NL7412567A - LOAD TRANSFER DEVICE. - Google Patents

LOAD TRANSFER DEVICE.

Info

Publication number
NL7412567A
NL7412567A NL7412567A NL7412567A NL7412567A NL 7412567 A NL7412567 A NL 7412567A NL 7412567 A NL7412567 A NL 7412567A NL 7412567 A NL7412567 A NL 7412567A NL 7412567 A NL7412567 A NL 7412567A
Authority
NL
Netherlands
Prior art keywords
transfer device
load transfer
load
transfer
Prior art date
Application number
NL7412567A
Other languages
Dutch (nl)
Other versions
NL184591C (en
NL184591B (en
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NLAANVRAGE7412567,A priority Critical patent/NL184591C/en
Priority to DE2541651A priority patent/DE2541651C2/en
Priority to IT27456/75A priority patent/IT1042721B/en
Priority to CH1217875A priority patent/CH593561A5/xx
Priority to GB38587/75A priority patent/GB1524685A/en
Priority to CA235,924A priority patent/CA1055159A/en
Priority to SE7510593A priority patent/SE401578B/en
Priority to AU85037/75A priority patent/AU497138B2/en
Priority to JP50114407A priority patent/JPS5158079A/en
Priority to FR7529102A priority patent/FR2286506A1/en
Publication of NL7412567A publication Critical patent/NL7412567A/en
Priority to US05/749,336 priority patent/US4077112A/en
Publication of NL184591B publication Critical patent/NL184591B/en
Application granted granted Critical
Publication of NL184591C publication Critical patent/NL184591C/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833Buried channel CCD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232Field-effect technology
    • H01L21/8234MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823406Combination of charge coupled devices, i.e. CCD, or BBD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025Channel region of field-effect devices
    • H01L29/1062Channel region of field-effect devices of charge coupled devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66946Charge transfer devices
    • H01L29/66954Charge transfer devices with an insulated gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
NLAANVRAGE7412567,A 1974-09-24 1974-09-24 CARGO TRANSFER. NL184591C (en)

Priority Applications (11)

Application Number Priority Date Filing Date Title
NLAANVRAGE7412567,A NL184591C (en) 1974-09-24 1974-09-24 CARGO TRANSFER.
DE2541651A DE2541651C2 (en) 1974-09-24 1975-09-18 Method of making a charge transfer assembly
CH1217875A CH593561A5 (en) 1974-09-24 1975-09-19
GB38587/75A GB1524685A (en) 1974-09-24 1975-09-19 Charge-transfer devices
CA235,924A CA1055159A (en) 1974-09-24 1975-09-19 Charge transfer device manufacture
IT27456/75A IT1042721B (en) 1974-09-24 1975-09-19 CHARGE TRANSFER DEVICE
SE7510593A SE401578B (en) 1974-09-24 1975-09-22 CHARGE TRANSFER DEVICE AND KIT FOR ITS MANUFACTURE
AU85037/75A AU497138B2 (en) 1974-09-24 1975-09-22 Charge transfer device
JP50114407A JPS5158079A (en) 1974-09-24 1975-09-23 Denkaisosochioyobi sonoseizohoho
FR7529102A FR2286506A1 (en) 1974-09-24 1975-09-23 LOAD TRANSFER DEVICE
US05/749,336 US4077112A (en) 1974-09-24 1976-12-10 Method of manufacturing charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7412567,A NL184591C (en) 1974-09-24 1974-09-24 CARGO TRANSFER.

Publications (3)

Publication Number Publication Date
NL7412567A true NL7412567A (en) 1976-03-26
NL184591B NL184591B (en) 1989-04-03
NL184591C NL184591C (en) 1989-09-01

Family

ID=19822150

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7412567,A NL184591C (en) 1974-09-24 1974-09-24 CARGO TRANSFER.

Country Status (10)

Country Link
JP (1) JPS5158079A (en)
AU (1) AU497138B2 (en)
CA (1) CA1055159A (en)
CH (1) CH593561A5 (en)
DE (1) DE2541651C2 (en)
FR (1) FR2286506A1 (en)
GB (1) GB1524685A (en)
IT (1) IT1042721B (en)
NL (1) NL184591C (en)
SE (1) SE401578B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5727494A (en) * 1980-07-23 1982-02-13 Sharp Corp Magneto-optical storage element
JPS5760542A (en) * 1980-09-29 1982-04-12 Toshiba Corp Information recording medium
JPS5766538A (en) * 1980-10-08 1982-04-22 Toshiba Corp Information storage medium
JPS57169938A (en) * 1981-04-10 1982-10-19 Sony Corp Optical type recording medium
JPS57172549A (en) * 1981-04-17 1982-10-23 C B S Sony Rekoode Kk Optical recording medium
JPS5814342A (en) * 1981-07-16 1983-01-27 Sharp Corp Production for optical storage element
JPS591136U (en) * 1982-06-25 1984-01-06 松下電器産業株式会社 optical information carrier
JPS5974534U (en) * 1982-11-10 1984-05-21 パイオニア株式会社 optical disc
JPS5999779U (en) * 1982-12-24 1984-07-05 共同印刷株式会社 ID card with optical memory medium
JPS59177032U (en) * 1983-05-13 1984-11-27 日立コンデンサ株式会社 laser disk
NL8502478A (en) * 1985-09-11 1987-04-01 Philips Nv METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
FR2641416A1 (en) * 1988-12-30 1990-07-06 Thomson Composants Militaires METHOD FOR MANUFACTURING CHARGE TRANSFER DEVICE
CA2150330A1 (en) * 1994-05-27 1995-11-28 Andre Willem Visagie Shadow box or box frame unit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3770988A (en) * 1970-09-04 1973-11-06 Gen Electric Self-registered surface charge launch-receive device and method for making
US3859717A (en) * 1970-12-21 1975-01-14 Rockwell International Corp Method of manufacturing control electrodes for charge coupled circuits and the like
DE2316612A1 (en) * 1972-04-03 1973-10-18 Hitachi Ltd CHARGE TRANSFER SEMICONDUCTOR DEVICES
IT981505B (en) * 1972-05-30 1974-10-10 Ibm PERFECTED SEMICONDUCTOR DEVICE WITH COUPLED LOADS
DE2314260A1 (en) * 1972-05-30 1973-12-13 Ibm CHARGE-COUPLED SEMI-CONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURING IT

Also Published As

Publication number Publication date
SE401578B (en) 1978-05-16
NL184591C (en) 1989-09-01
CH593561A5 (en) 1977-12-15
JPS5528227B2 (en) 1980-07-26
JPS5158079A (en) 1976-05-21
SE7510593L (en) 1976-03-25
DE2541651A1 (en) 1976-04-08
NL184591B (en) 1989-04-03
AU497138B2 (en) 1978-11-30
AU8503775A (en) 1977-03-31
IT1042721B (en) 1980-01-30
FR2286506A1 (en) 1976-04-23
FR2286506B1 (en) 1979-05-11
GB1524685A (en) 1978-09-13
CA1055159A (en) 1979-05-22
DE2541651C2 (en) 1983-10-06

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Legal Events

Date Code Title Description
BC A request for examination has been filed
A85 Still pending on 85-01-01
V1 Lapsed because of non-payment of the annual fee