NL7314944A - - Google Patents
Info
- Publication number
- NL7314944A NL7314944A NL7314944A NL7314944A NL7314944A NL 7314944 A NL7314944 A NL 7314944A NL 7314944 A NL7314944 A NL 7314944A NL 7314944 A NL7314944 A NL 7314944A NL 7314944 A NL7314944 A NL 7314944A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/139—Schottky barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/936—Graded energy gap
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US00302800A US3849789A (en) | 1972-11-01 | 1972-11-01 | Schottky barrier diodes |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7314944A true NL7314944A (xx) | 1974-05-03 |
Family
ID=23169266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7314944A NL7314944A (xx) | 1972-11-01 | 1973-10-31 |
Country Status (7)
Country | Link |
---|---|
US (1) | US3849789A (xx) |
JP (1) | JPS4996677A (xx) |
DE (1) | DE2354489A1 (xx) |
FR (1) | FR2204893B1 (xx) |
GB (1) | GB1451054A (xx) |
IT (1) | IT998854B (xx) |
NL (1) | NL7314944A (xx) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3904449A (en) * | 1974-05-09 | 1975-09-09 | Bell Telephone Labor Inc | Growth technique for high efficiency gallium arsenide impatt diodes |
US4138700A (en) * | 1975-06-23 | 1979-02-06 | Module-Eight Corporation | Container for using a miniaturized cartridge in an eight-track player |
US4110488A (en) * | 1976-04-09 | 1978-08-29 | Rca Corporation | Method for making schottky barrier diodes |
GB1558506A (en) * | 1976-08-09 | 1980-01-03 | Mullard Ltd | Semiconductor devices having a rectifying metalto-semicondductor junction |
US4412376A (en) * | 1979-03-30 | 1983-11-01 | Ibm Corporation | Fabrication method for vertical PNP structure with Schottky barrier diode emitter utilizing ion implantation |
US4313971A (en) * | 1979-05-29 | 1982-02-02 | Rca Corporation | Method of fabricating a Schottky barrier contact |
US4529994A (en) * | 1981-12-17 | 1985-07-16 | Clarion Co., Ltd. | Variable capacitor with single depletion layer |
US4713681A (en) * | 1985-05-31 | 1987-12-15 | Harris Corporation | Structure for high breakdown PN diode with relatively high surface doping |
US4740477A (en) * | 1985-10-04 | 1988-04-26 | General Instrument Corporation | Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics |
FR2592527B1 (fr) * | 1985-12-31 | 1988-02-05 | Thomson Csf | Diode a capacite variable, a profil hyperabrupt et structure plane, et son procede de realisation |
US5166769A (en) * | 1988-07-18 | 1992-11-24 | General Instrument Corporation | Passitvated mesa semiconductor and method for making same |
US4980315A (en) * | 1988-07-18 | 1990-12-25 | General Instrument Corporation | Method of making a passivated P-N junction in mesa semiconductor structure |
US5345100A (en) * | 1991-03-29 | 1994-09-06 | Shindengen Electric Manufacturing Co., Ltd. | Semiconductor rectifier having high breakdown voltage and high speed operation |
US5150177A (en) * | 1991-12-06 | 1992-09-22 | National Semiconductor Corporation | Schottky diode structure with localized diode well |
JPH0964381A (ja) * | 1995-08-25 | 1997-03-07 | Murata Mfg Co Ltd | ショットキーバリアダイオード |
US5612567A (en) * | 1996-05-13 | 1997-03-18 | North Carolina State University | Schottky barrier rectifiers and methods of forming same |
US6621121B2 (en) * | 1998-10-26 | 2003-09-16 | Silicon Semiconductor Corporation | Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes |
US5998833A (en) * | 1998-10-26 | 1999-12-07 | North Carolina State University | Power semiconductor devices having improved high frequency switching and breakdown characteristics |
DE60030059T2 (de) * | 1999-04-08 | 2007-03-29 | Koninklijke Philips Electronics N.V. | Durchbruchsdiode und verfahren zur herstellung |
US6191447B1 (en) | 1999-05-28 | 2001-02-20 | Micro-Ohm Corporation | Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same |
FR2803103B1 (fr) | 1999-12-24 | 2003-08-29 | St Microelectronics Sa | Diode schottky sur substrat de carbure de silicium |
EP2535937B1 (en) * | 2011-06-17 | 2015-03-11 | Friedrich-Alexander-Universität Erlangen-Nürnberg | Electronic device |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL96818C (xx) * | 1952-03-14 | |||
NL125412C (xx) * | 1959-04-15 | |||
US3523046A (en) * | 1964-09-14 | 1970-08-04 | Ibm | Method of epitaxially depositing single-crystal layer and structure resulting therefrom |
US3388000A (en) * | 1964-09-18 | 1968-06-11 | Texas Instruments Inc | Method of forming a metal contact on a semiconductor device |
US3486086A (en) * | 1966-07-08 | 1969-12-23 | Richard W Soshea | Surface barrier semiconductor limiter employing low barrier height metals on silicon |
US3451912A (en) * | 1966-07-15 | 1969-06-24 | Ibm | Schottky-barrier diode formed by sputter-deposition processes |
US3500144A (en) * | 1966-10-18 | 1970-03-10 | Texas Instruments Inc | Random whisker contact method for semiconductor devices |
US3419764A (en) * | 1966-12-12 | 1968-12-31 | Kasugai Takahiko | Negative resistance semiconductor devices |
JPS4844395B1 (xx) * | 1968-08-02 | 1973-12-24 | ||
JPS4831021B1 (xx) * | 1968-09-14 | 1973-09-26 | ||
JPS4837227B1 (xx) * | 1968-12-20 | 1973-11-09 | ||
US3638300A (en) * | 1970-05-21 | 1972-02-01 | Bell Telephone Labor Inc | Forming impurity regions in semiconductors |
US3652905A (en) * | 1970-05-26 | 1972-03-28 | Westinghouse Electric Corp | Schottky barrier power rectifier |
US3742317A (en) * | 1970-09-02 | 1973-06-26 | Instr Inc | Schottky barrier diode |
US3675316A (en) * | 1971-02-01 | 1972-07-11 | Bell Telephone Labor Inc | Group iii-v schottky barrier diodes |
DE2331558A1 (de) * | 1973-06-20 | 1975-01-16 | Siemens Ag | Nichtabschmelzende elektrode, insbesondere zum wig-schweissen, sowie verfahren zu deren herstellung |
-
1972
- 1972-11-01 US US00302800A patent/US3849789A/en not_active Expired - Lifetime
-
1973
- 1973-10-23 IT IT30423/73A patent/IT998854B/it active
- 1973-10-31 NL NL7314944A patent/NL7314944A/xx unknown
- 1973-10-31 DE DE19732354489 patent/DE2354489A1/de active Pending
- 1973-10-31 FR FR7338769A patent/FR2204893B1/fr not_active Expired
- 1973-11-01 GB GB5084873A patent/GB1451054A/en not_active Expired
- 1973-11-01 JP JP48122266A patent/JPS4996677A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
FR2204893B1 (xx) | 1978-02-10 |
JPS4996677A (xx) | 1974-09-12 |
DE2354489A1 (de) | 1974-05-09 |
FR2204893A1 (xx) | 1974-05-24 |
US3849789A (en) | 1974-11-19 |
IT998854B (it) | 1976-02-20 |
GB1451054A (en) | 1976-09-29 |