NL7210121A - - Google Patents
Info
- Publication number
- NL7210121A NL7210121A NL7210121A NL7210121A NL7210121A NL 7210121 A NL7210121 A NL 7210121A NL 7210121 A NL7210121 A NL 7210121A NL 7210121 A NL7210121 A NL 7210121A NL 7210121 A NL7210121 A NL 7210121A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/113—Nitrides of boron or aluminum or gallium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16509771A | 1971-07-22 | 1971-07-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7210121A true NL7210121A (https=) | 1973-01-24 |
Family
ID=22597409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7210121A NL7210121A (https=) | 1971-07-22 | 1972-07-21 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3683240A (https=) |
| JP (1) | JPS5116320B1 (https=) |
| AU (1) | AU461505B2 (https=) |
| CA (1) | CA963969A (https=) |
| DE (1) | DE2234590A1 (https=) |
| FR (1) | FR2146407B1 (https=) |
| GB (1) | GB1397643A (https=) |
| IT (1) | IT956672B (https=) |
| NL (1) | NL7210121A (https=) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3852796A (en) * | 1972-06-08 | 1974-12-03 | Ibm | GaN SWITCHING AND MEMORY DEVICES AND METHODS THEREFOR |
| US3740622A (en) * | 1972-07-10 | 1973-06-19 | Rca Corp | Electroluminescent semiconductor device for generating ultra violet radiation |
| US3783353A (en) * | 1972-10-27 | 1974-01-01 | Rca Corp | Electroluminescent semiconductor device capable of emitting light of three different wavelengths |
| US3849707A (en) * | 1973-03-07 | 1974-11-19 | Ibm | PLANAR GaN ELECTROLUMINESCENT DEVICE |
| US3865655A (en) * | 1973-09-24 | 1975-02-11 | Rca Corp | Method for diffusing impurities into nitride semiconductor crystals |
| US3869322A (en) * | 1973-10-15 | 1975-03-04 | Ibm | Automatic P-N junction formation during growth of a heterojunction |
| US3922703A (en) * | 1974-04-03 | 1975-11-25 | Rca Corp | Electroluminescent semiconductor device |
| US4092561A (en) * | 1975-09-22 | 1978-05-30 | Rca Corporation | Stripe contact providing a uniform current density |
| DE2738329A1 (de) * | 1976-09-06 | 1978-03-09 | Philips Nv | Elektrolumineszierende galliumnitridhalbleiteranordnung und verfahren zu deren herstellung |
| US4139858A (en) * | 1977-12-12 | 1979-02-13 | Rca Corporation | Solar cell with a gallium nitride electrode |
| JPS6055996B2 (ja) * | 1979-12-05 | 1985-12-07 | 松下電器産業株式会社 | 電場発光半導体装置 |
| FR2514566A1 (fr) * | 1982-02-02 | 1983-04-15 | Bagratishvili Givi | Dispositif emetteur de lumiere semi-conducteur a base de nitrure de gallium et procede de fabrication dudit dispositif |
| EP0277597B1 (en) * | 1987-01-31 | 1994-07-13 | Toyoda Gosei Co., Ltd. | Gallium nitride group semiconductor light emitting diode and the process of producing the same |
| US5218216A (en) * | 1987-01-31 | 1993-06-08 | Toyoda Gosei Co., Ltd. | Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same |
| JPS6439082A (en) * | 1987-08-05 | 1989-02-09 | Sharp Kk | Blue-light emitting display element |
| US4862471A (en) * | 1988-04-22 | 1989-08-29 | University Of Colorado Foundation, Inc. | Semiconductor light emitting device |
| US5290393A (en) * | 1991-01-31 | 1994-03-01 | Nichia Kagaku Kogyo K.K. | Crystal growth method for gallium nitride-based compound semiconductor |
| US5633192A (en) * | 1991-03-18 | 1997-05-27 | Boston University | Method for epitaxially growing gallium nitride layers |
| DE69229265T2 (de) * | 1991-03-18 | 1999-09-23 | Trustees Of Boston University, Boston | Verfahren zur herstellung und dotierung hochisolierender dünner schichten aus monokristallinem galliumnitrid |
| US6953703B2 (en) * | 1991-03-18 | 2005-10-11 | The Trustees Of Boston University | Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen |
