NL7112793A - - Google Patents

Info

Publication number
NL7112793A
NL7112793A NL7112793A NL7112793A NL7112793A NL 7112793 A NL7112793 A NL 7112793A NL 7112793 A NL7112793 A NL 7112793A NL 7112793 A NL7112793 A NL 7112793A NL 7112793 A NL7112793 A NL 7112793A
Authority
NL
Netherlands
Application number
NL7112793A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7112793A publication Critical patent/NL7112793A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2254Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F15FLUID-PRESSURE ACTUATORS; HYDRAULICS OR PNEUMATICS IN GENERAL
    • F15CFLUID-CIRCUIT ELEMENTS PREDOMINANTLY USED FOR COMPUTING OR CONTROL PURPOSES
    • F15C4/00Circuit elements characterised by their special functions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00Compositions
    • Y10S252/95Doping agent source material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Fluid Mechanics (AREA)
  • Mechanical Engineering (AREA)
  • Silicon Compounds (AREA)
  • Feedback Control In General (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Formation Of Insulating Films (AREA)
NL7112793A 1970-09-21 1971-09-17 NL7112793A (cs)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7420470A 1970-09-21 1970-09-21
DE2146964A DE2146964A1 (de) 1970-09-21 1971-09-20 Fluidischer steuerkreis

Publications (1)

Publication Number Publication Date
NL7112793A true NL7112793A (cs) 1972-03-23

Family

ID=25761761

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7112793A NL7112793A (cs) 1970-09-21 1971-09-17

Country Status (3)

Country Link
US (1) US3658584A (cs)
DE (2) DE2146964A1 (cs)
NL (1) NL7112793A (cs)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3755015A (en) * 1971-12-10 1973-08-28 Gen Electric Anti-reflection coating for semiconductor diode array targets
US4007476A (en) * 1975-04-21 1977-02-08 Hutson Jearld L Technique for passivating semiconductor devices
US4236948A (en) * 1979-03-09 1980-12-02 Demetron Gesellschaft Fur Elektronik Werkstoffe Mbh Process for doping semiconductor crystals
US4619719A (en) * 1982-01-28 1986-10-28 Owens-Illinois, Inc. Process for forming a doped oxide film and composite article
US4605450A (en) * 1982-02-11 1986-08-12 Owens-Illinois, Inc. Process for forming a doped oxide film and doped semiconductor
US4571366A (en) * 1982-02-11 1986-02-18 Owens-Illinois, Inc. Process for forming a doped oxide film and doped semiconductor
US4490192A (en) * 1983-06-08 1984-12-25 Allied Corporation Stable suspensions of boron, phosphorus, antimony and arsenic dopants
US4588455A (en) * 1984-08-15 1986-05-13 Emulsitone Company Planar diffusion source
US5198298A (en) * 1989-10-24 1993-03-30 Advanced Micro Devices, Inc. Etch stop layer using polymers
CA2009518C (en) * 1990-02-07 2000-10-17 Luc Ouellet Spin-on glass processing technique for the fabrication of semiconductor device
US5116781A (en) * 1990-08-17 1992-05-26 Eastman Kodak Company Zinc diffusion process
JPH08119787A (ja) * 1994-10-14 1996-05-14 Komatsu Electron Metals Co Ltd 連続チャージ法におけるドーパント供給方法およびドーパント組成物
SG77608A1 (en) * 1997-10-03 2001-01-16 Inst Data Storage Improvements relating to optical memories using electron trapping material
EP1192640A2 (en) * 1999-06-03 2002-04-03 GENERAL SEMICONDUCTOR, Inc. Power mosfet and method of making the same
US6653718B2 (en) 2001-01-11 2003-11-25 Honeywell International, Inc. Dielectric films for narrow gap-fill applications
US6444495B1 (en) * 2001-01-11 2002-09-03 Honeywell International, Inc. Dielectric films for narrow gap-fill applications
US6967172B2 (en) * 2002-07-03 2005-11-22 Honeywell International Inc. Colloidal silica composite films for premetal dielectric applications
US7203064B2 (en) * 2003-12-12 2007-04-10 Intel Corporation Heat exchanger with cooling channels having varying geometry
CN101048532A (zh) * 2004-10-29 2007-10-03 陶氏环球技术公司 改进的沉积速率等离子体增强化学气相方法
JP5026008B2 (ja) * 2006-07-14 2012-09-12 東京応化工業株式会社 膜形成組成物
US20080057686A1 (en) * 2006-08-31 2008-03-06 Melgaard Hans L Continuous dopant addition
DE102007020039B4 (de) * 2007-04-27 2011-07-14 Infineon Technologies Austria Ag Verfahren zur Herstellung einer vertikal inhomogenen Platin- oder Goldverteilung in einem Halbleitersubstrat und in einem Halbleiterbauelement, derart hergestelltes Halbleitersubstrat und Halbleiterbauelement

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1644003A1 (de) * 1967-04-20 1970-09-24 Siemens Ag Verfahren zum Dotieren von Halbleiterkristallen

Also Published As

Publication number Publication date
DE2146964A1 (de) 1973-03-29
DE2146954A1 (de) 1972-03-30
US3658584A (en) 1972-04-25

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