NL7300800A - - Google Patents

Info

Publication number
NL7300800A
NL7300800A NL7300800A NL7300800A NL7300800A NL 7300800 A NL7300800 A NL 7300800A NL 7300800 A NL7300800 A NL 7300800A NL 7300800 A NL7300800 A NL 7300800A NL 7300800 A NL7300800 A NL 7300800A
Authority
NL
Netherlands
Application number
NL7300800A
Other versions
NL160990C (nl
NL160990B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7300800A publication Critical patent/NL7300800A/xx
Publication of NL160990B publication Critical patent/NL160990B/xx
Application granted granted Critical
Publication of NL160990C publication Critical patent/NL160990C/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
NL7300800.A 1972-01-27 1973-01-19 Fotospanningsdetector bestaande uit een plaatje halfge- leidend kwik-cadmiumtelluride met twee door een pn-over- gang gescheiden zones van verschillend geleidingstype. NL160990C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7202654A FR2168934B1 (cs) 1972-01-27 1972-01-27

Publications (3)

Publication Number Publication Date
NL7300800A true NL7300800A (cs) 1973-07-31
NL160990B NL160990B (nl) 1979-07-16
NL160990C NL160990C (nl) 1979-12-17

Family

ID=9092517

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7300800.A NL160990C (nl) 1972-01-27 1973-01-19 Fotospanningsdetector bestaande uit een plaatje halfge- leidend kwik-cadmiumtelluride met twee door een pn-over- gang gescheiden zones van verschillend geleidingstype.

Country Status (4)

Country Link
US (1) US3845494A (cs)
FR (1) FR2168934B1 (cs)
GB (1) GB1421853A (cs)
NL (1) NL160990C (cs)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3987298A (en) * 1975-07-09 1976-10-19 Honeywell Inc. Photodetector system for determination of the wavelength of incident radiation
US3982260A (en) * 1975-08-01 1976-09-21 Mobil Tyco Solar Energy Corporation Light sensitive electronic devices
FR2336804A1 (fr) * 1975-12-23 1977-07-22 Telecommunications Sa Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne
US5936268A (en) * 1988-03-29 1999-08-10 Raytheon Company Epitaxial passivation of group II-VI infrared photodetectors
US4956304A (en) * 1988-04-07 1990-09-11 Santa Barbara Research Center Buried junction infrared photodetector process
US5880510A (en) * 1988-05-11 1999-03-09 Raytheon Company Graded layer passivation of group II-VI infrared photodetectors
US4961098A (en) * 1989-07-03 1990-10-02 Santa Barbara Research Center Heterojunction photodiode array
US5049962A (en) * 1990-03-07 1991-09-17 Santa Barbara Research Center Control of optical crosstalk between adjacent photodetecting regions
US5192695A (en) * 1991-07-09 1993-03-09 Fermionics Corporation Method of making an infrared detector
EP0635892B1 (en) * 1992-07-21 2002-06-26 Raytheon Company Bake-stable HgCdTe photodetector and method for fabricating same
US5296384A (en) * 1992-07-21 1994-03-22 Santa Barbara Research Center Bake-stable HgCdTe photodetector and method for fabricating same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3218203A (en) * 1961-10-09 1965-11-16 Monsanto Co Altering proportions in vapor deposition process to form a mixed crystal graded energy gap
US3411050A (en) * 1966-04-28 1968-11-12 Air Force Usa Flexible storable solar cell array
US3437527A (en) * 1966-10-26 1969-04-08 Webb James E Method for producing a solar cell having an integral protective covering
US3539883A (en) * 1967-03-15 1970-11-10 Ion Physics Corp Antireflection coatings for semiconductor devices

Also Published As

Publication number Publication date
FR2168934A1 (cs) 1973-09-07
GB1421853A (en) 1976-01-21
NL160990C (nl) 1979-12-17
US3845494A (en) 1974-10-29
FR2168934B1 (cs) 1977-04-01
DE2302747A1 (de) 1973-08-02
NL160990B (nl) 1979-07-16
DE2302747B2 (de) 1976-09-23

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: TELECOMMUNICA