NL7104467A - - Google Patents

Info

Publication number
NL7104467A
NL7104467A NL7104467A NL7104467A NL7104467A NL 7104467 A NL7104467 A NL 7104467A NL 7104467 A NL7104467 A NL 7104467A NL 7104467 A NL7104467 A NL 7104467A NL 7104467 A NL7104467 A NL 7104467A
Authority
NL
Netherlands
Prior art keywords
electrical resistance
resistance state
memory device
high electrical
low electrical
Prior art date
Application number
NL7104467A
Other languages
English (en)
Other versions
NL151827B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7104467A publication Critical patent/NL7104467A/xx
Publication of NL151827B publication Critical patent/NL151827B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Thermistors And Varistors (AREA)
  • Paints Or Removers (AREA)
NL717104467A 1970-04-02 1971-04-02 Geheugenelement omvattende een film van een organische hars waarin looddioxydedeeltjes zijn gedispergeerd. NL151827B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45028410A JPS5012598B1 (enExample) 1970-04-02 1970-04-02

Publications (2)

Publication Number Publication Date
NL7104467A true NL7104467A (enExample) 1971-10-05
NL151827B NL151827B (nl) 1976-12-15

Family

ID=12247872

Family Applications (1)

Application Number Title Priority Date Filing Date
NL717104467A NL151827B (nl) 1970-04-02 1971-04-02 Geheugenelement omvattende een film van een organische hars waarin looddioxydedeeltjes zijn gedispergeerd.

Country Status (7)

Country Link
US (1) US3719933A (enExample)
JP (1) JPS5012598B1 (enExample)
CA (1) CA928854A (enExample)
DE (1) DE2114648C3 (enExample)
FR (1) FR2085798B1 (enExample)
GB (1) GB1352789A (enExample)
NL (1) NL151827B (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3922648A (en) * 1974-08-19 1975-11-25 Energy Conversion Devices Inc Method and means for preventing degradation of threshold voltage of filament-forming memory semiconductor device
US4396998A (en) * 1980-08-27 1983-08-02 Mobay Chemical Corporation Thermally reprogrammable memory array and a thermally reprogrammable memory cell therefor
US4642664A (en) * 1983-04-21 1987-02-10 Celanese Corporation Electrical device made of partially pryolyzed polymer
DE68913220T2 (de) * 1988-03-28 1994-07-07 Canon Kk Schaltereinrichtung und Verfahren zu ihrer Herstellung.
US6950331B2 (en) * 2000-10-31 2005-09-27 The Regents Of The University Of California Organic bistable device and organic memory cells
WO2002091496A2 (en) 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Reversible field-programmable electric interconnects
WO2002091385A1 (en) * 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Molecular memory cell
DE60220912T2 (de) * 2001-05-07 2008-02-28 Advanced Micro Devices, Inc., Sunnyvale Speichervorrichtung mit einem sich selbst einbauenden polymer und verfahren zur herstellung derselben
WO2002091495A2 (en) * 2001-05-07 2002-11-14 Coatue Corporation Molecular memory device
JP4514016B2 (ja) 2001-05-07 2010-07-28 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 複合分子材料を使用したフローティングゲートメモリデバイス
JP4731794B2 (ja) * 2001-05-07 2011-07-27 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド メモリ効果を有するスイッチ素子及び該素子をスイッチングさせる方法
KR100860134B1 (ko) 2001-08-13 2008-09-25 어드밴스드 마이크로 디바이시즈, 인코포레이티드 메모리 셀
US6838720B2 (en) * 2001-08-13 2005-01-04 Advanced Micro Devices, Inc. Memory device with active passive layers
US6768157B2 (en) 2001-08-13 2004-07-27 Advanced Micro Devices, Inc. Memory device
US6858481B2 (en) * 2001-08-13 2005-02-22 Advanced Micro Devices, Inc. Memory device with active and passive layers
US6806526B2 (en) 2001-08-13 2004-10-19 Advanced Micro Devices, Inc. Memory device
KR100433407B1 (ko) * 2002-02-06 2004-05-31 삼성광주전자 주식회사 업라이트형 진공청소기
US7012276B2 (en) * 2002-09-17 2006-03-14 Advanced Micro Devices, Inc. Organic thin film Zener diodes
US7462857B2 (en) * 2002-09-19 2008-12-09 Sharp Kabushiki Kaisha Memory device including resistance-changing function body
DE10245554B4 (de) * 2002-09-30 2008-04-10 Qimonda Ag Nanopartikel als Ladungsträgersenke in resistiven Speicherelementen
TW577194B (en) * 2002-11-08 2004-02-21 Endpoints Technology Corp Digital adjustable chip oscillator
US7482621B2 (en) * 2003-02-03 2009-01-27 The Regents Of The University Of California Rewritable nano-surface organic electrical bistable devices
US7274035B2 (en) * 2003-09-03 2007-09-25 The Regents Of The University Of California Memory devices based on electric field programmable films
US7544966B2 (en) * 2003-12-03 2009-06-09 The Regents Of The University Of California Three-terminal electrical bistable devices
WO2006001923A2 (en) * 2004-05-17 2006-01-05 The Regents Of The University Of California Bistable nanoparticle- polymer composite for use in memory devices
US7554111B2 (en) * 2004-05-20 2009-06-30 The Regents Of The University Of California Nanoparticle-polymer bistable devices
US7443710B2 (en) * 2004-09-28 2008-10-28 Spansion, Llc Control of memory devices possessing variable resistance characteristics
WO2006050052A2 (en) * 2004-10-28 2006-05-11 The Regents Of The University Of California Organic-complex thin film for nonvolatile memory applications
US9287356B2 (en) * 2005-05-09 2016-03-15 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
JP4974576B2 (ja) * 2005-04-27 2012-07-11 株式会社半導体エネルギー研究所 記憶素子、半導体装置、及び記憶素子の作製方法
US8101943B2 (en) 2005-04-27 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8183665B2 (en) * 2005-11-15 2012-05-22 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
KR101102157B1 (ko) * 2005-09-16 2012-01-02 삼성전자주식회사 금속 나노 입자를 이용한 휘발성 음저항 소자
JP2010028105A (ja) 2008-06-20 2010-02-04 Semiconductor Energy Lab Co Ltd 記憶素子及び記憶素子の作製方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3486156A (en) * 1965-08-02 1969-12-23 Ltv Aerospace Corp Electrical connection device
JPS4814351B1 (enExample) * 1968-12-02 1973-05-07
US3564353A (en) * 1969-04-16 1971-02-16 Westinghouse Electric Corp Bulk semiconductor switching device formed from amorphous glass type substance and having symmetrical switching characteristics

