FR2067923A6 - - Google Patents

Info

Publication number
FR2067923A6
FR2067923A6 FR6940146A FR6940146A FR2067923A6 FR 2067923 A6 FR2067923 A6 FR 2067923A6 FR 6940146 A FR6940146 A FR 6940146A FR 6940146 A FR6940146 A FR 6940146A FR 2067923 A6 FR2067923 A6 FR 2067923A6
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR6940146A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoires dElectronique Philips SAS
Original Assignee
Laboratoires dElectronique et de Physique Appliquee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE759175D priority Critical patent/BE759175A/nl
Application filed by Laboratoires dElectronique et de Physique Appliquee filed Critical Laboratoires dElectronique et de Physique Appliquee
Priority to FR6940146A priority patent/FR2067923A6/fr
Priority to US82870A priority patent/US3663180A/en
Priority to DE2054039A priority patent/DE2054039C3/de
Priority to NL7016722A priority patent/NL7016722A/xx
Priority to GB5481870A priority patent/GB1303309A/en
Priority to CH1709470A priority patent/CH556192A/xx
Priority to JP45101180A priority patent/JPS4828278B1/ja
Priority to CA098674A priority patent/CA935361A/en
Application granted granted Critical
Publication of FR2067923A6 publication Critical patent/FR2067923A6/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/918—Single-crystal waveguide
FR6940146A 1969-11-21 1969-11-21 Expired FR2067923A6 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
BE759175D BE759175A (nl) 1969-11-21 Werkwijze voor de bereiding van calcieteenkristallen
FR6940146A FR2067923A6 (fr) 1969-11-21 1969-11-21
US82870A US3663180A (en) 1969-11-21 1970-10-22 Method of producing calcium carbonate single crystals
DE2054039A DE2054039C3 (de) 1969-11-21 1970-11-03 Verfahren zur Herstellung eines Calcit-Einkristalls
NL7016722A NL7016722A (fr) 1969-11-21 1970-11-14
GB5481870A GB1303309A (fr) 1969-11-21 1970-11-18
CH1709470A CH556192A (de) 1969-11-21 1970-11-18 Verfahren zur herstellung eines calcit-einkristalls.
JP45101180A JPS4828278B1 (fr) 1969-11-21 1970-11-18
CA098674A CA935361A (en) 1969-11-21 1970-11-20 Method of producing calcite single crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR6940146A FR2067923A6 (fr) 1969-11-21 1969-11-21

Publications (1)

Publication Number Publication Date
FR2067923A6 true FR2067923A6 (fr) 1971-08-20

Family

ID=9043430

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6940146A Expired FR2067923A6 (fr) 1969-11-21 1969-11-21

Country Status (9)

Country Link
US (1) US3663180A (fr)
JP (1) JPS4828278B1 (fr)
BE (1) BE759175A (fr)
CA (1) CA935361A (fr)
CH (1) CH556192A (fr)
DE (1) DE2054039C3 (fr)
FR (1) FR2067923A6 (fr)
GB (1) GB1303309A (fr)
NL (1) NL7016722A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2552292A1 (fr) * 1983-09-20 1985-03-22 Commissariat Energie Atomique Dispositif de mise en tension d'une plaque mince

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3960511A (en) * 1971-07-15 1976-06-01 Preussag Aktiengesellschaft Zone melting process
US3844724A (en) * 1971-12-27 1974-10-29 Du Pont Zone-melting apparatus
US3933572A (en) * 1973-12-11 1976-01-20 The United States Of America As Represented By The Secretary Of The Air Force Method for growing crystals
JPS5567596A (en) * 1978-11-10 1980-05-21 Hitachi Ltd Single crystal growing method
JPS61215295A (ja) * 1985-03-18 1986-09-25 Shinichi Hirano 炭酸カルシユウム単結晶の製造方法
JPS62113798A (ja) * 1985-11-12 1987-05-25 Shinichi Hirano 炭酸カルシユウム単結晶の製造方法
EP0450494B1 (fr) * 1990-03-30 1996-06-19 Sumitomo Sitix Corporation Procédé de fabrication de monocristaux de silicium
US5217565A (en) * 1991-11-13 1993-06-08 Wisconsin Alumni Research Foundation Contactless heater floating zone refining and crystal growth
CN1109777C (zh) * 1999-11-24 2003-05-28 中国科学院物理研究所 异型加热片区熔生长晶体的方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2747971A (en) * 1953-07-20 1956-05-29 Westinghouse Electric Corp Preparation of pure crystalline silicon
US2990261A (en) * 1958-12-11 1961-06-27 Bell Telephone Labor Inc Processing of boron compact
FR1317646A (fr) * 1961-03-14 1963-05-08
US3345141A (en) * 1963-11-07 1967-10-03 Perkin Elmer Corp Growth of calcite crystals from a molten flux by slow cooling
US3396059A (en) * 1964-09-14 1968-08-06 Nat Res Corp Process of growing silicon carbide p-nu junction electroluminescing diodes using a modified travelling solvent method
US3505032A (en) * 1965-11-09 1970-04-07 Westinghouse Electric Corp Heater immersed zone refined melt
US3484302A (en) * 1966-01-18 1969-12-16 Fujitsu Ltd Method of growing semiconductor crystals

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2552292A1 (fr) * 1983-09-20 1985-03-22 Commissariat Energie Atomique Dispositif de mise en tension d'une plaque mince
EP0140739A1 (fr) * 1983-09-20 1985-05-08 Commissariat A L'energie Atomique Dispositif de mise en tension d'une plaque mince
US4608234A (en) * 1983-09-20 1986-08-26 Commissariat A L'energie Atomique Device for tensioning a thin plate

Also Published As

Publication number Publication date
DE2054039C3 (de) 1978-08-10
DE2054039A1 (de) 1971-05-27
JPS4828278B1 (fr) 1973-08-30
CA935361A (en) 1973-10-16
US3663180A (en) 1972-05-16
CH556192A (de) 1974-11-29
NL7016722A (fr) 1971-05-25
BE759175A (nl) 1971-05-19
GB1303309A (fr) 1973-01-17
DE2054039B2 (de) 1977-12-08

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