NL7217305A - - Google Patents

Info

Publication number
NL7217305A
NL7217305A NL7217305A NL7217305A NL7217305A NL 7217305 A NL7217305 A NL 7217305A NL 7217305 A NL7217305 A NL 7217305A NL 7217305 A NL7217305 A NL 7217305A NL 7217305 A NL7217305 A NL 7217305A
Authority
NL
Netherlands
Application number
NL7217305A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7217305A publication Critical patent/NL7217305A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • H10H20/824Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/174Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being Group III-V material
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/049Equivalence and options
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/056Gallium arsenide
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/065Gp III-V generic compounds-processing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/106Masks, special
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/914Doping
    • Y10S438/923Diffusion through a layer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/971Stoichiometric control of host substrate composition
NL7217305A 1972-03-23 1972-12-19 NL7217305A (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2214224A DE2214224C3 (de) 1972-03-23 1972-03-23 Verfahren zur Bildung von pn-Übergängen in III-V-Halbleiter-Einkristallen

Publications (1)

Publication Number Publication Date
NL7217305A true NL7217305A (https=) 1973-09-25

Family

ID=5839948

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7217305A NL7217305A (https=) 1972-03-23 1972-12-19

Country Status (11)

Country Link
US (1) US3925121A (https=)
JP (1) JPS5231147B2 (https=)
AT (1) AT317316B (https=)
CA (1) CA1002433A (https=)
CH (1) CH576808A5 (https=)
DE (1) DE2214224C3 (https=)
FR (1) FR2176669B1 (https=)
GB (1) GB1388641A (https=)
IT (1) IT981579B (https=)
NL (1) NL7217305A (https=)
SE (1) SE378156B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4099997A (en) * 1976-06-21 1978-07-11 Rca Corporation Method of fabricating a semiconductor device
JPS6030204Y2 (ja) * 1981-07-29 1985-09-11 東京パ−ツ株式会社 ブラシ付蓋を有する粘性液用容器
JPS6057923A (ja) * 1983-09-09 1985-04-03 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体結晶の均質化方法
US4502898A (en) * 1983-12-21 1985-03-05 At&T Bell Laboratories Diffusion procedure for semiconductor compound
US4634474A (en) * 1984-10-09 1987-01-06 At&T Bell Laboratories Coating of III-V and II-VI compound semiconductors
JPS62441U (https=) * 1985-06-20 1987-01-06
EP0377940B1 (en) * 1989-01-13 1994-11-17 Kabushiki Kaisha Toshiba Compound semiconductor material and semiconductor element using the same and method of manufacturing the semiconductor element
US6297538B1 (en) 1998-03-23 2001-10-02 The University Of Delaware Metal-insulator-semiconductor field effect transistor having an oxidized aluminum nitride gate insulator formed on a gallium nitride or silicon substrate
US7439609B2 (en) * 2004-03-29 2008-10-21 Cree, Inc. Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures
US9275854B2 (en) * 2013-08-07 2016-03-01 Globalfoundries Inc. Compound semiconductor integrated circuit and method to fabricate same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3245847A (en) * 1962-11-19 1966-04-12 Hughes Aircraft Co Method of producing stable gallium arsenide and semiconductor diodes made therefrom
US3255056A (en) * 1963-05-20 1966-06-07 Rca Corp Method of forming semiconductor junction
US3298879A (en) * 1964-03-23 1967-01-17 Rca Corp Method of fabricating a semiconductor by masking
US3408238A (en) * 1965-06-02 1968-10-29 Texas Instruments Inc Use of both silicon oxide and phosphorus oxide to mask against diffusion of indium or gallium into germanium semiconductor device
US3422322A (en) * 1965-08-25 1969-01-14 Texas Instruments Inc Drift transistor
GB1098564A (en) * 1966-09-20 1968-01-10 Standard Telephones Cables Ltd A method for producing gallium arsenide devices
US3537921A (en) * 1967-02-28 1970-11-03 Motorola Inc Selective hydrofluoric acid etching and subsequent processing
JPS4915903B1 (https=) * 1969-08-18 1974-04-18
US3660156A (en) * 1970-08-19 1972-05-02 Monsanto Co Semiconductor doping compositions

Also Published As

Publication number Publication date
IT981579B (it) 1974-10-10
DE2214224B2 (de) 1977-09-08
GB1388641A (en) 1975-03-26
FR2176669B1 (https=) 1977-02-25
DE2214224C3 (de) 1978-05-03
JPS5231147B2 (https=) 1977-08-12
SE378156B (https=) 1975-08-18
CA1002433A (en) 1976-12-28
FR2176669A1 (https=) 1973-11-02
US3925121A (en) 1975-12-09
DE2214224A1 (de) 1973-10-04
USB339218I5 (https=) 1975-01-28
AT317316B (de) 1974-08-26
JPS499184A (https=) 1974-01-26
CH576808A5 (https=) 1976-06-30

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