BE814071A - PROCESS FOR DEPOSITING EPITAXIAL LAYERS AT TWO GROWTH SPEED - Google Patents

PROCESS FOR DEPOSITING EPITAXIAL LAYERS AT TWO GROWTH SPEED

Info

Publication number
BE814071A
BE814071A BE143512A BE143512A BE814071A BE 814071 A BE814071 A BE 814071A BE 143512 A BE143512 A BE 143512A BE 143512 A BE143512 A BE 143512A BE 814071 A BE814071 A BE 814071A
Authority
BE
Belgium
Prior art keywords
epitaxial layers
growth speed
depositing epitaxial
depositing
growth
Prior art date
Application number
BE143512A
Other languages
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE814071A publication Critical patent/BE814071A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/025—Deposition multi-step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/129—Pulse doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
BE143512A 1973-08-17 1974-04-23 PROCESS FOR DEPOSITING EPITAXIAL LAYERS AT TWO GROWTH SPEED BE814071A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US389192A US3885061A (en) 1973-08-17 1973-08-17 Dual growth rate method of depositing epitaxial crystalline layers

Publications (1)

Publication Number Publication Date
BE814071A true BE814071A (en) 1974-08-16

Family

ID=23537232

Family Applications (1)

Application Number Title Priority Date Filing Date
BE143512A BE814071A (en) 1973-08-17 1974-04-23 PROCESS FOR DEPOSITING EPITAXIAL LAYERS AT TWO GROWTH SPEED

Country Status (14)

Country Link
US (1) US3885061A (en)
JP (1) JPS547556B2 (en)
BE (1) BE814071A (en)
CA (1) CA1025334A (en)
CH (1) CH590084A5 (en)
DE (1) DE2422508C3 (en)
FR (1) FR2245406B1 (en)
GB (1) GB1459839A (en)
IN (1) IN141844B (en)
IT (1) IT1012165B (en)
NL (1) NL7406548A (en)
SE (1) SE401463B (en)
SU (1) SU612610A3 (en)
YU (1) YU39168B (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986192A (en) * 1975-01-02 1976-10-12 Bell Telephone Laboratories, Incorporated High efficiency gallium arsenide impatt diodes
US4201604A (en) * 1975-08-13 1980-05-06 Raytheon Company Process for making a negative resistance diode utilizing spike doping
AU530905B2 (en) * 1977-12-22 1983-08-04 Canon Kabushiki Kaisha Electrophotographic photosensitive member
DE2943634C2 (en) * 1979-10-29 1983-09-29 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Epitaxial reactor
US4279688A (en) * 1980-03-17 1981-07-21 Rca Corporation Method of improving silicon crystal perfection in silicon on sapphire devices
US4596208A (en) * 1984-11-05 1986-06-24 Spire Corporation CVD reaction chamber
GB2185758B (en) * 1985-12-28 1990-09-05 Canon Kk Method for forming deposited film
US4838983A (en) * 1986-07-03 1989-06-13 Emcore, Inc. Gas treatment apparatus and method
US4772356A (en) * 1986-07-03 1988-09-20 Emcore, Inc. Gas treatment apparatus and method
US4775641A (en) * 1986-09-25 1988-10-04 General Electric Company Method of making silicon-on-sapphire semiconductor devices
US5281283A (en) * 1987-03-26 1994-01-25 Canon Kabushiki Kaisha Group III-V compound crystal article using selective epitaxial growth
CA1332039C (en) * 1987-03-26 1994-09-20 Takao Yonehara Ii - vi group compound crystal article and process for producing the same
JPS63237517A (en) * 1987-03-26 1988-10-04 Canon Inc Selective formation of iii-v compound film
US5304820A (en) * 1987-03-27 1994-04-19 Canon Kabushiki Kaisha Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same
CA1321121C (en) * 1987-03-27 1993-08-10 Hiroyuki Tokunaga Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same
JPH01161826A (en) * 1987-12-18 1989-06-26 Toshiba Corp Vapor phase epitaxial growth method
US5104690A (en) * 1990-06-06 1992-04-14 Spire Corporation CVD thin film compounds
USH1145H (en) 1990-09-25 1993-03-02 Sematech, Inc. Rapid temperature response wafer chuck
JP2000223419A (en) 1998-06-30 2000-08-11 Sony Corp Method of forming single crystal silicon layer, and semiconductor device and manufacture thereof
RU2618279C1 (en) * 2016-06-23 2017-05-03 Акционерное общество "Эпиэл" Method of manufacturing the epitaxial layer of silicon on a dielectric substrate
CN116884832B (en) * 2023-09-06 2023-12-15 合肥晶合集成电路股份有限公司 Semiconductor device and method for manufacturing the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3189494A (en) * 1963-08-22 1965-06-15 Texas Instruments Inc Epitaxial crystal growth onto a stabilizing layer which prevents diffusion from the substrate
US3663319A (en) * 1968-11-20 1972-05-16 Gen Motors Corp Masking to prevent autodoping of epitaxial deposits
US3669769A (en) * 1970-09-29 1972-06-13 Ibm Method for minimizing autodoping in epitaxial deposition
US3765960A (en) * 1970-11-02 1973-10-16 Ibm Method for minimizing autodoping in epitaxial deposition
JPS5113607B2 (en) * 1971-08-24 1976-05-01

