NL7217558A - - Google Patents
Info
- Publication number
- NL7217558A NL7217558A NL7217558A NL7217558A NL7217558A NL 7217558 A NL7217558 A NL 7217558A NL 7217558 A NL7217558 A NL 7217558A NL 7217558 A NL7217558 A NL 7217558A NL 7217558 A NL7217558 A NL 7217558A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP47003545A JPS528075B2 (en) | 1971-12-27 | 1971-12-27 | |
| JP2091572A JPS5221870B2 (en) | 1972-02-28 | 1972-02-28 | |
| JP47022535A JPS5134267B2 (en) | 1972-03-04 | 1972-03-04 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NL7217558A true NL7217558A (en) | 1973-06-29 |
| NL165334B NL165334B (en) | 1980-10-15 |
| NL165334C NL165334C (en) | 1981-03-16 |
Family
ID=27275879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7217558A NL165334C (en) | 1971-12-27 | 1972-12-22 | FIELD EFFECT TRANSISTOR. |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE2263091C2 (en) |
| NL (1) | NL165334C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3040873C2 (en) * | 1980-10-30 | 1984-02-23 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Field effect transistor |
| US5689129A (en) * | 1995-06-07 | 1997-11-18 | Harris Corporation | High efficiency power MOS switch |
| CN103094333B (en) * | 2011-11-03 | 2015-09-16 | 杭州汉安半导体有限公司 | A kind of high-power thyristor |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2930950A (en) * | 1956-12-10 | 1960-03-29 | Teszner Stanislas | High power field-effect transistor |
| FR1317256A (en) * | 1961-12-16 | 1963-02-08 | Teszner Stanislas | Improvements to semiconductor devices known as multibrand tecnetrons |
| CH455055A (en) * | 1967-03-15 | 1968-04-30 | Ibm | Semiconductor arrangement comprising a substrate, a mask containing openings and a monocrystalline semiconductor layer connected to the substrate through the openings |
| US3497777A (en) * | 1967-06-13 | 1970-02-24 | Stanislas Teszner | Multichannel field-effect semi-conductor device |
-
1972
- 1972-12-22 NL NL7217558A patent/NL165334C/en not_active IP Right Cessation
- 1972-12-22 DE DE19722263091 patent/DE2263091C2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2263091C2 (en) | 1983-01-27 |
| NL165334C (en) | 1981-03-16 |
| DE2263091A1 (en) | 1973-07-12 |
| NL165334B (en) | 1980-10-15 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| V4 | Lapsed because of reaching the maxim lifetime of a patent |