NL7215200A - - Google Patents

Info

Publication number
NL7215200A
NL7215200A NL7215200A NL7215200A NL7215200A NL 7215200 A NL7215200 A NL 7215200A NL 7215200 A NL7215200 A NL 7215200A NL 7215200 A NL7215200 A NL 7215200A NL 7215200 A NL7215200 A NL 7215200A
Authority
NL
Netherlands
Application number
NL7215200A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL7215200A priority Critical patent/NL7215200A/xx
Priority to DE2353770A priority patent/DE2353770C3/de
Priority to IN2407/CAL/73A priority patent/IN140549B/en
Priority to AT936373A priority patent/ATA936373A/de
Priority to CA185,225A priority patent/CA1006274A/en
Priority to CH1561673A priority patent/CH574165A5/xx
Priority to BR8693/73A priority patent/BR7308693D0/pt
Priority to GB5162073A priority patent/GB1445724A/en
Priority to SE7315118A priority patent/SE391997B/xx
Priority to IT70268/73A priority patent/IT996919B/it
Priority to BE137545A priority patent/BE807079A/xx
Priority to ES420364A priority patent/ES420364A1/es
Priority to JP48125022A priority patent/JPS5227031B2/ja
Priority to FR7339853A priority patent/FR2206589B1/fr
Priority to AU62320/73A priority patent/AU479602B2/en
Publication of NL7215200A publication Critical patent/NL7215200A/xx
Priority to US05/725,781 priority patent/US4143383A/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4822—Beam leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/0788—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/24—Frequency- independent attenuators
    • H03H7/25—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
    • H03H7/253—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode
    • H03H7/255—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode the element being a PIN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76289—Lateral isolation by air gap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Power Conversion In General (AREA)
  • Amplitude Modulation (AREA)
  • Attenuators (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Non-Reversible Transmitting Devices (AREA)
NL7215200A 1972-11-10 1972-11-10 NL7215200A ( )

Priority Applications (16)

Application Number Priority Date Filing Date Title
NL7215200A NL7215200A ( ) 1972-11-10 1972-11-10
DE2353770A DE2353770C3 (de) 1972-11-10 1973-10-26 Halbleiteranordnung
IN2407/CAL/73A IN140549B ( ) 1972-11-10 1973-10-31
GB5162073A GB1445724A (en) 1972-11-10 1973-11-07 Semiconductor device
CA185,225A CA1006274A (en) 1972-11-10 1973-11-07 Integrated p-i-n semiconductor diodes
CH1561673A CH574165A5 ( ) 1972-11-10 1973-11-07
BR8693/73A BR7308693D0 (pt) 1972-11-10 1973-11-07 Dispositivo semicondutor
AT936373A ATA936373A (de) 1972-11-10 1973-11-07 Halbleiter-abschwaecher
SE7315118A SE391997B (sv) 1972-11-10 1973-11-07 Dempsats med styrbar impedans med en signalingang, en signalutgang och tva dioder, som er anordnade i serie och motriktat inkopplade mellan ingangen och utgangen
IT70268/73A IT996919B (it) 1972-11-10 1973-11-07 Dispositivo semiconduttore
BE137545A BE807079A (nl) 1972-11-10 1973-11-08 Halfgeleiderinrichting
ES420364A ES420364A1 (es) 1972-11-10 1973-11-08 Un dispositivo de semiconductor.
JP48125022A JPS5227031B2 ( ) 1972-11-10 1973-11-08
FR7339853A FR2206589B1 ( ) 1972-11-10 1973-11-09
AU62320/73A AU479602B2 (en) 1972-11-10 1973-11-09 Semiconductor device
US05/725,781 US4143383A (en) 1972-11-10 1976-09-23 Controllable impedance attenuator having all connection contacts on one side

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7215200A NL7215200A ( ) 1972-11-10 1972-11-10

Publications (1)

Publication Number Publication Date
NL7215200A true NL7215200A ( ) 1974-05-14

Family

ID=19817338

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7215200A NL7215200A ( ) 1972-11-10 1972-11-10

Country Status (15)

Country Link
US (1) US4143383A ( )
JP (1) JPS5227031B2 ( )
AT (1) ATA936373A ( )
BE (1) BE807079A ( )
BR (1) BR7308693D0 ( )
CA (1) CA1006274A ( )
CH (1) CH574165A5 ( )
DE (1) DE2353770C3 ( )
ES (1) ES420364A1 ( )
FR (1) FR2206589B1 ( )
GB (1) GB1445724A ( )
IN (1) IN140549B ( )
IT (1) IT996919B ( )
NL (1) NL7215200A ( )
SE (1) SE391997B ( )

