NL7404659A - Semiconductor device - e.g. containing an insulated gate - or field-electrode - Google Patents

Semiconductor device - e.g. containing an insulated gate - or field-electrode

Info

Publication number
NL7404659A
NL7404659A NL7404659A NL7404659A NL7404659A NL 7404659 A NL7404659 A NL 7404659A NL 7404659 A NL7404659 A NL 7404659A NL 7404659 A NL7404659 A NL 7404659A NL 7404659 A NL7404659 A NL 7404659A
Authority
NL
Netherlands
Prior art keywords
layer
etching
semiconductor body
insulating layer
semiconductor device
Prior art date
Application number
NL7404659A
Other languages
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL7404659A priority Critical patent/NL7404659A/en
Publication of NL7404659A publication Critical patent/NL7404659A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Mfr. of a semiconductor device by applying a first electrically insulating layer on a surface of a part of a semiconductor body of a first conducting type; applying a layer of a second conducting type converting the first and second layers into a desired pattern by etching, whereby a part of the first insulating layer situated below the edge of the remaining part of the second conducting layer is removed at least locally, and then chemically converting a surface layer of the semiconductor body into an electrically insulating material, so that the space formed by under-etching between the edge of the second layer and the semiconductor body is at least partly filled. The break-down potential across the space produced by under etching in the usual technique is significantly lowered and may fall further due to a accumulation of impurities which are difficult if not impossible to remove. The electrical and mechanical props. are markedly improved by partial and pref. the complete filling of such spaced by the insulating layer.
NL7404659A 1974-04-05 1974-04-05 Semiconductor device - e.g. containing an insulated gate - or field-electrode NL7404659A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
NL7404659A NL7404659A (en) 1974-04-05 1974-04-05 Semiconductor device - e.g. containing an insulated gate - or field-electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7404659A NL7404659A (en) 1974-04-05 1974-04-05 Semiconductor device - e.g. containing an insulated gate - or field-electrode

Publications (1)

Publication Number Publication Date
NL7404659A true NL7404659A (en) 1975-10-07

Family

ID=19821125

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7404659A NL7404659A (en) 1974-04-05 1974-04-05 Semiconductor device - e.g. containing an insulated gate - or field-electrode

Country Status (1)

Country Link
NL (1) NL7404659A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0026953A1 (en) * 1979-10-08 1981-04-15 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0026953A1 (en) * 1979-10-08 1981-04-15 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device

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