NL7303316A - - Google Patents

Info

Publication number
NL7303316A
NL7303316A NL7303316A NL7303316A NL7303316A NL 7303316 A NL7303316 A NL 7303316A NL 7303316 A NL7303316 A NL 7303316A NL 7303316 A NL7303316 A NL 7303316A NL 7303316 A NL7303316 A NL 7303316A
Authority
NL
Netherlands
Application number
NL7303316A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7303316A publication Critical patent/NL7303316A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL7303316A 1972-03-15 1973-03-09 NL7303316A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7209008A FR2175594B1 (enrdf_load_stackoverflow) 1972-03-15 1972-03-15

Publications (1)

Publication Number Publication Date
NL7303316A true NL7303316A (enrdf_load_stackoverflow) 1973-09-18

Family

ID=9095236

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7303316A NL7303316A (enrdf_load_stackoverflow) 1972-03-15 1973-03-09

Country Status (7)

Country Link
JP (1) JPS492782A (enrdf_load_stackoverflow)
BE (1) BE796707A (enrdf_load_stackoverflow)
DE (1) DE2311573A1 (enrdf_load_stackoverflow)
FR (1) FR2175594B1 (enrdf_load_stackoverflow)
GB (1) GB1415549A (enrdf_load_stackoverflow)
IT (1) IT980554B (enrdf_load_stackoverflow)
NL (1) NL7303316A (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51145475A (en) * 1975-06-10 1976-12-14 Fujitsu Ltd A process for producing semiconductive crystal
JPS5583335A (en) * 1978-12-20 1980-06-23 Hitachi Ltd Digital-to-analog converter
CA1197755A (en) * 1980-05-22 1985-12-10 Robert A. Lancaster Controlled directional solidification of semiconductor alloys
FR2487863A1 (fr) * 1980-08-01 1982-02-05 Sklyarov Alexei Dispositif pour la croissance des monocristaux a partir d'alliages a constituants multiples
US4475582A (en) * 1982-01-27 1984-10-09 United Technologies Corporation Casting a metal single crystal article using a seed crystal and a helix
US4590043A (en) * 1982-12-27 1986-05-20 Sri International Apparatus for obtaining silicon from fluosilicic acid
FR2546912B1 (fr) * 1983-06-06 1987-07-10 Commissariat Energie Atomique Procede et dispositif d'elaboration d'un monocristal
JPS6033286A (ja) * 1983-07-28 1985-02-20 Natsuo Yugawa 単結晶製造用るつぼ
US5123996A (en) * 1991-01-28 1992-06-23 At&T Bell Laboratories Crystal growth method and apparatus
EP2589687A1 (en) 2011-11-04 2013-05-08 Vesuvius France (S.A.) Crucible and method for the production of a (near ) monocrystalline semiconductor ingot
EP2604728A1 (en) 2011-12-12 2013-06-19 Vesuvius France S.A. Crucible for the production of crystalline semiconductor ingots and process for manufacturing the same

Also Published As

Publication number Publication date
FR2175594A1 (enrdf_load_stackoverflow) 1973-10-26
GB1415549A (en) 1975-11-26
DE2311573A1 (de) 1973-09-27
JPS492782A (enrdf_load_stackoverflow) 1974-01-11
BE796707A (fr) 1973-09-13
FR2175594B1 (enrdf_load_stackoverflow) 1974-09-13
IT980554B (it) 1974-10-10

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Legal Events

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