NL7208261A - - Google Patents
Info
- Publication number
- NL7208261A NL7208261A NL7208261A NL7208261A NL7208261A NL 7208261 A NL7208261 A NL 7208261A NL 7208261 A NL7208261 A NL 7208261A NL 7208261 A NL7208261 A NL 7208261A NL 7208261 A NL7208261 A NL 7208261A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02581—Transition metal or rare earth elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15455371A | 1971-06-18 | 1971-06-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
NL7208261A true NL7208261A (de) | 1972-12-20 |
NL176379C NL176379C (nl) | 1985-04-01 |
Family
ID=22551786
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL190774D NL190774A (de) | 1971-06-18 | ||
NLAANVRAGE7208261,A NL176379C (nl) | 1971-06-18 | 1972-06-16 | Werkwijze voor het op een substraat van monokristallijn halfgeleidermateriaal afzetten van monokristallijn halfgeleidermateriaal met een kristalrooster dat vrijwel overeenkomt met het kristalrooster van het halfgeleidermateriaal van het substraat. |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL190774D NL190774A (de) | 1971-06-18 |
Country Status (8)
Country | Link |
---|---|
US (1) | US3692593A (de) |
JP (1) | JPS5132530B1 (de) |
CA (1) | CA955832A (de) |
DE (1) | DE2227883C2 (de) |
FR (1) | FR2142010B1 (de) |
GB (1) | GB1375269A (de) |
IT (1) | IT955495B (de) |
NL (2) | NL176379C (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3727115A (en) * | 1972-03-24 | 1973-04-10 | Ibm | Semiconductor electroluminescent diode comprising a ternary compound of gallium, thallium, and phosphorous |
NL7306004A (de) * | 1973-05-01 | 1974-11-05 | ||
CA1049127A (en) * | 1974-03-05 | 1979-02-20 | Kunio Itoh | Semiconductor devices with improved heat radiation and current concentration |
JPS5329508B2 (de) * | 1974-03-27 | 1978-08-21 | ||
US4008106A (en) * | 1975-11-13 | 1977-02-15 | The United States Of America As Represented By The Secretary Of The Army | Method of fabricating III-V photocathodes |
US4273609A (en) * | 1978-10-25 | 1981-06-16 | Sperry Corporation | Rinse melt for LPE crystals |
US4233090A (en) * | 1979-06-28 | 1980-11-11 | Rca Corporation | Method of making a laser diode |
US4373989A (en) * | 1981-11-30 | 1983-02-15 | Beggs James M Administrator Of | Controlled in situ etch-back |
DE3345214A1 (de) * | 1983-12-14 | 1985-06-27 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Diode |
US5185288A (en) * | 1988-08-26 | 1993-02-09 | Hewlett-Packard Company | Epitaxial growth method |
KR900013612A (ko) * | 1989-02-17 | 1990-09-05 | 프레데릭 얀 스미트 | 두 물체의 연결 방법 및 장치 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3429756A (en) * | 1965-02-05 | 1969-02-25 | Monsanto Co | Method for the preparation of inorganic single crystal and polycrystalline electronic materials |
US3537029A (en) * | 1968-06-10 | 1970-10-27 | Rca Corp | Semiconductor laser producing light at two wavelengths simultaneously |
US3565702A (en) * | 1969-02-14 | 1971-02-23 | Rca Corp | Depositing successive epitaxial semiconductive layers from the liquid phase |
-
0
- NL NL190774D patent/NL190774A/xx unknown
-
1971
- 1971-06-18 US US154553A patent/US3692593A/en not_active Expired - Lifetime
-
1972
- 1972-05-01 CA CA141,017A patent/CA955832A/en not_active Expired
- 1972-05-13 IT IT24323/72A patent/IT955495B/it active
- 1972-06-08 DE DE2227883A patent/DE2227883C2/de not_active Expired
- 1972-06-09 GB GB2719472A patent/GB1375269A/en not_active Expired
- 1972-06-15 JP JP5999172A patent/JPS5132530B1/ja active Pending
- 1972-06-16 NL NLAANVRAGE7208261,A patent/NL176379C/xx not_active IP Right Cessation
- 1972-06-16 FR FR7221783A patent/FR2142010B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2142010A1 (de) | 1973-01-26 |
CA955832A (en) | 1974-10-08 |
JPS5132530B1 (de) | 1976-09-13 |
DE2227883C2 (de) | 1983-11-24 |
IT955495B (it) | 1973-09-29 |
FR2142010B1 (de) | 1977-12-23 |
NL190774A (de) | |
US3692593A (en) | 1972-09-19 |
NL176379C (nl) | 1985-04-01 |
GB1375269A (de) | 1974-11-27 |
DE2227883A1 (de) | 1972-12-21 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
BA | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
V1 | Lapsed because of non-payment of the annual fee |