JPS5113607B2 - - Google Patents
Info
- Publication number
- JPS5113607B2 JPS5113607B2 JP6491371A JP6491371A JPS5113607B2 JP S5113607 B2 JPS5113607 B2 JP S5113607B2 JP 6491371 A JP6491371 A JP 6491371A JP 6491371 A JP6491371 A JP 6491371A JP S5113607 B2 JPS5113607 B2 JP S5113607B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6491371A JPS5113607B2 (en) | 1971-08-24 | 1971-08-24 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6491371A JPS5113607B2 (en) | 1971-08-24 | 1971-08-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS4830891A JPS4830891A (en) | 1973-04-23 |
JPS5113607B2 true JPS5113607B2 (en) | 1976-05-01 |
Family
ID=13271747
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6491371A Expired JPS5113607B2 (en) | 1971-08-24 | 1971-08-24 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5113607B2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3885061A (en) * | 1973-08-17 | 1975-05-20 | Rca Corp | Dual growth rate method of depositing epitaxial crystalline layers |
JPS547554B2 (en) * | 1974-02-14 | 1979-04-07 | ||
FR2296264A1 (en) * | 1974-12-24 | 1976-07-23 | Radiotechnique Compelec | PROCESS FOR REALIZING A HETEROJUNCTION SEMICONDUCTOR DEVICE |
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1971
- 1971-08-24 JP JP6491371A patent/JPS5113607B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS4830891A (en) | 1973-04-23 |