory element
AU2593595A (en) * 1994-06-02 1996-01-04 Intel Corporation Sensing schemes for flash memory with multilevel cells
EP1416496A1 (en) 2002-11-04 2004-05-06 Dialog Semiconductor GmbH Multiple level ram device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3705391A (en) * 1971-10-22 1972-12-05 Massachusetts Inst Technology Memory system employing capacitance storage means

Also Published As

Publication number Publication date
DE2348961B2 (en) 1976-08-05
LU71005A1 (en) 1975-04-17
IT1022329B (en) 1978-03-20
JPS5062333A (en) 1975-05-28
GB1486912A (en) 1977-09-28
FR2246022A1 (en) 1975-04-25
BE820448A (en) 1975-03-27
SE402998B (en) 1978-07-24
DK513074A (en) 1975-05-12
CH582938A5 (en) 1976-12-15
SE7412226L (en) 1975-04-01
AT342342B (en) 1978-03-28
ATA766674A (en) 1977-07-15
DE2348961A1 (en) 1975-05-15
FR2246022B1 (en) 1979-06-01

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Legal Events

Date Code Title Description
BV The patent application has lapsed