NL7105569A - - Google Patents
Info
- Publication number
- NL7105569A NL7105569A NL7105569A NL7105569A NL7105569A NL 7105569 A NL7105569 A NL 7105569A NL 7105569 A NL7105569 A NL 7105569A NL 7105569 A NL7105569 A NL 7105569A NL 7105569 A NL7105569 A NL 7105569A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702021345 DE2021345A1 (de) | 1970-04-30 | 1970-04-30 | Verfahren zum Herstellen von sauerstoffarmen Galliumarsenid unter Verwendung von Silicium oder Germanium als Dotierstoff |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7105569A true NL7105569A (en:Method) | 1971-11-02 |
Family
ID=5769964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7105569A NL7105569A (en:Method) | 1970-04-30 | 1971-04-23 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3725284A (en:Method) |
| AT (1) | AT315919B (en:Method) |
| CA (1) | CA954016A (en:Method) |
| CH (1) | CH542654A (en:Method) |
| DE (1) | DE2021345A1 (en:Method) |
| FR (1) | FR2090928A5 (en:Method) |
| GB (1) | GB1309347A (en:Method) |
| NL (1) | NL7105569A (en:Method) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4162293A (en) * | 1974-03-27 | 1979-07-24 | Siemens Aktiengesellschaft | Apparatus for preparation of a compound or an alloy |
| DE2414776C2 (de) * | 1974-03-27 | 1984-04-19 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum Herstellen einer Verbindung oder Legierung |
| DE2414856C2 (de) * | 1974-03-27 | 1983-01-27 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum Herstellen einer Halbleiterverbindung, insbesondere Galliumphosphid |
| FR2416729A1 (fr) * | 1978-02-09 | 1979-09-07 | Radiotechnique Compelec | Perfectionnement au procede de fabrication d'un monocristal de compose iii-v'' |
| JPS5914440B2 (ja) * | 1981-09-18 | 1984-04-04 | 住友電気工業株式会社 | ＣａＡｓ単結晶への硼素のド−ピング方法 |
| US4699688A (en) * | 1986-07-14 | 1987-10-13 | Gte Laboratories Incorporated | Method of epitaxially growing gallium arsenide on silicon |
| US4891091A (en) * | 1986-07-14 | 1990-01-02 | Gte Laboratories Incorporated | Method of epitaxially growing compound semiconductor materials |
| US5183767A (en) * | 1991-02-14 | 1993-02-02 | International Business Machines Corporation | Method for internal gettering of oxygen in iii-v compound semiconductors |
| US5272373A (en) * | 1991-02-14 | 1993-12-21 | International Business Machines Corporation | Internal gettering of oxygen in III-V compound semiconductors |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3278342A (en) * | 1963-10-14 | 1966-10-11 | Westinghouse Electric Corp | Method of growing crystalline members completely within the solution melt |
| US3560275A (en) * | 1968-11-08 | 1971-02-02 | Rca Corp | Fabricating semiconductor devices |
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1970
- 1970-04-30 DE DE19702021345 patent/DE2021345A1/de active Pending
-
1971
- 1971-04-07 CH CH510871A patent/CH542654A/de not_active IP Right Cessation
- 1971-04-20 AT AT336371A patent/AT315919B/de not_active IP Right Cessation
- 1971-04-23 NL NL7105569A patent/NL7105569A/xx unknown
- 1971-04-28 US US00138192A patent/US3725284A/en not_active Expired - Lifetime
- 1971-04-29 FR FR7115331A patent/FR2090928A5/fr not_active Expired
- 1971-04-29 GB GB1212671*[A patent/GB1309347A/en not_active Expired
- 1971-04-30 CA CA111,837A patent/CA954016A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1309347A (en) | 1973-03-07 |
| FR2090928A5 (en:Method) | 1972-01-14 |
| CA954016A (en) | 1974-09-03 |
| CH542654A (de) | 1973-10-15 |
| DE2021345A1 (de) | 1972-01-13 |
| US3725284A (en) | 1973-04-03 |
| AT315919B (de) | 1974-06-25 |