Classifications

• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
  • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
  • G11C19/287—Organisation of a multiplicity of shift registers
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
  • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
  • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
  • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
  • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
  • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
  • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
  • G11C19/188—Organisation of a multiplicity of shift registers, e.g. regeneration, timing or input-output circuits
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID

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• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Dram (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=23245997

Family Applications (1)

Country Status (5)

Cited By (2)

Families Citing this family (4)

Family Cites Families (1)

• 1973
  • 1973-11-23 DD DD174863A patent/DD110575A5/xx unknown
  • 1973-11-28 NL NL7316277A patent/NL7316277A/xx unknown
  • 1973-11-29 JP JP48133989A patent/JPS4999442A/ja active Pending
  • 1973-12-14 DE DE2362242A patent/DE2362242A1/de active Pending
  • 1973-12-18 FR FR7345300A patent/FR2212703B1/fr not_active Expired

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