NL7016722A - - Google Patents

Info

Publication number
NL7016722A
NL7016722A NL7016722A NL7016722A NL7016722A NL 7016722 A NL7016722 A NL 7016722A NL 7016722 A NL7016722 A NL 7016722A NL 7016722 A NL7016722 A NL 7016722A NL 7016722 A NL7016722 A NL 7016722A
Authority
NL
Netherlands
Application number
NL7016722A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7016722A publication Critical patent/NL7016722A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/918—Single-crystal waveguide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL7016722A 1969-11-21 1970-11-14 NL7016722A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR6940146A FR2067923A6 (ja) 1969-11-21 1969-11-21

Publications (1)

Publication Number Publication Date
NL7016722A true NL7016722A (ja) 1971-05-25

Family

ID=9043430

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7016722A NL7016722A (ja) 1969-11-21 1970-11-14

Country Status (9)

Country Link
US (1) US3663180A (ja)
JP (1) JPS4828278B1 (ja)
BE (1) BE759175A (ja)
CA (1) CA935361A (ja)
CH (1) CH556192A (ja)
DE (1) DE2054039C3 (ja)
FR (1) FR2067923A6 (ja)
GB (1) GB1303309A (ja)
NL (1) NL7016722A (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3960511A (en) * 1971-07-15 1976-06-01 Preussag Aktiengesellschaft Zone melting process
US3844724A (en) * 1971-12-27 1974-10-29 Du Pont Zone-melting apparatus
US3933572A (en) * 1973-12-11 1976-01-20 The United States Of America As Represented By The Secretary Of The Air Force Method for growing crystals
JPS5567596A (en) * 1978-11-10 1980-05-21 Hitachi Ltd Single crystal growing method
FR2552292B1 (fr) * 1983-09-20 1985-10-25 Commissariat Energie Atomique Dispositif de mise en tension d'une plaque mince
JPS61215295A (ja) * 1985-03-18 1986-09-25 Shinichi Hirano 炭酸カルシユウム単結晶の製造方法
JPS62113798A (ja) * 1985-11-12 1987-05-25 Shinichi Hirano 炭酸カルシユウム単結晶の製造方法
EP0450494B1 (en) * 1990-03-30 1996-06-19 Sumitomo Sitix Corporation Manufacturing method for single-crystal silicon
US5217565A (en) * 1991-11-13 1993-06-08 Wisconsin Alumni Research Foundation Contactless heater floating zone refining and crystal growth
CN1109777C (zh) * 1999-11-24 2003-05-28 中国科学院物理研究所 异型加热片区熔生长晶体的方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2747971A (en) * 1953-07-20 1956-05-29 Westinghouse Electric Corp Preparation of pure crystalline silicon
US2990261A (en) * 1958-12-11 1961-06-27 Bell Telephone Labor Inc Processing of boron compact
NL275885A (ja) * 1961-03-14
US3345141A (en) * 1963-11-07 1967-10-03 Perkin Elmer Corp Growth of calcite crystals from a molten flux by slow cooling
US3396059A (en) * 1964-09-14 1968-08-06 Nat Res Corp Process of growing silicon carbide p-nu junction electroluminescing diodes using a modified travelling solvent method
US3505032A (en) * 1965-11-09 1970-04-07 Westinghouse Electric Corp Heater immersed zone refined melt
US3484302A (en) * 1966-01-18 1969-12-16 Fujitsu Ltd Method of growing semiconductor crystals

Also Published As

Publication number Publication date
GB1303309A (ja) 1973-01-17
DE2054039B2 (de) 1977-12-08
DE2054039A1 (de) 1971-05-27
FR2067923A6 (ja) 1971-08-20
CH556192A (de) 1974-11-29
JPS4828278B1 (ja) 1973-08-30
US3663180A (en) 1972-05-16
DE2054039C3 (de) 1978-08-10
CA935361A (en) 1973-10-16
BE759175A (nl) 1971-05-19

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