NL7302026A - - Google Patents

Info

Publication number
NL7302026A
NL7302026A NL7302026A NL7302026A NL7302026A NL 7302026 A NL7302026 A NL 7302026A NL 7302026 A NL7302026 A NL 7302026A NL 7302026 A NL7302026 A NL 7302026A NL 7302026 A NL7302026 A NL 7302026A
Authority
NL
Netherlands
Application number
NL7302026A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7302026A publication Critical patent/NL7302026A/xx

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
NL7302026A 1972-02-18 1973-02-13 NL7302026A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47016432A JPS5217995B2 (ja) 1972-02-18 1972-02-18

Publications (1)

Publication Number Publication Date
NL7302026A true NL7302026A (ja) 1973-08-21

Family

ID=11916061

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7302026A NL7302026A (ja) 1972-02-18 1973-02-13

Country Status (4)

Country Link
US (1) US3825454A (ja)
JP (1) JPS5217995B2 (ja)
DE (1) DE2307814A1 (ja)
NL (1) NL7302026A (ja)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5525500B2 (ja) * 1972-06-26 1980-07-07
JPS5062385A (ja) * 1973-10-02 1975-05-28
US3936331A (en) * 1974-04-01 1976-02-03 Fairchild Camera And Instrument Corporation Process for forming sloped topography contact areas between polycrystalline silicon and single-crystal silicon
FR2288392A1 (fr) * 1974-10-18 1976-05-14 Radiotechnique Compelec Procede de realisation de dispositifs semiconducteurs
US4022930A (en) * 1975-05-30 1977-05-10 Bell Telephone Laboratories, Incorporated Multilevel metallization for integrated circuits
JPS5922337B2 (ja) * 1975-09-17 1984-05-25 ニホンアイ ビ− エム カブシキガイシヤ ガス・パネル装置の製造方法
US4082604A (en) * 1976-01-05 1978-04-04 Motorola, Inc. Semiconductor process
JPS52136590A (en) * 1976-05-11 1977-11-15 Matsushita Electric Ind Co Ltd Production of semiconductor device
NL7701559A (nl) * 1977-02-15 1978-08-17 Philips Nv Het maken van schuine hellingen aan metaal- patronen, alsmede substraat voor een geinte- greerde schakeling voorzien van een dergelijk patroon.
US4098638A (en) * 1977-06-14 1978-07-04 Westinghouse Electric Corp. Methods for making a sloped insulator for solid state devices
GB2023926B (en) * 1978-06-22 1983-03-16 Western Electric Co Conductors for semiconductor devices
JPS5539650A (en) * 1978-09-12 1980-03-19 Nec Corp Manufacture of semiconductor device
JPS5546587A (en) * 1978-09-29 1980-04-01 Nec Corp Method of forming plasma growing film
US4230522A (en) * 1978-12-26 1980-10-28 Rockwell International Corporation PNAF Etchant for aluminum and silicon
DE2903308A1 (de) * 1979-01-29 1980-08-28 Siemens Ag Verfahren zum herstellen von leitbahnstrukturen fuer integrierte halbleiterschaltungen
WO1984001966A1 (en) * 1982-11-11 1984-05-24 Masahide Ichikawa Battery using porous aluminum metal
EP0469370A3 (en) * 1990-07-31 1992-09-09 Gold Star Co. Ltd Etching process for sloped side walls
JP3111478B2 (ja) * 1991-02-06 2000-11-20 三菱電機株式会社 金属薄膜のテーパーエッチング方法及び薄膜トランジスタ
JP2614403B2 (ja) * 1993-08-06 1997-05-28 インターナショナル・ビジネス・マシーンズ・コーポレイション テーパエッチング方法
EP0660381A1 (en) * 1993-12-21 1995-06-28 Koninklijke Philips Electronics N.V. Method of manufacturing a transparent conductor pattern and a liquid crystal display device
JPH07310191A (ja) * 1994-05-11 1995-11-28 Semiconductor Energy Lab Co Ltd エッチング材料およびエッチング方法
US6147395A (en) * 1996-10-02 2000-11-14 Micron Technology, Inc. Method for fabricating a small area of contact between electrodes
KR100271769B1 (ko) * 1998-06-25 2001-02-01 윤종용 반도체소자의 제조방법, 이를 위한 반도체소자 제조용 식각액조성물 및 반도체소자
JP4199206B2 (ja) * 2005-03-18 2008-12-17 シャープ株式会社 半導体装置の製造方法
CN101199043B (zh) 2005-06-24 2010-05-19 三菱瓦斯化学株式会社 腐蚀剂组合物及使用该组合物的半导体装置的制备方法
DE102006008261A1 (de) * 2006-02-22 2007-08-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Ätzlösung und Verfahren zur Strukturierung eines UBM-Schichtsystems

Also Published As

Publication number Publication date
JPS4887777A (ja) 1973-11-17
JPS5217995B2 (ja) 1977-05-19
DE2307814A1 (de) 1973-08-30
US3825454A (en) 1974-07-23

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