JPS4857585A - - Google Patents
Info
- Publication number
- JPS4857585A JPS4857585A JP47023867A JP2386772A JPS4857585A JP S4857585 A JPS4857585 A JP S4857585A JP 47023867 A JP47023867 A JP 47023867A JP 2386772 A JP2386772 A JP 2386772A JP S4857585 A JPS4857585 A JP S4857585A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12190771A | 1971-03-08 | 1971-03-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4857585A true JPS4857585A (ja) | 1973-08-13 |
Family
ID=22399470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP47023867A Pending JPS4857585A (ja) | 1971-03-08 | 1972-03-08 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3742319A (ja) |
| JP (1) | JPS4857585A (ja) |
| DE (1) | DE2210599A1 (ja) |
| GB (1) | GB1360752A (ja) |
| IT (1) | IT950006B (ja) |
| NL (1) | NL7202894A (ja) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3896475A (en) * | 1972-01-28 | 1975-07-22 | Philips Corp | Semiconductor device comprising resistance region having portions lateral to conductors |
| US3997910A (en) * | 1975-02-26 | 1976-12-14 | Rca Corporation | Semiconductor device with solder conductive paths |
| US4291319A (en) * | 1976-05-19 | 1981-09-22 | National Semiconductor Corporation | Open base bipolar transistor protective device |
| US4194174A (en) * | 1978-06-19 | 1980-03-18 | Microwave Semiconductor Corp. | Method for fabricating ballasted finger electrode |
| DE3406537A1 (de) * | 1984-02-23 | 1985-08-29 | Brown, Boveri & Cie Ag, 6800 Mannheim | Anordnung eines leistungshalbleiterbauelementes auf einem isolierenden und mit leiterbahnen versehenen substrat |
| JPH0611053B2 (ja) * | 1984-12-20 | 1994-02-09 | 三菱電機株式会社 | 半導体装置の製造方法 |
| US5280188A (en) * | 1985-03-07 | 1994-01-18 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor integrated circuit device having at least one bipolar transistor and a plurality of MOS transistors |
| DE3688711T2 (de) * | 1985-03-07 | 1993-12-16 | Toshiba Kawasaki Kk | Integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung. |
| US5488252A (en) * | 1994-08-16 | 1996-01-30 | Telefonaktiebolaget L M Erricsson | Layout for radio frequency power transistors |
| US7398054B2 (en) | 2003-08-29 | 2008-07-08 | Zih Corp. | Spatially selective UHF near field microstrip coupler device and RFID systems using device |
| US8596532B2 (en) | 2004-06-10 | 2013-12-03 | Zih Corp. | Apparatus and method for communicating with an RFID transponder |
| US9108434B2 (en) * | 2007-12-18 | 2015-08-18 | Zih Corp. | RFID near-field antenna and associated systems |
-
1971
- 1971-03-08 US US00121907A patent/US3742319A/en not_active Expired - Lifetime
-
1972
- 1972-03-03 NL NL7202894A patent/NL7202894A/xx unknown
- 1972-03-03 GB GB1003772A patent/GB1360752A/en not_active Expired
- 1972-03-04 DE DE19722210599 patent/DE2210599A1/de active Pending
- 1972-03-08 JP JP47023867A patent/JPS4857585A/ja active Pending
- 1972-03-08 IT IT21592/72A patent/IT950006B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| DE2210599A1 (de) | 1972-09-28 |
| IT950006B (it) | 1973-06-20 |
| NL7202894A (ja) | 1972-09-12 |
| GB1360752A (en) | 1974-07-24 |
| US3742319A (en) | 1973-06-26 |