NL7202894A - - Google Patents

Info

Publication number
NL7202894A
NL7202894A NL7202894A NL7202894A NL7202894A NL 7202894 A NL7202894 A NL 7202894A NL 7202894 A NL7202894 A NL 7202894A NL 7202894 A NL7202894 A NL 7202894A NL 7202894 A NL7202894 A NL 7202894A
Authority
NL
Netherlands
Application number
NL7202894A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7202894A publication Critical patent/NL7202894A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
NL7202894A 1971-03-08 1972-03-03 NL7202894A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12190771A 1971-03-08 1971-03-08

Publications (1)

Publication Number Publication Date
NL7202894A true NL7202894A (xx) 1972-09-12

Family

ID=22399470

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7202894A NL7202894A (xx) 1971-03-08 1972-03-03

Country Status (6)

Country Link
US (1) US3742319A (xx)
JP (1) JPS4857585A (xx)
DE (1) DE2210599A1 (xx)
GB (1) GB1360752A (xx)
IT (1) IT950006B (xx)
NL (1) NL7202894A (xx)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3896475A (en) * 1972-01-28 1975-07-22 Philips Corp Semiconductor device comprising resistance region having portions lateral to conductors
US3997910A (en) * 1975-02-26 1976-12-14 Rca Corporation Semiconductor device with solder conductive paths
US4291319A (en) * 1976-05-19 1981-09-22 National Semiconductor Corporation Open base bipolar transistor protective device
US4194174A (en) * 1978-06-19 1980-03-18 Microwave Semiconductor Corp. Method for fabricating ballasted finger electrode
DE3406537A1 (de) * 1984-02-23 1985-08-29 Brown, Boveri & Cie Ag, 6800 Mannheim Anordnung eines leistungshalbleiterbauelementes auf einem isolierenden und mit leiterbahnen versehenen substrat
JPH0611053B2 (ja) * 1984-12-20 1994-02-09 三菱電機株式会社 半導体装置の製造方法
DE3688711T2 (de) * 1985-03-07 1993-12-16 Toshiba Kawasaki Kk Integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung.
US5280188A (en) * 1985-03-07 1994-01-18 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor integrated circuit device having at least one bipolar transistor and a plurality of MOS transistors
US5488252A (en) * 1994-08-16 1996-01-30 Telefonaktiebolaget L M Erricsson Layout for radio frequency power transistors
US7398054B2 (en) * 2003-08-29 2008-07-08 Zih Corp. Spatially selective UHF near field microstrip coupler device and RFID systems using device
US8596532B2 (en) * 2004-06-10 2013-12-03 Zih Corp. Apparatus and method for communicating with an RFID transponder
US9108434B2 (en) * 2007-12-18 2015-08-18 Zih Corp. RFID near-field antenna and associated systems

Also Published As

Publication number Publication date
JPS4857585A (xx) 1973-08-13
US3742319A (en) 1973-06-26
DE2210599A1 (de) 1972-09-28
GB1360752A (en) 1974-07-24
IT950006B (it) 1973-06-20

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