| GB2277405A (en) * | 1993-04-22 | 1994-10-26 | Sharp Kk | Semiconductor colour display or detector array |
| US5661313A (en) * | 1993-09-09 | 1997-08-26 | The United States Of America As Represented By The Secretary Of The Navy | Electroluminescent device in silicon on sapphire |
| JPH10233382A (ja) * | 1997-02-17 | 1998-09-02 | Hewlett Packard Co <Hp> | 半導体の表面清浄方法 |
| US6559467B2 (en) | 1997-11-18 | 2003-05-06 | Technologies And Devices International, Inc. | P-n heterojunction-based structures utilizing HVPE grown III-V compound layers |
| US6599133B2 (en) | 1997-11-18 | 2003-07-29 | Technologies And Devices International, Inc. | Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques |
| US6479839B2 (en) | 1997-11-18 | 2002-11-12 | Technologies & Devices International, Inc. | III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer |
| US6555452B2 (en) | 1997-11-18 | 2003-04-29 | Technologies And Devices International, Inc. | Method for growing p-type III-V compound material utilizing HVPE techniques |
| US6476420B2 (en) | 1997-11-18 | 2002-11-05 | Technologies And Devices International, Inc. | P-N homojunction-based structures utilizing HVPE growth III-V compound layers |
| US6559038B2 (en) | 1997-11-18 | 2003-05-06 | Technologies And Devices International, Inc. | Method for growing p-n heterojunction-based structures utilizing HVPE techniques |
| US20020047135A1 (en) * | 1997-11-18 | 2002-04-25 | Nikolaev Audrey E. | P-N junction-based structures utilizing HVPE grown III-V compound layers |
| US6472300B2 (en) | 1997-11-18 | 2002-10-29 | Technologies And Devices International, Inc. | Method for growing p-n homojunction-based structures utilizing HVPE techniques |
| US6849862B2 (en) * | 1997-11-18 | 2005-02-01 | Technologies And Devices International, Inc. | III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer |
| US6218269B1 (en) | 1997-11-18 | 2001-04-17 | Technology And Devices International, Inc. | Process for producing III-V nitride pn junctions and p-i-n junctions |
| US6890809B2 (en) * | 1997-11-18 | 2005-05-10 | Technologies And Deviles International, Inc. | Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device |
| US7198970B2 (en) * | 2004-01-23 | 2007-04-03 | The United States Of America As Represented By The Secretary Of The Navy | Technique for perfecting the active regions of wide bandgap semiconductor nitride devices |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3560275A (en) * | 1968-11-08 | 1971-02-02 | Rca Corp | Fabricating semiconductor devices |
-
1971
- 1971-07-22 US US165097A patent/US3683240A/en not_active Expired - Lifetime
-
1972
- 1972-06-09 CA CA144,392A patent/CA963969A/en not_active Expired
- 1972-06-17 IT IT25838/72A patent/IT956672B/it active
- 1972-07-06 AU AU44283/72A patent/AU461505B2/en not_active Expired
- 1972-07-11 GB GB3243572A patent/GB1397643A/en not_active Expired
- 1972-07-14 DE DE2234590A patent/DE2234590A1/de active Pending
- 1972-07-20 FR FR7226131A patent/FR2146407B1/fr not_active Expired
- 1972-07-21 JP JP7379072A patent/JPS5116320B1/ja active Pending
- 1972-07-21 NL NL7210121A patent/NL7210121A/xx not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| DE2234590A1 (de) | 1973-02-01 |
| US3683240A (en) | 1972-08-08 |
| IT956672B (it) | 1973-10-10 |
| GB1397643A (en) | 1975-06-11 |
| FR2146407A1 (https=) | 1973-03-02 |
| AU461505B2 (en) | 1975-05-29 |
| FR2146407B1 (https=) | 1976-10-29 |
| CA963969A (en) | 1975-03-04 |
| AU4428372A (en) | 1974-01-10 |
| JPS5116320B1 (https=) | 1976-05-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BV | The patent application has lapsed |