NL7116475A - - Google Patents

Info

Publication number
NL7116475A
NL7116475A NL7116475A NL7116475A NL7116475A NL 7116475 A NL7116475 A NL 7116475A NL 7116475 A NL7116475 A NL 7116475A NL 7116475 A NL7116475 A NL 7116475A NL 7116475 A NL7116475 A NL 7116475A
Authority
NL
Netherlands
Application number
NL7116475A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7116475A publication Critical patent/NL7116475A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42396Gate electrodes for field effect devices for charge coupled devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/287Organisation of a multiplicity of shift registers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866Surface Channel CCD
    • H01L29/76875Two-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Memories (AREA)
NL7116475A 1970-12-04 1971-11-30 NL7116475A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00095225A US3819959A (en) 1970-12-04 1970-12-04 Two phase charge-coupled semiconductor device

Publications (1)

Publication Number Publication Date
NL7116475A true NL7116475A (xx) 1972-06-06

Family

ID=22250770

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7116475A NL7116475A (xx) 1970-12-04 1971-11-30

Country Status (11)

Country Link
US (1) US3819959A (xx)
JP (1) JPS5026911B1 (xx)
AU (1) AU466188B2 (xx)
BE (1) BE774719A (xx)
CH (1) CH563648A5 (xx)
ES (1) ES397416A1 (xx)
FR (1) FR2116384B1 (xx)
GB (1) GB1369606A (xx)
IT (1) IT940695B (xx)
NL (1) NL7116475A (xx)
SE (1) SE379600B (xx)

Families Citing this family (220)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4646119A (en) * 1971-01-14 1987-02-24 Rca Corporation Charge coupled circuits
US3967306A (en) * 1973-08-01 1976-06-29 Trw Inc. Asymmetrical well charge coupled device
DE2400208A1 (de) * 1974-01-03 1975-07-17 Siemens Ag Ladungsgekoppelte uebertragungsanordnung bei der zur ladungsuebertragung majoritaetstraeger verwendet werden
US4035665A (en) * 1974-01-24 1977-07-12 Commissariat A L'energie Atomique Charge-coupled device comprising semiconductors having different forbidden band widths
CA1023050A (en) * 1974-05-16 1977-12-20 Western Electric Company, Incorporated Charge transfer delay line filters
DE2427173B2 (de) * 1974-06-05 1976-10-21 Siemens AG, 1000 Berlin und 8000 München Einrichtung zum verschieben von ladungen nach freier wahl in eine vorgegebene richtung oder in die entgegengesetzte richtung und zum speichern von ladungen mit einer ladungsgekoppelten ladungsverschiebeanordnung
US4148132A (en) * 1974-11-27 1979-04-10 Trw Inc. Method of fabricating a two-phase charge coupled device
JPS53142814U (xx) * 1977-04-14 1978-11-11
US4230954A (en) * 1978-12-29 1980-10-28 International Business Machines Corporation Permanent or semipermanent charge transfer storage systems
US4300210A (en) * 1979-12-27 1981-11-10 International Business Machines Corp. Calibrated sensing system
US4951302A (en) * 1988-06-30 1990-08-21 Tektronix, Inc. Charge-coupled device shift register
FR2870037B1 (fr) * 2004-05-04 2006-07-14 Commissariat Energie Atomique Systeme d'enregistrement d'informations et procede d'utilisation d'un tel systeme
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SE379600B (xx) 1975-10-13
US3819959A (en) 1974-06-25
GB1369606A (en) 1974-10-09
DE2158605B2 (de) 1975-12-18
IT940695B (it) 1973-02-20
AU466188B2 (en) 1975-10-23
DE2158605A1 (de) 1972-06-22
FR2116384A1 (xx) 1972-07-13
CH563648A5 (xx) 1975-06-30
JPS5026911B1 (xx) 1975-09-04
ES397416A1 (es) 1974-05-16
AU3530071A (en) 1973-05-10
FR2116384B1 (xx) 1974-05-31
BE774719A (fr) 1972-02-14

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