NL7406548A - METHOD OF DEPOSITING EPITAXIAL CRYSTALLINE LAYERS. - Google Patents
METHOD OF DEPOSITING EPITAXIAL CRYSTALLINE LAYERS.Info
- Publication number
- NL7406548A NL7406548A NL7406548A NL7406548A NL7406548A NL 7406548 A NL7406548 A NL 7406548A NL 7406548 A NL7406548 A NL 7406548A NL 7406548 A NL7406548 A NL 7406548A NL 7406548 A NL7406548 A NL 7406548A
- Authority
- NL
- Netherlands
- Prior art keywords
- crystalline layers
- epitaxial crystalline
- depositing epitaxial
- depositing
- layers
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/007—Autodoping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/025—Deposition multi-step
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/129—Pulse doping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US389192A US3885061A (en) | 1973-08-17 | 1973-08-17 | Dual growth rate method of depositing epitaxial crystalline layers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7406548A true NL7406548A (en) | 1975-02-19 |
Family
ID=23537232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7406548A NL7406548A (en) | 1973-08-17 | 1974-05-16 | METHOD OF DEPOSITING EPITAXIAL CRYSTALLINE LAYERS. |
Country Status (14)
| Country | Link |
|---|---|
| US (1) | US3885061A (en) |
| JP (1) | JPS547556B2 (en) |
| BE (1) | BE814071A (en) |
| CA (1) | CA1025334A (en) |
| CH (1) | CH590084A5 (en) |
| DE (1) | DE2422508C3 (en) |
| FR (1) | FR2245406B1 (en) |
| GB (1) | GB1459839A (en) |
| IN (1) | IN141844B (en) |
| IT (1) | IT1012165B (en) |
| NL (1) | NL7406548A (en) |
| SE (1) | SE401463B (en) |
| SU (1) | SU612610A3 (en) |
| YU (1) | YU39168B (en) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3986192A (en) * | 1975-01-02 | 1976-10-12 | Bell Telephone Laboratories, Incorporated | High efficiency gallium arsenide impatt diodes |
| US4201604A (en) * | 1975-08-13 | 1980-05-06 | Raytheon Company | Process for making a negative resistance diode utilizing spike doping |
| AU530905B2 (en) | 1977-12-22 | 1983-08-04 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member |
| DE2943634C2 (en) * | 1979-10-29 | 1983-09-29 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Epitaxial reactor |
| US4279688A (en) * | 1980-03-17 | 1981-07-21 | Rca Corporation | Method of improving silicon crystal perfection in silicon on sapphire devices |
| US4596208A (en) * | 1984-11-05 | 1986-06-24 | Spire Corporation | CVD reaction chamber |
| GB2185758B (en) * | 1985-12-28 | 1990-09-05 | Canon Kk | Method for forming deposited film |
| US4838983A (en) * | 1986-07-03 | 1989-06-13 | Emcore, Inc. | Gas treatment apparatus and method |
| US4772356A (en) * | 1986-07-03 | 1988-09-20 | Emcore, Inc. | Gas treatment apparatus and method |
| US4775641A (en) * | 1986-09-25 | 1988-10-04 | General Electric Company | Method of making silicon-on-sapphire semiconductor devices |
| US5281283A (en) * | 1987-03-26 | 1994-01-25 | Canon Kabushiki Kaisha | Group III-V compound crystal article using selective epitaxial growth |
| JPS63237517A (en) * | 1987-03-26 | 1988-10-04 | Canon Inc | Selective formation of iii-v compound film |
| CA1332039C (en) * | 1987-03-26 | 1994-09-20 | Takao Yonehara | Ii - vi group compound crystal article and process for producing the same |
