NL7112793A - - Google Patents
Info
- Publication number
- NL7112793A NL7112793A NL7112793A NL7112793A NL7112793A NL 7112793 A NL7112793 A NL 7112793A NL 7112793 A NL7112793 A NL 7112793A NL 7112793 A NL7112793 A NL 7112793A NL 7112793 A NL7112793 A NL 7112793A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F15—FLUID-PRESSURE ACTUATORS; HYDRAULICS OR PNEUMATICS IN GENERAL
- F15C—FLUID-CIRCUIT ELEMENTS PREDOMINANTLY USED FOR COMPUTING OR CONTROL PURPOSES
- F15C4/00—Circuit elements characterised by their special functions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Theoretical Computer Science (AREA)
- Fluid Mechanics (AREA)
- Mechanical Engineering (AREA)
- Silicon Compounds (AREA)
- Feedback Control In General (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7420470A | 1970-09-21 | 1970-09-21 | |
| DE2146964A DE2146964A1 (de) | 1970-09-21 | 1971-09-20 | Fluidischer steuerkreis |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7112793A true NL7112793A (cs) | 1972-03-23 |
Family
ID=25761761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7112793A NL7112793A (cs) | 1970-09-21 | 1971-09-17 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3658584A (cs) |
| DE (2) | DE2146964A1 (cs) |
| NL (1) | NL7112793A (cs) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3755015A (en) * | 1971-12-10 | 1973-08-28 | Gen Electric | Anti-reflection coating for semiconductor diode array targets |
| US4007476A (en) * | 1975-04-21 | 1977-02-08 | Hutson Jearld L | Technique for passivating semiconductor devices |
| US4236948A (en) * | 1979-03-09 | 1980-12-02 | Demetron Gesellschaft Fur Elektronik Werkstoffe Mbh | Process for doping semiconductor crystals |
| US4619719A (en) * | 1982-01-28 | 1986-10-28 | Owens-Illinois, Inc. | Process for forming a doped oxide film and composite article |
| US4605450A (en) * | 1982-02-11 | 1986-08-12 | Owens-Illinois, Inc. | Process for forming a doped oxide film and doped semiconductor |
| US4571366A (en) * | 1982-02-11 | 1986-02-18 | Owens-Illinois, Inc. | Process for forming a doped oxide film and doped semiconductor |
| US4490192A (en) * | 1983-06-08 | 1984-12-25 | Allied Corporation | Stable suspensions of boron, phosphorus, antimony and arsenic dopants |
| US4588455A (en) * | 1984-08-15 | 1986-05-13 | Emulsitone Company | Planar diffusion source |
| US5198298A (en) * | 1989-10-24 | 1993-03-30 | Advanced Micro Devices, Inc. | Etch stop layer using polymers |
| CA2009518C (en) * | 1990-02-07 | 2000-10-17 | Luc Ouellet | Spin-on glass processing technique for the fabrication of semiconductor device |
| US5116781A (en) * | 1990-08-17 | 1992-05-26 | Eastman Kodak Company | Zinc diffusion process |
| JPH08119787A (ja) * | 1994-10-14 | 1996-05-14 | Komatsu Electron Metals Co Ltd | 連続チャージ法におけるドーパント供給方法およびドーパント組成物 |
| SG77608A1 (en) * | 1997-10-03 | 2001-01-16 | Inst Data Storage | Improvements relating to optical memories using electron trapping material |
| EP1192640A2 (en) * | 1999-06-03 | 2002-04-03 | GENERAL SEMICONDUCTOR, Inc. | Power mosfet and method of making the same |
| US6653718B2 (en) | 2001-01-11 | 2003-11-25 | Honeywell International, Inc. | Dielectric films for narrow gap-fill applications |
| US6444495B1 (en) * | 2001-01-11 | 2002-09-03 | Honeywell International, Inc. | Dielectric films for narrow gap-fill applications |
| US6967172B2 (en) * | 2002-07-03 | 2005-11-22 | Honeywell International Inc. | Colloidal silica composite films for premetal dielectric applications |
| US7203064B2 (en) * | 2003-12-12 | 2007-04-10 | Intel Corporation | Heat exchanger with cooling channels having varying geometry |
| CN101048532A (zh) * | 2004-10-29 | 2007-10-03 | 陶氏环球技术公司 | 改进的沉积速率等离子体增强化学气相方法 |
| JP5026008B2 (ja) * | 2006-07-14 | 2012-09-12 | 東京応化工業株式会社 | 膜形成組成物 |
| US20080057686A1 (en) * | 2006-08-31 | 2008-03-06 | Melgaard Hans L | Continuous dopant addition |
| DE102007020039B4 (de) * | 2007-04-27 | 2011-07-14 | Infineon Technologies Austria Ag | Verfahren zur Herstellung einer vertikal inhomogenen Platin- oder Goldverteilung in einem Halbleitersubstrat und in einem Halbleiterbauelement, derart hergestelltes Halbleitersubstrat und Halbleiterbauelement |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1644003A1 (de) * | 1967-04-20 | 1970-09-24 | Siemens Ag | Verfahren zum Dotieren von Halbleiterkristallen |
-
1970
- 1970-09-21 US US74204A patent/US3658584A/en not_active Expired - Lifetime
-
1971
- 1971-09-17 NL NL7112793A patent/NL7112793A/xx unknown
- 1971-09-20 DE DE2146964A patent/DE2146964A1/de active Pending
- 1971-09-20 DE DE19712146954 patent/DE2146954A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2146964A1 (de) | 1973-03-29 |
| DE2146954A1 (de) | 1972-03-30 |
| US3658584A (en) | 1972-04-25 |