NL7102176A - - Google Patents

Info

Publication number
NL7102176A
NL7102176A NL7102176A NL7102176A NL7102176A NL 7102176 A NL7102176 A NL 7102176A NL 7102176 A NL7102176 A NL 7102176A NL 7102176 A NL7102176 A NL 7102176A NL 7102176 A NL7102176 A NL 7102176A
Authority
NL
Netherlands
Application number
NL7102176A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7102176A publication Critical patent/NL7102176A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
NL7102176A 1970-02-19 1971-02-18 NL7102176A (cg-RX-API-DMAC7.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2007752A DE2007752B2 (de) 1970-02-19 1970-02-19 Verfahren zum Herstellen von dotiertem Halbleitermaterial

Publications (1)

Publication Number Publication Date
NL7102176A true NL7102176A (cg-RX-API-DMAC7.html) 1971-08-23

Family

ID=5762769

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7102176A NL7102176A (cg-RX-API-DMAC7.html) 1970-02-19 1971-02-18

Country Status (8)

Country Link
JP (1) JPS5338597B1 (cg-RX-API-DMAC7.html)
AT (1) AT338335B (cg-RX-API-DMAC7.html)
CH (1) CH519249A (cg-RX-API-DMAC7.html)
DE (1) DE2007752B2 (cg-RX-API-DMAC7.html)
FR (1) FR2080610B1 (cg-RX-API-DMAC7.html)
GB (1) GB1289432A (cg-RX-API-DMAC7.html)
NL (1) NL7102176A (cg-RX-API-DMAC7.html)
SE (1) SE366227B (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2262021C2 (de) * 1972-12-19 1982-12-30 Degussa Ag, 6000 Frankfurt Verfahren zur Dotierung von Halbleitersilicium
EP0104412B1 (en) * 1982-09-23 1988-01-07 Allied Corporation Polymeric boron-nitrogen dopant
JPH01135017A (ja) * 1987-11-20 1989-05-26 Fujitsu Ltd 半導体装置の製造方法
DE4013929C2 (de) * 1989-05-02 1995-12-07 Toshiba Kawasaki Kk Verfahren zum Einbringen von Störstoffen in eine Halbleitermaterial-Schicht beim Herstellen eines Halbleiterbauelements und Anwendung des Verfahrens

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3084079A (en) * 1960-10-13 1963-04-02 Pacific Semiconductors Inc Manufacture of semiconductor devices
US3355291A (en) * 1963-10-08 1967-11-28 Texas Instruments Inc Application of glass to semiconductor devices
US3514348A (en) * 1967-05-10 1970-05-26 Ncr Co Method for making semiconductor devices
JPS4822536B1 (cg-RX-API-DMAC7.html) * 1969-03-20 1973-07-06

Also Published As

Publication number Publication date
GB1289432A (cg-RX-API-DMAC7.html) 1972-09-20
JPS5338597B1 (cg-RX-API-DMAC7.html) 1978-10-16
AT338335B (de) 1977-08-25
DE2007752C3 (cg-RX-API-DMAC7.html) 1979-04-05
DE2007752A1 (de) 1971-08-26
DE2007752B2 (de) 1978-07-27
SE366227B (cg-RX-API-DMAC7.html) 1974-04-22
FR2080610A1 (cg-RX-API-DMAC7.html) 1971-11-19
ATA82571A (de) 1976-12-15
FR2080610B1 (cg-RX-API-DMAC7.html) 1976-04-16
CH519249A (de) 1972-02-15

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