| CA1321121C (en) * | 1987-03-27 | 1993-08-10 | Hiroyuki Tokunaga | Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same |
| US5304820A (en) * | 1987-03-27 | 1994-04-19 | Canon Kabushiki Kaisha | Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same |
| JPH01161826A (en) * | 1987-12-18 | 1989-06-26 | Toshiba Corp | Vapor phase epitaxial growth method |
| US5104690A (en) * | 1990-06-06 | 1992-04-14 | Spire Corporation | CVD thin film compounds |
| USH1145H (en) | 1990-09-25 | 1993-03-02 | Sematech, Inc. | Rapid temperature response wafer chuck |
| JP2000223419A (en) | 1998-06-30 | 2000-08-11 | Sony Corp | Method of forming single crystal silicon layer, and semiconductor device and manufacture thereof |
| RU2618279C1 (en) * | 2016-06-23 | 2017-05-03 | Акционерное общество "Эпиэл" | Method of manufacturing the epitaxial layer of silicon on a dielectric substrate |
| CN116884832B (en) * | 2023-09-06 | 2023-12-15 | 合肥晶合集成电路股份有限公司 | Semiconductor device and method for manufacturing the same |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3189494A (en) * | 1963-08-22 | 1965-06-15 | Texas Instruments Inc | Epitaxial crystal growth onto a stabilizing layer which prevents diffusion from the substrate |
| US3663319A (en) * | 1968-11-20 | 1972-05-16 | Gen Motors Corp | Masking to prevent autodoping of epitaxial deposits |
| US3669769A (en) * | 1970-09-29 | 1972-06-13 | Ibm | Method for minimizing autodoping in epitaxial deposition |
| US3765960A (en) * | 1970-11-02 | 1973-10-16 | Ibm | Method for minimizing autodoping in epitaxial deposition |
| JPS5113607B2 (en) * | 1971-08-24 | 1976-05-01 |
-
1973
- 1973-08-17 US US389192A patent/US3885061A/en not_active Expired - Lifetime
-
1974
- 1974-04-11 IN IN819/CAL/74A patent/IN141844B/en unknown
- 1974-04-23 BE BE143512A patent/BE814071A/en unknown
- 1974-05-01 GB GB1906074A patent/GB1459839A/en not_active Expired
- 1974-05-08 IT IT22445/74A patent/IT1012165B/en active
- 1974-05-09 DE DE2422508A patent/DE2422508C3/en not_active Expired
- 1974-05-14 CA CA199,858A patent/CA1025334A/en not_active Expired
- 1974-05-16 SU SU742025410A patent/SU612610A3/en active
- 1974-05-16 CH CH673774A patent/CH590084A5/xx not_active IP Right Cessation
- 1974-05-16 NL NL7406548A patent/NL7406548A/en not_active Application Discontinuation
- 1974-05-16 JP JP5529974A patent/JPS547556B2/ja not_active Expired
- 1974-05-17 FR FR7417303A patent/FR2245406B1/fr not_active Expired
- 1974-07-13 SE SE7406350A patent/SE401463B/en unknown
- 1974-08-15 YU YU02236/74A patent/YU39168B/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPS547556B2 (en) | 1979-04-07 |
| IT1012165B (en) | 1977-03-10 |
| IN141844B (en) | 1977-04-23 |
| JPS5046481A (en) | 1975-04-25 |
| FR2245406A1 (en) | 1975-04-25 |
| AU6895474A (en) | 1975-11-20 |
| CH590084A5 (en) | 1977-07-29 |
| CA1025334A (en) | 1978-01-31 |
| GB1459839A (en) | 1976-12-31 |
| DE2422508B2 (en) | 1978-11-23 |
| US3885061A (en) | 1975-05-20 |
| YU223674A (en) | 1982-05-31 |
| BE814071A (en) | 1974-08-16 |
| DE2422508C3 (en) | 1979-08-02 |
| FR2245406B1 (en) | 1982-09-24 |
| SE401463B (en) | 1978-05-16 |
| YU39168B (en) | 1984-08-31 |
| SU612610A3 (en) | 1978-06-25 |
| DE2422508A1 (en) | 1975-03-13 |
| SE7406350L (en) | 1975-02-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BV | The patent application has lapsed |