NL7201080A - - Google Patents

Info

Publication number
NL7201080A
NL7201080A NL7201080A NL7201080A NL7201080A NL 7201080 A NL7201080 A NL 7201080A NL 7201080 A NL7201080 A NL 7201080A NL 7201080 A NL7201080 A NL 7201080A NL 7201080 A NL7201080 A NL 7201080A
Authority
NL
Netherlands
Application number
NL7201080A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7201080A publication Critical patent/NL7201080A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/60Capacitors
    • H10D1/62Capacitors having potential barriers
    • H10D1/64Variable-capacitance diodes, e.g. varactors 
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/049Equivalence and options
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/098Layer conversion
NL7201080A 1971-02-02 1972-01-26 NL7201080A (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2104752A DE2104752B2 (de) 1971-02-02 1971-02-02 Verfahren zum Herstellen einer Halbleiter-Kapazitätsdiode

Publications (1)

Publication Number Publication Date
NL7201080A true NL7201080A (https=) 1972-08-04

Family

ID=5797592

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7201080A NL7201080A (https=) 1971-02-02 1972-01-26

Country Status (14)

Country Link
US (2) US3764415A (https=)
JP (1) JPS5313956B1 (https=)
AU (1) AU463889B2 (https=)
BE (1) BE778757A (https=)
BR (1) BR7200528D0 (https=)
CA (1) CA954235A (https=)
CH (1) CH538195A (https=)
DE (1) DE2104752B2 (https=)
ES (1) ES399322A1 (https=)
FR (1) FR2124340B1 (https=)
GB (1) GB1379975A (https=)
IT (1) IT948960B (https=)
NL (1) NL7201080A (https=)
SE (1) SE366607B (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2108781B1 (https=) * 1970-10-05 1974-10-31 Radiotechnique Compelec
US3935585A (en) * 1972-08-22 1976-01-27 Korovin Stanislav Konstantinov Semiconductor diode with voltage-dependent capacitance
GB1459231A (en) * 1973-06-26 1976-12-22 Mullard Ltd Semiconductor devices
US3945029A (en) * 1974-03-19 1976-03-16 Sergei Fedorovich Kausov Semiconductor diode with layers of different but related resistivities
DE2833318C2 (de) * 1978-07-29 1983-03-10 Philips Patentverwaltung Gmbh, 2000 Hamburg Kapazitätsdiode
US4226648A (en) * 1979-03-16 1980-10-07 Bell Telephone Laboratories, Incorporated Method of making a hyperabrupt varactor diode utilizing molecular beam epitaxy
US4369072A (en) * 1981-01-22 1983-01-18 International Business Machines Corp. Method for forming IGFET devices having improved drain voltage characteristics
US4381952A (en) * 1981-05-11 1983-05-03 Rca Corporation Method for fabricating a low loss varactor diode
JP2573201B2 (ja) * 1987-02-26 1997-01-22 株式会社東芝 半導体素子の拡散層形成方法
JPS6459874A (en) * 1987-08-31 1989-03-07 Toko Inc Manufacture of variable-capacitance diode
US4903086A (en) * 1988-01-19 1990-02-20 E-Systems, Inc. Varactor tuning diode with inversion layer
US5557140A (en) * 1995-04-12 1996-09-17 Hughes Aircraft Company Process tolerant, high-voltage, bi-level capacitance varactor diode
US5789801A (en) * 1995-11-09 1998-08-04 Endgate Corporation Varactor with electrostatic barrier
EP1139434A3 (en) 2000-03-29 2003-12-10 Tyco Electronics Corporation Variable capacity diode with hyperabrubt junction profile
EP1791183A1 (en) * 2005-11-24 2007-05-30 Technische Universiteit Delft Varactor element and low distortion varactor circuit arrangement
JP5180091B2 (ja) * 2005-11-24 2013-04-10 テクニシェ・ウニフェルシテイト・デルフト バラクタ素子および低歪バラクタ回路装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3249831A (en) * 1963-01-04 1966-05-03 Westinghouse Electric Corp Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient
US3523838A (en) * 1967-05-09 1970-08-11 Motorola Inc Variable capacitance diode

Also Published As

Publication number Publication date
US3764415A (en) 1973-10-09
DE2104752A1 (de) 1972-08-10
SE366607B (https=) 1974-04-29
JPS5313956B1 (https=) 1978-05-13
GB1379975A (en) 1975-01-08
DE2104752B2 (de) 1975-02-20
IT948960B (it) 1973-06-11
CA954235A (en) 1974-09-03
BE778757A (fr) 1972-07-31
FR2124340A1 (https=) 1972-09-22
US3840306A (en) 1974-10-08
CH538195A (de) 1973-06-15
AU3856672A (en) 1973-08-09
AU463889B2 (en) 1975-07-23
ES399322A1 (es) 1974-12-01
BR7200528D0 (pt) 1974-10-22
FR2124340B1 (https=) 1977-12-23

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Legal Events

Date Code Title Description
BI The patent application has been withdrawn