NL7106777A - - Google Patents

Info

Publication number
NL7106777A
NL7106777A NL7106777A NL7106777A NL7106777A NL 7106777 A NL7106777 A NL 7106777A NL 7106777 A NL7106777 A NL 7106777A NL 7106777 A NL7106777 A NL 7106777A NL 7106777 A NL7106777 A NL 7106777A
Authority
NL
Netherlands
Application number
NL7106777A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7106777A publication Critical patent/NL7106777A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • H10D10/01Manufacture or treatment
    • H10D10/051Manufacture or treatment of vertical BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137Collector regions of BJTs
    • H10D62/138Pedestal collectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/031Manufacture or treatment of isolation regions comprising PN junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30Isolation regions comprising PN junctions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/037Diffusion-deposition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/128Proton bombardment of silicon
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/151Simultaneous diffusion
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/914Doping
    • Y10S438/923Diffusion through a layer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/965Shaped junction formation
NL7106777A 1970-05-22 1971-05-18 NL7106777A (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2502970 1970-05-22

Publications (1)

Publication Number Publication Date
NL7106777A true NL7106777A (https=) 1971-11-24

Family

ID=10221069

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7106777A NL7106777A (https=) 1970-05-22 1971-05-18

Country Status (7)

Country Link
US (1) US3761319A (https=)
JP (1) JPS505022B1 (https=)
CH (1) CH530714A (https=)
DE (1) DE2124764C3 (https=)
FR (1) FR2090238B1 (https=)
GB (1) GB1307546A (https=)
NL (1) NL7106777A (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1420065A (en) * 1972-01-31 1976-01-07 Mullard Ltd Methods of manufacturing semiconductor bodies
SE361232B (https=) * 1972-11-09 1973-10-22 Ericsson Telefon Ab L M
FR2257998B1 (https=) * 1974-01-10 1976-11-26 Commissariat Energie Atomique
GB1502165A (en) * 1974-04-10 1978-02-22 Sony Corp Semiconductor devices
US3974560A (en) * 1974-05-02 1976-08-17 Rca Corporation Method of making a bipolar transistor
US3943555A (en) * 1974-05-02 1976-03-09 Rca Corporation SOS Bipolar transistor
US3982967A (en) * 1975-03-26 1976-09-28 Ibm Corporation Method of proton-enhanced diffusion for simultaneously forming integrated circuit regions of varying depths
US4157268A (en) * 1977-06-16 1979-06-05 International Business Machines Corporation Localized oxidation enhancement for an integrated injection logic circuit
US4133701A (en) * 1977-06-29 1979-01-09 General Motors Corporation Selective enhancement of phosphorus diffusion by implanting halogen ions
US4203781A (en) * 1978-12-27 1980-05-20 Bell Telephone Laboratories, Incorporated Laser deformation of semiconductor junctions
JPS57139965A (en) * 1981-02-24 1982-08-30 Toshiba Corp Manufacture of semiconductor device
US4644383A (en) * 1985-04-08 1987-02-17 Harris Corporation Subcollector for oxide and junction isolated IC's
EP0378439B1 (en) * 1989-01-13 1995-01-04 Canon Kabushiki Kaisha Recording head
US5943579A (en) * 1997-02-14 1999-08-24 Micron Technology, Inc. Method for forming a diffusion region in a semiconductor device
US6995068B1 (en) * 2000-06-09 2006-02-07 Newport Fab, Llc Double-implant high performance varactor and method for manufacturing same
DE10361134B4 (de) * 2003-12-23 2014-10-23 Infineon Technologies Ag Verfahren zur Herstellung eines p-Emitters eines IGBTs, einer Anode, einer Diode und einer Anode eines asymmetrischen Thyristors.
DE102004029945B4 (de) * 2004-06-21 2008-01-17 Infineon Technologies Ag Verfahren zur Herstellung einer oberflächennahen dotierten Zone in einem Halbleiterkörper
US20100314695A1 (en) * 2009-06-10 2010-12-16 International Rectifier Corporation Self-aligned vertical group III-V transistor and method for fabricated same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE635742A (https=) * 1962-08-03
NL6918858A (https=) * 1968-12-20 1970-06-23

Also Published As

Publication number Publication date
DE2124764B2 (de) 1978-03-30
DE2124764A1 (de) 1971-12-02
JPS505022B1 (https=) 1975-02-27
DE2124764C3 (de) 1978-11-30
FR2090238B1 (https=) 1976-06-11
US3761319A (en) 1973-09-25
GB1307546A (en) 1973-02-21
FR2090238A1 (https=) 1972-01-14
CH530714A (de) 1972-11-15

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Legal Events

Date Code Title Description
BI The patent application has been withdrawn