NL7102378A - - Google Patents
Info
- Publication number
- NL7102378A NL7102378A NL7102378A NL7102378A NL7102378A NL 7102378 A NL7102378 A NL 7102378A NL 7102378 A NL7102378 A NL 7102378A NL 7102378 A NL7102378 A NL 7102378A NL 7102378 A NL7102378 A NL 7102378A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P54/00—Cutting or separating of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
- H10P32/1404—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/028—Dicing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1360570A | 1970-02-24 | 1970-02-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7102378A true NL7102378A (https=) | 1971-08-26 |
Family
ID=21760804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7102378A NL7102378A (https=) | 1970-02-24 | 1971-02-23 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3664894A (https=) |
| JP (1) | JPS5128388B1 (https=) |
| BE (1) | BE763330A (https=) |
| DE (1) | DE2107671A1 (https=) |
| FR (1) | FR2080712B1 (https=) |
| GB (1) | GB1287247A (https=) |
| NL (1) | NL7102378A (https=) |
| SE (1) | SE372658B (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3885243A (en) * | 1971-06-25 | 1975-05-20 | Bbc Brown Boveri & Cie | Semiconductor device |
| US4046605A (en) * | 1974-01-14 | 1977-09-06 | National Semiconductor Corporation | Method of electrically isolating individual semiconductor circuits in a wafer |
| GB1536545A (en) * | 1975-03-26 | 1978-12-20 | Mullard Ltd | Semiconductor device manufacture |
| JPS5244173A (en) * | 1975-10-06 | 1977-04-06 | Hitachi Ltd | Method of flat etching of silicon substrate |
| US4040877A (en) * | 1976-08-24 | 1977-08-09 | Westinghouse Electric Corporation | Method of making a transistor device |
| US6750091B1 (en) * | 1996-03-01 | 2004-06-15 | Micron Technology | Diode formation method |
| CN105453250A (zh) * | 2013-08-08 | 2016-03-30 | 夏普株式会社 | 半导体元件衬底及其制造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1054331A (https=) * | 1963-05-16 | |||
| DE1229650B (de) * | 1963-09-30 | 1966-12-01 | Siemens Ag | Verfahren zum Herstellen eines Halbleiter-bauelementes mit pn-UEbergang nach der Planar-Diffusionstechnik |
| US3365794A (en) * | 1964-05-15 | 1968-01-30 | Transitron Electronic Corp | Semiconducting device |
| US3394037A (en) * | 1965-05-28 | 1968-07-23 | Motorola Inc | Method of making a semiconductor device by masking and diffusion |
| US3458781A (en) * | 1966-07-18 | 1969-07-29 | Unitrode Corp | High-voltage planar semiconductor devices |
| US3440114A (en) * | 1966-10-31 | 1969-04-22 | Texas Instruments Inc | Selective gold doping for high resistivity regions in silicon |
| GB1156777A (en) * | 1967-06-28 | 1969-07-02 | Westinghouse Brake & Signal | Manufacture of Semiconductor Elements. |
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1970
- 1970-02-24 US US13605A patent/US3664894A/en not_active Expired - Lifetime
- 1970-12-23 JP JP45118513A patent/JPS5128388B1/ja active Pending
-
1971
- 1971-02-08 FR FR7104101A patent/FR2080712B1/fr not_active Expired
- 1971-02-17 DE DE19712107671 patent/DE2107671A1/de active Pending
- 1971-02-23 SE SE7102288A patent/SE372658B/xx unknown
- 1971-02-23 BE BE763330A patent/BE763330A/xx unknown
- 1971-02-23 NL NL7102378A patent/NL7102378A/xx unknown
- 1971-04-19 GB GB22088/71A patent/GB1287247A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1287247A (en) | 1972-08-31 |
| US3664894A (en) | 1972-05-23 |
| DE2107671A1 (de) | 1971-09-09 |
| BE763330A (fr) | 1971-07-16 |
| FR2080712A1 (https=) | 1971-11-19 |
| SE372658B (https=) | 1974-12-23 |
| JPS5128388B1 (https=) | 1976-08-18 |
| FR2080712B1 (https=) | 1977-01-21 |