NL7406548A - METHOD OF DEPOSITING EPITAXIAL CRYSTALLINE LAYERS. - Google Patents

METHOD OF DEPOSITING EPITAXIAL CRYSTALLINE LAYERS.

Info

Publication number
NL7406548A
NL7406548A NL7406548A NL7406548A NL7406548A NL 7406548 A NL7406548 A NL 7406548A NL 7406548 A NL7406548 A NL 7406548A NL 7406548 A NL7406548 A NL 7406548A NL 7406548 A NL7406548 A NL 7406548A
Authority
NL
Netherlands
Prior art keywords
crystalline layers
epitaxial crystalline
depositing epitaxial
depositing
layers
Prior art date
Application number
NL7406548A
Other languages
Dutch (nl)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of NL7406548A publication Critical patent/NL7406548A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/025—Deposition multi-step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/129—Pulse doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
NL7406548A 1973-08-17 1974-05-16 METHOD OF DEPOSITING EPITAXIAL CRYSTALLINE LAYERS. NL7406548A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US389192A US3885061A (en) 1973-08-17 1973-08-17 Dual growth rate method of depositing epitaxial crystalline layers

Publications (1)

Publication Number Publication Date
NL7406548A true NL7406548A (en) 1975-02-19

Family

ID=23537232

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7406548A NL7406548A (en) 1973-08-17 1974-05-16 METHOD OF DEPOSITING EPITAXIAL CRYSTALLINE LAYERS.

Country Status (14)

Country Link
US (1) US3885061A (en)
JP (1) JPS547556B2 (en)
BE (1) BE814071A (en)
CA (1) CA1025334A (en)
CH (1) CH590084A5 (en)
DE (1) DE2422508C3 (en)
FR (1) FR2245406B1 (en)
GB (1) GB1459839A (en)
IN (1) IN141844B (en)
IT (1) IT1012165B (en)
NL (1) NL7406548A (en)
SE (1) SE401463B (en)
SU (1) SU612610A3 (en)
YU (1) YU39168B (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986192A (en) * 1975-01-02 1976-10-12 Bell Telephone Laboratories, Incorporated High efficiency gallium arsenide impatt diodes
US4201604A (en) * 1975-08-13 1980-05-06 Raytheon Company Process for making a negative resistance diode utilizing spike doping
AU530905B2 (en) * 1977-12-22 1983-08-04 Canon Kabushiki Kaisha Electrophotographic photosensitive member
DE2943634C2 (en) * 1979-10-29 1983-09-29 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Epitaxial reactor
US4279688A (en) * 1980-03-17 1981-07-21 Rca Corporation Method of improving silicon crystal perfection in silicon on sapphire devices
US4596208A (en) * 1984-11-05 1986-06-24 Spire Corporation CVD reaction chamber
GB2185758B (en) * 1985-12-28 1990-09-05 Canon Kk Method for forming deposited film
US4838983A (en) * 1986-07-03 1989-06-13 Emcore, Inc. Gas treatment apparatus and method
US4772356A (en) * 1986-07-03 1988-09-20 Emcore, Inc. Gas treatment apparatus and method
US4775641A (en) * 1986-09-25 1988-10-04 General Electric Company Method of making silicon-on-sapphire semiconductor devices
US5281283A (en) * 1987-03-26 1994-01-25 Canon Kabushiki Kaisha Group III-V compound crystal article using selective epitaxial growth
CA1332039C (en) * 1987-03-26 1994-09-20 Takao Yonehara Ii - vi group compound crystal article and process for producing the same
JPS63237517A (en) * 1987-03-26 1988-10-04 Canon Inc Selective formation of iii-v compound film
US5304820A (en) * 1987-03-27 1994-04-19 Canon Kabushiki Kaisha Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same
CA1321121C (en) * 1987-03-27 1993-08-10 Hiroyuki Tokunaga Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same
JPH01161826A (en) * 1987-12-18 1989-06-26 Toshiba Corp Vapor phase epitaxial growth method
US5104690A (en) * 1990-06-06 1992-04-14 Spire Corporation CVD thin film compounds
USH1145H (en) 1990-09-25 1993-03-02 Sematech, Inc. Rapid temperature response wafer chuck
JP2000223419A (en) 1998-06-30 2000-08-11 Sony Corp Method of forming single crystal silicon layer, and semiconductor device and manufacture thereof
RU2618279C1 (en) * 2016-06-23 2017-05-03 Акционерное общество "Эпиэл" Method of manufacturing the epitaxial layer of silicon on a dielectric substrate
CN116884832B (en) * 2023-09-06 2023-12-15 合肥晶合集成电路股份有限公司 Semiconductor device and method for manufacturing the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3189494A (en) * 1963-08-22 1965-06-15 Texas Instruments Inc Epitaxial crystal growth onto a stabilizing layer which prevents diffusion from the substrate
US3663319A (en) * 1968-11-20 1972-05-16 Gen Motors Corp Masking to prevent autodoping of epitaxial deposits
US3669769A (en) * 1970-09-29 1972-06-13 Ibm Method for minimizing autodoping in epitaxial deposition
US3765960A (en) * 1970-11-02 1973-10-16 Ibm Method for minimizing autodoping in epitaxial deposition
JPS5113607B2 (en) * 1971-08-24 1976-05-01