Also Published As

Publication number Publication date
US3885061A (en) 1975-05-20
YU39168B (en) 1984-08-31
DE2422508A1 (en) 1975-03-13
NL7406548A (en) 1975-02-19
GB1459839A (en) 1976-12-31
FR2245406B1 (en) 1982-09-24
FR2245406A1 (en) 1975-04-25
JPS5046481A (en) 1975-04-25
SE401463B (en) 1978-05-16
IT1012165B (en) 1977-03-10
DE2422508C3 (en) 1979-08-02
SE7406350L (en) 1975-02-18
YU223674A (en) 1982-05-31
DE2422508B2 (en) 1978-11-23
IN141844B (en) 1977-04-23
SU612610A3 (en) 1978-06-25
CH590084A5 (en) 1977-07-29
CA1025334A (en) 1978-01-31
AU6895474A (en) 1975-11-20
JPS547556B2 (en) 1979-04-07

Similar Documents

Publication Publication Date Title
BE814071A (en) PROCESS FOR DEPOSITING EPITAXIAL LAYERS AT TWO GROWTH SPEED
BE835279A (en) PROCESS FOR PREPARING POLYISOCYANATES WITH ISOCYANDRATES STRUCTURE
YU180374A (en) Depositing machine
RO72710A (en) PROCESS FOR PREPARING 2-CARBOXYETHYL-N-PHOSPHONOMETHYLGLICINATE
BE820631A (en) PROCESS FOR PREPARING A SYNTHETIC HYDROCARBON LUBRICANT
YU36264B (en) Depositing device for a slicing machine
BE811072A (en) SYNTHETIC SPATH-FLUOR PREPARATION PROCESS
BE814866A (en) PROCESS FOR PREPARING 7BETA-AMINO CEPHALOSPORINS
YU297874A (en) Process for obtaining a combined plastic system
RO72493A (en) PLANT GROWTH ADJUSTMENT COMPOSITION
YU20173A (en) Process for obtaining cephalosporinic compounds substituted in position 3 with a carbamoyloxymethyl group
RO72882A (en) PROCESS FOR PREPARING THE SUBSTITUTED PIROL
CA988087A (en) Process for producing organic compounds containing a mercaptoethyl group
CS189612B2 (en) Process for preparing olefines
IT1023258B (en) VALVE COMPLEX FOR BRINE
BE812709A (en) HETEROGENEOUS EPITAXIAL GROWTH PROCESS
BE821064A (en) PROCESS FOR PREPARING SYNTHETIC L-PYROGLUTAMYL-L-HISTIDYL-L-PROLINAMIDE
BE779123A (en) PROCESS FOR PREPARING A NEW ANTIBIOTIC
ZA743426B (en) Plant growth regulants
ZA734410B (en) Process for preparing pesticidal compounds
HU171096B (en) Harvesting machine for rooted crop
CA1017553A (en) Method for drawing synthetic yarn
AU479514B2 (en) A method to improve zinc deposition employing multi-nitrogen quaternaries
AU492227B2 (en) Article depositing machine
GB1401153A (en) Trimmer for plastic bottles