NL7408711A - - Google Patents

Info

Publication number
NL7408711A
NL7408711A NL7408711A NL7408711A NL7408711A NL 7408711 A NL7408711 A NL 7408711A NL 7408711 A NL7408711 A NL 7408711A NL 7408711 A NL7408711 A NL 7408711A NL 7408711 A NL7408711 A NL 7408711A
Authority
NL
Netherlands
Application number
NL7408711A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7408711A publication Critical patent/NL7408711A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/01Manufacture or treatment
    • H10D30/021Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06Planarisation of inorganic insulating materials
    • H10P95/062Planarisation of inorganic insulating materials involving a dielectric removal step
    • H10P95/064Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42Vias, e.g. via plugs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48Insulating materials thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/913Active solid-state devices, e.g. transistors, solid-state diodes with means to absorb or localize unwanted impurities or defects from semiconductors, e.g. heavy metal gettering
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/91Controlling charging state at semiconductor-insulator interface
NL7408711A 1973-06-29 1974-06-27 NL7408711A (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US375295A US3887994A (en) 1973-06-29 1973-06-29 Method of manufacturing a semiconductor device

Publications (1)

Publication Number Publication Date
NL7408711A true NL7408711A (https=) 1974-12-31

Family

ID=23480293

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7408711A NL7408711A (https=) 1973-06-29 1974-06-27

Country Status (10)

Country Link
US (1) US3887994A (https=)
JP (1) JPS5323067B2 (https=)
AU (1) AU474451B2 (https=)
CA (1) CA1032658A (https=)
CH (1) CH568655A5 (https=)
DE (1) DE2425185C3 (https=)
FR (1) FR2235485B1 (https=)
GB (1) GB1466679A (https=)
IT (1) IT1010166B (https=)
NL (1) NL7408711A (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4290184A (en) * 1978-03-20 1981-09-22 Texas Instruments Incorporated Method of making post-metal programmable MOS read only memory
US4230504B1 (en) * 1978-04-27 1997-03-04 Texas Instruments Inc Method of making implant programmable N-channel rom
US4268950A (en) * 1978-06-05 1981-05-26 Texas Instruments Incorporated Post-metal ion implant programmable MOS read only memory
JPS55140986U (https=) * 1979-03-28 1980-10-08
JPS56114159A (en) * 1980-02-15 1981-09-08 Pioneer Electronic Corp Disc insertion detecting mechanism of autoloading player
DE3217026A1 (de) * 1981-05-06 1982-12-30 Mitsubishi Denki K.K., Tokyo Halbleitervorrichtung
US4439261A (en) * 1983-08-26 1984-03-27 International Business Machines Corporation Composite pallet
US4584026A (en) * 1984-07-25 1986-04-22 Rca Corporation Ion-implantation of phosphorus, arsenic or boron by pre-amorphizing with fluorine ions
GB2165692B (en) * 1984-08-25 1989-05-04 Ricoh Kk Manufacture of interconnection patterns
GB8729652D0 (en) * 1987-12-19 1988-02-03 Plessey Co Plc Semi-conductive devices fabricated on soi wafers
JPH0750697B2 (ja) * 1989-02-20 1995-05-31 株式会社東芝 半導体装置の製造方法
US5468974A (en) * 1994-05-26 1995-11-21 Lsi Logic Corporation Control and modification of dopant distribution and activation in polysilicon
US5432128A (en) * 1994-05-27 1995-07-11 Texas Instruments Incorporated Reliability enhancement of aluminum interconnects by reacting aluminum leads with a strengthening gas
US6093936A (en) * 1995-06-07 2000-07-25 Lsi Logic Corporation Integrated circuit with isolation of field oxidation by noble gas implantation
EP0776040A3 (en) * 1995-09-27 1999-11-03 Texas Instruments Incorporated Integrated circuit interconnect and method
US6391754B1 (en) 1996-09-27 2002-05-21 Texas Instruments Incorporated Method of making an integrated circuit interconnect
US6613671B1 (en) * 2000-03-03 2003-09-02 Micron Technology, Inc. Conductive connection forming methods, oxidation reducing methods, and integrated circuits formed thereby
DE102015120848B4 (de) * 2015-12-01 2017-10-26 Infineon Technologies Ag Herstellen einer Kontaktschicht auf einem Halbleiterkörper

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3515956A (en) * 1967-10-16 1970-06-02 Ion Physics Corp High-voltage semiconductor device having a guard ring containing substitutionally active ions in interstitial positions
US3600797A (en) * 1967-12-26 1971-08-24 Hughes Aircraft Co Method of making ohmic contacts to semiconductor bodies by indirect ion implantation
JPS4837232B1 (https=) * 1968-12-04 1973-11-09
BE759057A (https=) * 1969-11-19 1971-05-17 Philips Nv
US3682729A (en) * 1969-12-30 1972-08-08 Ibm Method of changing the physical properties of a metallic film by ion beam formation and devices produced thereby
JPS5137465B2 (https=) * 1971-09-13 1976-10-15
US3756861A (en) * 1972-03-13 1973-09-04 Bell Telephone Labor Inc Bipolar transistors and method of manufacture

Also Published As

Publication number Publication date
CH568655A5 (https=) 1975-10-31
DE2425185C3 (de) 1978-07-06
DE2425185A1 (de) 1975-01-16
GB1466679A (en) 1977-03-09
FR2235485B1 (https=) 1976-12-24
AU6856874A (en) 1975-11-06
JPS5323067B2 (https=) 1978-07-12
AU474451B2 (en) 1976-07-22
DE2425185B2 (de) 1977-11-10
JPS5024081A (https=) 1975-03-14
CA1032658A (en) 1978-06-06
IT1010166B (it) 1977-01-10
US3887994A (en) 1975-06-10
FR2235485A1 (https=) 1975-01-24

Similar Documents

Publication Publication Date Title
AU476761B2 (https=)
AU474593B2 (https=)
AU474511B2 (https=)
AU474838B2 (https=)
FR2235485B1 (https=)
AU476714B2 (https=)
FR2231106B1 (https=)
AU476696B2 (https=)
AU477823B2 (https=)
AU5393673A (https=)
AU476873B1 (https=)
AU477824B2 (https=)
AU5290373A (https=)
BG19608A2 (https=)
AU479496A (https=)
CH1191974A4 (https=)
CH1102274A4 (https=)
BG19700A1 (https=)
BG19632A1 (https=)
CH564266A5 (https=)
BG19515A1 (https=)
CH560957A5 (https=)
CH562086A5 (https=)
AU482220A (https=)
AU480353A (https=)

Legal Events

Date Code Title Description
BC A request for examination has been filed
A85 Still pending on 85-01-01
BV The patent application has lapsed