Also Published As

Publication number Publication date
US3885061A (en) 1975-05-20
YU39168B (en) 1984-08-31
DE2422508A1 (en) 1975-03-13
GB1459839A (en) 1976-12-31
FR2245406B1 (en) 1982-09-24
BE814071A (en) 1974-08-16
FR2245406A1 (en) 1975-04-25
JPS5046481A (en) 1975-04-25
SE401463B (en) 1978-05-16
IT1012165B (en) 1977-03-10
DE2422508C3 (en) 1979-08-02
SE7406350L (en) 1975-02-18
YU223674A (en) 1982-05-31
DE2422508B2 (en) 1978-11-23
IN141844B (en) 1977-04-23
SU612610A3 (en) 1978-06-25
CH590084A5 (en) 1977-07-29
CA1025334A (en) 1978-01-31
AU6895474A (en) 1975-11-20
JPS547556B2 (en) 1979-04-07

Similar Documents

Publication Publication Date Title
NL7406548A (en) METHOD OF DEPOSITING EPITAXIAL CRYSTALLINE LAYERS.
NL7415645A (en) METHOD OF PREPARING KOOKS.
NL177466C (en) METHOD FOR MANUFACTURING MICROCAPSULES
NL7412946A (en) METHOD FOR PREPARING POLYURETHAN-M.
NL7506951A (en) METHOD OF PREPARING PHARMACOLOGICALLY ACTIVE COMPOUNDS.
NL7805623A (en) METHOD FOR FORMING EPITAXIAL LAYERS.
NL7411112A (en) METHOD FOR PREPARING AQUICAL COATING MATERIALS.
NL7409980A (en) METHOD OF SEPARATING XYLENE.
NL182545C (en) METHOD OF MANUFACTURING A NETWORK
NL180940C (en) METHOD FOR PRODUCING CYCLODEXTRINEGLYCOSYL TRANSFERASE.
NL7416142A (en) METHOD OF PREPARING KOOKS.
NL7413822A (en) METHOD FOR PREPARING IMIDEN.
BE814426A (en) METHOD AND DEVICE FOR GROWING EPITAXIAL LAYERS FROM THE LIQUID PHASE
NL186609C (en) METHOD FOR PREPARING CRYSTALLINE BODIES.
NL7311470A (en) METHOD OF DEPOSITING AN EPITAXIAL
NL7409978A (en) METHOD FOR THE MANUFACTURE OF MICROBOLLES.
NL7412092A (en) PROCESS FOR ISOMERIZING XYLENE.
NL7414620A (en) METHOD FOR THE ISOMERIZATION OF ALKINS.
NL157945B (en) METHOD OF WINNING CRYSTALLINE LACTOSE.
NL7712315A (en) METHOD FOR EPITAXIAL DEPOSITION OF SEVERAL LAYERS.
NL7411911A (en) METHOD OF GROWING CRYSTALS.
NL7502531A (en) METHOD FOR THE ELECTROLYTIC DEPOSITION OF NICKEL.
BE823943A (en) METHOD FOR GROWTH OF A SEMICONDUCTOR JOINT
NL181264C (en) METHOD FOR MANUFACTURING CASTS
NL7413137A (en) METHOD OF PREPARING ANTIMICROBIAL RATS.

Legal Events

Date Code Title Description
BV The patent application has lapsed