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4932640A ( ) * 1972-07-20 1974-03-25
US4050055A (en) * 1976-07-26 1977-09-20 Krautkramer-Branson, Incorporated Attenuator circuit ultrasonic testing
US4257061A (en) * 1977-10-17 1981-03-17 John Fluke Mfg. Co., Inc. Thermally isolated monolithic semiconductor die
JPS5474820A (en) * 1977-11-28 1979-06-15 Stanley Electric Co Ltd Anticlouding apparatus
US4275362A (en) * 1979-03-16 1981-06-23 Rca Corporation Gain controlled amplifier using a pin diode
US4500845A (en) * 1983-03-15 1985-02-19 Texas Instruments Incorporated Programmable attenuator
JPS60126643A (ja) * 1983-12-13 1985-07-06 Matsushita Electric Ind Co Ltd 印刷媒体
US4738933A (en) * 1985-08-27 1988-04-19 Fei Microwave, Inc. Monolithic PIN diode and method for its manufacture
DE3675611D1 (de) * 1985-08-31 1990-12-20 Licentia Gmbh Verfahren zum herstellen eines beidseitig kontaktierten halbleiterkoerpers.
US4786828A (en) * 1987-05-15 1988-11-22 Hoffman Charles R Bias scheme for achieving voltage independent capacitance
US6835967B2 (en) * 2003-03-25 2004-12-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor diodes with fin structure
US20080191260A1 (en) * 2004-10-05 2008-08-14 Koninklijke Philips Electronics N.V. Semiconductor Device And Use Thereof

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT270747B (de) * 1963-12-17 1969-05-12 Western Electric Co Verfahren zum Herstellen von mechanisch abgestützten, elektrisch leitenden Anschlüssen an Halbleiterscheiben
DE1514453A1 (de) * 1965-04-26 1969-08-14 Siemens Ag Verfahren zum Herstellen von Halbleiterschaltungen
FR1540051A (fr) * 1966-09-21 1968-09-20 Rca Corp Microcircuit et son procédé de fabrication
US3518585A (en) * 1966-12-30 1970-06-30 Texas Instruments Inc Voltage controlled a.c. signal attenuator
US3475700A (en) * 1966-12-30 1969-10-28 Texas Instruments Inc Monolithic microwave duplexer switch
US3549960A (en) * 1967-12-20 1970-12-22 Massachusetts Inst Technology Thermo-photovoltaic converter having back-surface junctions
FR2014743A1 ( ) * 1968-07-26 1970-04-17 Signetics Corp
NL159822B (nl) * 1969-01-02 1979-03-15 Philips Nv Halfgeleiderinrichting.
JPS4828958B1 ( ) * 1969-07-22 1973-09-06
FR2071043A5 ( ) * 1969-12-16 1971-09-17 Thomson Csf
US3714473A (en) * 1971-05-12 1973-01-30 Bell Telephone Labor Inc Planar semiconductor device utilizing confined charge carrier beams
DE2203247C3 (de) * 1972-01-24 1980-02-28 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiterbauelement mit steuerbarer Dämpfung sowie Schaltungsanordnung zu dessen Betrieb

Also Published As

Publication number Publication date
ES420364A1 (es) 1976-04-16
JPS5227031B2 ( ) 1977-07-18
BR7308693D0 (pt) 1974-08-22
ATA936373A (de) 1979-06-15
IN140549B ( ) 1976-11-27
SE391997B (sv) 1977-03-07
IT996919B (it) 1975-12-10
US4143383A (en) 1979-03-06
FR2206589B1 ( ) 1978-02-24
DE2353770A1 (de) 1974-05-16
CA1006274A (en) 1977-03-01
AU6232073A (en) 1975-05-15
JPS50772A ( ) 1975-01-07
DE2353770C3 (de) 1982-03-25
DE2353770B2 (de) 1981-07-16
CH574165A5 ( ) 1976-03-31
BE807079A (nl) 1974-05-08
FR2206589A1 ( ) 1974-06-07
GB1445724A (en) 1976-08-11

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Legal Events

Date Code Title Description
BI The patent application has been withdrawn