Also Published As

Publication number Publication date
GB1352789A (en) 1974-05-08
FR2085798B1 (enExample) 1976-09-03
NL151827B (nl) 1976-12-15
JPS5012598B1 (enExample) 1975-05-13
DE2114648B2 (de) 1973-05-10
DE2114648A1 (de) 1971-12-16
DE2114648C3 (de) 1973-12-06
FR2085798A1 (enExample) 1971-12-31
CA928854A (en) 1973-06-19
US3719933A (en) 1973-03-06

Similar Documents

Publication Publication Date Title
FR2085798B1 (enExample)
NL166824B (nl) Elektrische verbindingsinrichting.
NL139418B (nl) Inrichting voor het opslaan van elektrische energie, negatieve elektrode voor deze inrichting en werkwijze voor het vervaardigen van deze elektrode.
AU465047B2 (en) Plastic nut device with improved sealing and insulating means
CA985794A (en) Semiconductor device with high voltage breakdown resistance
CH391036A (de) Elektrische Kontakt-Anordnung in einem elektrischen Gerät mit Schaltblöcken
NL152405B (nl) Elektrochemische inrichting voor de opslag van elektrische energie.
CH555610A (de) Elektrische hochspannungseinrichtung mit einer metallkapselung und einem ueberspannungsableiter.
NL153723B (nl) Veldeffecttransistor voorzien van een geisoleerde stuurelektrode.
ES196000Y (es) Un dispositivo de elemento de circuito electrico.
CH555609A (de) Elektrische hochspannungseinrichtung mit einer metallkapselung und einem ueberspannungsableiter.
IT943181B (it) Film elettricamente conduttore
NL160410C (nl) Inrichting voor het bepalen van een voor het verbruik van elektrische energie verschuldigd bedrag, in afhankelijkheid van het vermogen, dat een voorafbepaalde grenswaarde te boven gaat.
AT303420B (de) Elektrische Speicheranordnung mit einem Feldeffekttransistor
SU464837A1 (ru) Устройство допускового контрол
ZA717332B (en) An insufficient storage battery voltage signalling device
AU1306070A (en) Device for generating an electron current
CH517338A (de) Nullspannungs-Rückstellgerät an einem Stellantrieb
CH429913A (de) Einrichtung zur Speisung eines elektrischen Verbrauchers über einen Transistor-Wechselrichter mit nur einem Transistor
CH447314A (de) Doppeltwirkende Druckmittelantriebsvorrichtung an einem elektrischen Schalter
IT1013547B (it) Circuito elettrico con memoria perfezionato
ZA726603B (en) An electronic storage device for adjustable d.c.voltage
AU1363570A (en) Improved electrode for an electro-chemical device
CH471471A (de) Elektrische Einrichtung mit Feldeffekttransistor
CA781017A (en) Device for providing electric connection for an electrode in contact with a corrosive fluid

Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: MATSUSHITA