JPS4844395B1 - - Google Patents

Info

Publication number
JPS4844395B1
JPS4844395B1 JP43055672A JP5567268A JPS4844395B1 JP S4844395 B1 JPS4844395 B1 JP S4844395B1 JP 43055672 A JP43055672 A JP 43055672A JP 5567268 A JP5567268 A JP 5567268A JP S4844395 B1 JPS4844395 B1 JP S4844395B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP43055672A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP43055672A priority Critical patent/JPS4844395B1/ja
Priority to US846062A priority patent/US3663320A/en
Publication of JPS4844395B1 publication Critical patent/JPS4844395B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/916—Autodoping control or utilization

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP43055672A 1968-08-02 1968-08-02 Pending JPS4844395B1 (xx)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP43055672A JPS4844395B1 (xx) 1968-08-02 1968-08-02
US846062A US3663320A (en) 1968-08-02 1969-07-30 Vapor growth process for gallium arsenide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP43055672A JPS4844395B1 (xx) 1968-08-02 1968-08-02

Publications (1)

Publication Number Publication Date
JPS4844395B1 true JPS4844395B1 (xx) 1973-12-24

Family

ID=13005346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP43055672A Pending JPS4844395B1 (xx) 1968-08-02 1968-08-02

Country Status (2)

Country Link
US (1) US3663320A (xx)
JP (1) JPS4844395B1 (xx)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3964089A (en) * 1972-09-21 1976-06-15 Bell Telephone Laboratories, Incorporated Junction transistor with linearly graded impurity concentration in the high resistivity portion of its collector zone
US3849789A (en) * 1972-11-01 1974-11-19 Gen Electric Schottky barrier diodes
US3793093A (en) * 1973-01-12 1974-02-19 Handotai Kenkyu Shinkokai Method for producing a semiconductor device having a very small deviation in lattice constant
US4574093A (en) * 1983-12-30 1986-03-04 At&T Bell Laboratories Deposition technique
US4792467A (en) * 1987-08-17 1988-12-20 Morton Thiokol, Inc. Method for vapor phase deposition of gallium nitride film
US5384151A (en) * 1993-08-11 1995-01-24 Northwestern University InGaAsP/GaAs diode laser
US5389396A (en) * 1993-08-11 1995-02-14 Northwestern University InGaAsP/GaAs diode laser
US5410178A (en) * 1994-08-22 1995-04-25 Northwestern University Semiconductor films

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3211589A (en) * 1960-07-14 1965-10-12 Hughes Aircraft Co P-n junction formation in iii-v semiconductor compounds
US3371051A (en) * 1965-06-22 1968-02-27 Rowland E. Johnson Intrinsic-appearing gallium arsenide compound semiconductor material
US3392193A (en) * 1964-11-18 1968-07-09 Texas Instruments Inc Gallium arsenide semiconductor doped with chromium and a shallow acceptor impurity
US3533967A (en) * 1966-11-10 1970-10-13 Monsanto Co Double-doped gallium arsenide and method of preparation

Also Published As

Publication number Publication date
US3663320A (en) 1972-05-16

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